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IXGA30N120B3

Littelfuse

IXGA30N120B3 by Littelfuse

IXGA30N120B3 by Littelfuse is an N-CHANNEL IGBT for POWER CONTROL applications. With a VCEsat of 3.5V, it has a max collector-emitter voltage of 1200V and can handle a collector current of 60A. Its small outline package style and surface mount capability make it suitable for various power control systems.

Median Price

$9.562

Lifecycle Status

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DigiKey

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$11.260

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$5.845

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$5.373

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$11.260

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$5.373

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Mouser Electronics

USA . 983 parts In-Stock

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$11.260

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$6.230

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983

$11.260

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$6.230

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Chip1Stop

Japan . 550 parts In-Stock

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$6.680

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$6.520

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Verical

USA . 294 parts In-Stock

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$9.562

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Arrow

USA . 250 parts In-Stock

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$6.979

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$6.169

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$6.044

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$6.044

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Nova Conductors

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$6.030

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TME

Poland . 294 parts In-Stock

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$10.600

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$7.570

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Vyrian

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ACDS - Activité Composants Distribution Service

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Netroflash

USA . 100 parts In-Stock

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$5.909

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Continental Prestige Electronics

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$4.950

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$4.120

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Microchip USA

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Overview

Discover the power and reliability of Littelfuse's IXGA30N120B3 Insulated Gate Bipolar Transistor (IGBT). Perfect for power control applications, this N-channel transistor offers a single configuration with a maximum VCEsat of 3.5V and a maximum collector-emitter voltage of 1200V. With a small outline package style and gull wing terminals, this IGBT is designed for ease of use and high performance. Trust Littelfuse's reputation for quality and innovation, and unlock the full potential of your power systems with the IXGA30N120B3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel types.

Configuration: SINGLE

Simplified design and implementation in power control circuits.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in such scenarios.

Maximum VCEsat: 3.5 V

Low saturation voltage helps in reducing power losses and improving efficiency of the device.

Maximum Collector-Emitter Voltage: 1200 V

Allows for high voltage handling capabilities, suitable for power control applications.

Maximum Power Dissipation (Abs): 300 W

High power dissipation capability ensures the transistor can handle heavy loads and high power requirements.

Surface Mount: YES

Ease of assembly and compact size for space-saving benefits in circuit design.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in different environments and applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGA30N120B3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Fall Time (tf):

380 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

580 ns

Nominal Turn Off Time (toff):

331 ns

Nominal Turn On Time (ton):

53 ns

Maximum VCEsat:

3.5 V

Trade Compliance

IXGA30N120B3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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