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IXGA12N120A3

Littelfuse

IXGA12N120A3 by Littelfuse

IXGA12N120A3 by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 22A IC, and 100W power dissipation. Ideal for power control applications, it has a single configuration in a small outline package with gull wing terminals.

Median Price

$5.670

Lifecycle Status

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3

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1k+

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DigiKey

USA . 85 parts In-Stock

1+ parts

$5.570

100+ parts

$2.664

1k+ parts

$2.115

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85

$5.570

$2.664

$2.115

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Mouser Electronics

USA . 372 parts In-Stock

1+ parts

$5.770

100+ parts

$2.780

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$2.200

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372

$5.770

$2.780

$2.200

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Component Stockers USA

USA . 757 parts In-Stock

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$5.770

100+ parts

$3.840

1k+ parts

$2.980

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757

$5.770

$3.840

$2.980

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Ampacity Inc.

Singapore . 335 parts In-Stock

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$8.380

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335

$8.380

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Microchip USA

USA . 318 parts In-Stock

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$27.773

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318

$27.773

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,202 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,674 parts In-Stock

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1,674

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Overview

Unlock the power of efficient and reliable power control with the Littelfuse IXGA12N120A3 Insulated Gate Bipolar Transistor (IGBT). Manufactured by industry leader Littelfuse, this N-CHANNEL transistor boasts a single configuration in a compact, surface mount package. Ideal for a variety of applications, this IGBT offers a maximum collector-emitter voltage of 1200V and a maximum collector current of 22A. With a low VCEsat of 3V and a fast turn-on/off time, this transistor provides exceptional performance and value for your power control needs. Upgrade to the Littelfuse IXGA12N120A3 for superior quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the internal components, ensuring reliable performance.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and high-speed switching capabilities.

Configuration: SINGLE

Simplifies the circuit design and offers ease of use in applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Enables easy and efficient installation on the circuit board, saving space and facilitating mass production.

Maximum VCEsat: 3 V

Low VCEsat value indicates low power loss during operation, increasing efficiency.

Package Shape: RECTANGULAR

Provides a compact form factor for space-saving integration into electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering onto the PCB, ensuring a reliable connection.

Nominal Turn Off Time (toff): 1545 ns

Fast turn-off time enhances the switching performance of the transistor, ideal for high-frequency applications.

No. of Terminals: 2

Simplifies the connection process and reduces complexity in the circuit design.

Maximum Power Dissipation (Abs): 100 W

High power dissipation capability allows for handling of high power loads without overheating.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space and allows for high-density mounting on the PCB.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 1200 V

High maximum voltage rating enables the transistor to handle high voltage levels safely.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the transistor.

Maximum Gate-Emitter Voltage: 20 V

Safe voltage handling capability protects the transistor from damage due to overvoltage conditions.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold environments without compromising performance.

Maximum Collector Current (IC): 22 A

High collector current rating enables the transistor to handle large currents in power control applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

Low gate-emitter threshold voltage ensures fast and efficient switching operation.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good solderability and ensures a reliable electrical connection.

Terminal Position: SINGLE

Simplified terminal configuration makes installation easier and reduces complexity in the circuit design.

Case Connection: COLLECTOR

Collector case connection simplifies the circuit layout and enhances thermal management.

Maximum Time At Peak Reflow Temperature (s): 10

Sufficient time at peak reflow temperature ensures proper soldering and reliability of the connection.

Peak Reflow Temperature °C: 260

High peak reflow temperature enables proper soldering and ensures a secure electrical connection.

Nominal Turn On Time (ton): 202 ns

Fast turn-on time improves the switching speed and efficiency of the transistor.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGA12N120A3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1545 ns

Nominal Turn On Time (ton):

202 ns

Maximum VCEsat:

3 V

Trade Compliance

IXGA12N120A3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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