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IXGA12N120A3

IXYS Corporation

IXGA12N120A3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 22 A; Transistor Application: POWER CONTROL;

Median Price

$5.670

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 85 parts In-Stock

1+ parts

$5.570

100+ parts

$2.664

1k+ parts

$2.115

10k+ parts

-

85

$5.570

$2.664

$2.115

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Mouser Electronics

USA . 372 parts In-Stock

1+ parts

$5.770

100+ parts

$2.780

1k+ parts

$2.200

10k+ parts

-

372

$5.770

$2.780

$2.200

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

-

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600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 757 parts In-Stock

1+ parts

$5.770

100+ parts

$3.840

1k+ parts

$2.980

10k+ parts

-

757

$5.770

$3.840

$2.980

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Ampacity Inc.

Singapore . 335 parts In-Stock

1+ parts

$8.380

100+ parts

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335

$8.380

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Microchip USA

USA . 318 parts In-Stock

1+ parts

$27.773

100+ parts

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318

$27.773

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Continental Prestige Electronics

USA . 4,202 parts In-Stock

1+ parts

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4,202

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Argo Parts USA

USA . 1,674 parts In-Stock

1+ parts

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1,674

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGA12N120A3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1545 ns

Nominal Turn On Time (ton):

202 ns

Maximum VCEsat:

3 V

Trade Compliance

IXGA12N120A3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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