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IXYT85N120A4HV

Littelfuse

IXYT85N120A4HV by Littelfuse

Littelfuse IXYT85N120A4HV is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 1.8V, it offers a high collector-emitter voltage of 1200V and can handle up to 300A collector current. Its small outline package and gull wing terminals make it suitable for surface mount designs in power electronics.

Median Price

$24.270

Lifecycle Status

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4

In-Stock Inventory

1k+

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Mouser Electronics

USA . 475 parts In-Stock

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DigiKey

USA . 448 parts In-Stock

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$24.270

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$15.513

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$14.455

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Vyrian

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Nova Conductors

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Ampacity Inc.

Singapore . 372 parts In-Stock

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$14.310

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Microchip USA

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Argo Parts USA

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Aranea Global

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Continental Prestige Electronics

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Overview

Unleash the power of innovation with the IXYT85N120A4HV by Littelfuse! As a leading manufacturer in the industry, Littelfuse delivers top-notch quality and reliability. This Insulated Gate Bipolar Transistor (IGBT) is a game-changer in power control applications, offering unparalleled performance and efficiency. With a maximum collector-emitter voltage of 1200V and maximum operating temperature of 175°C, this transistor can handle even the most demanding tasks with ease. Trust Littelfuse to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Maximum VCEsat: 1.8 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction, resulting in high efficiency and reduced power losses.

Maximum Power Dissipation (Abs): 1150 W

With a high maximum power dissipation, this IGBT can handle heavy loads and high power applications without overheating or failing.

Maximum Collector-Emitter Voltage: 1200 V

The high VCE voltage rating allows for the handling of high voltages in power control applications, ensuring reliable and safe operation.

Maximum Collector Current (IC): 300 A

The high collector current rating enables the IGBT to handle large current flows, making it suitable for high-power applications where large currents are required.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYT85N120A4HV attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-268AA

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

990 ns

Nominal Turn On Time (ton):

73 ns

Maximum VCEsat:

1.8 V

Trade Compliance

IXYT85N120A4HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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