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IXGA48N60A3

Littelfuse

IXGA48N60A3 by Littelfuse

IXGA48N60A3 by Littelfuse is an N-CHANNEL IGBT transistor with VCEsat of 1.35V, IC of 120A, and toff of 925ns. Ideal for power control applications, it operates at temperatures ranging from -55°C to 150°C and has a max VCE of 600V.

Median Price

$5.970

Lifecycle Status

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Mouser Electronics

USA . 140 parts In-Stock

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$5.970

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$3.270

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$2.430

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$5.970

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DigiKey

USA . 17 parts In-Stock

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$6.190

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$2.997

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$2.436

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$6.190

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Verical

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$4.506

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Ozdisan Elektronik

Türkiye . 65 parts In-Stock

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$4.764

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Chip Stock

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NAC Semi

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Nova Conductors

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Advanced Electronics

New Zealand . 36 parts In-Stock

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$1.757

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$1.599

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$1.441

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Ampacity Inc.

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$4.330

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Component Stockers USA

USA . 1,296 parts In-Stock

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$4.810

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$3.440

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Andel Nordic

Denmark . 284 parts In-Stock

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$7.207

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$6.919

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Microchip USA

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Glotronic Ltd.

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Perfect Parts

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Overview

Unlock the power of reliable and efficient performance with the Littelfuse IXGA48N60A3 Insulated Gate Bipolar Transistor. Manufactured by a trusted industry leader, this N-CHANNEL transistor is designed for power control applications with a maximum collector-emitter voltage of 600V and a peak power dissipation of 300W. Its fast turn-on and turn-off times ensure optimal performance, while its durable construction guarantees long-term reliability. Whether you're in need of high-quality components for your industrial or automotive projects, the IXGA48N60A3 offers unmatched value and benefits to meet your needs. Elevate your designs with Littelfuse today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs generally have lower on-state voltage drops and higher efficiency compared to P-Channel IGBTs, making them ideal for power control applications.

Configuration: SINGLE

Simplifies the design and implementation of circuits using this IGBT, reducing complexity and potential points of failure.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency in controlling high power loads.

Maximum VCEsat: 1.35 V

Low VCEsat results in lower power losses and higher efficiency in power switching applications.

Package Shape: RECTANGULAR

Allows for efficient and space-saving PCB layout, enabling compact designs in electronic circuits.

Nominal Turn Off Time (toff): 925 ns

Fast turn-off time ensures quick switching and minimizes power loss during switching transitions.

Maximum Power Dissipation (Abs): 300 W

High power dissipation capability allows the IGBT to handle high power loads without overheating or damage.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 600 V

Capable of handling high voltages, making it suitable for a wide range of power control applications.

Maximum Gate-Emitter Voltage: 20 V

Provides sufficient margin for gate control voltage, ensuring reliable and stable operation of the IGBT.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments without performance degradation or failure.

Maximum Collector Current (IC): 120 A

Capable of handling high current loads, making it suitable for power control applications with high power requirements.

Maximum Gate-Emitter Threshold Voltage: 5.5 V

Provides precise gate control for switching operations, ensuring accurate and efficient power control.

Terminal Finish: Matte Tin (Sn)

Provides good solderability for easy and reliable PCB assembly.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during PCB assembly process without damage or degradation.

Nominal Turn On Time (ton): 54 ns

Fast turn-on time ensures quick response in power switching applications, improving overall efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGA48N60A3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

925 ns

Nominal Turn On Time (ton):

54 ns

Maximum VCEsat:

1.35 V

Trade Compliance

IXGA48N60A3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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