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IXYT80N90C3

Littelfuse

IXYT80N90C3 by Littelfuse

IXYT80N90C3 by Littelfuse is an N-CHANNEL IGBT for power control applications. With a max VCEsat of 2.7V, it has a collector-emitter voltage of 900V and can handle a max collector current of 165A. This surface-mount transistor operates b/w -55 to 175°C, making it suitable for high-power applications requiring fast switching times.

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Component Stockers USA

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500

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Overview

Unleash the power of the IXYT80N90C3 from Littelfuse, a leading manufacturer in the industry. This Insulated Gate Bipolar Transistor (IGBT) offers unparalleled performance and reliability for power control applications. With a maximum collector-emitter voltage of 900V and a maximum collector current of 165A, this N-channel transistor is ideal for high-power applications. The IXYT80N90C3's fast turn-on and turn-off times ensure efficient operation, while its rugged design guarantees long-lasting durability. Trust Littelfuse to deliver quality products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the electronic components inside.

Polarity or Channel Type: N-CHANNEL

Efficiently controls the flow of current in power applications.

Maximum VCEsat: 2.7 V

Low saturation voltage allows for efficient power control and reduced energy loss.

Nominal Turn Off Time (toff): 201 ns

Fast turn-off time ensures quick response in power control applications.

Maximum Power Dissipation (Abs): 830 W

High power dissipation capability makes it suitable for demanding power control tasks.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, ensuring stable operation in various environments.

Maximum Collector-Emitter Voltage: 900 V

Suitable for high voltage applications where precise power control is required.

Maximum Collector Current (IC): 165 A

High current carrying capacity enables power control in heavy-duty applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYT80N90C3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

900 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-268AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

201 ns

Nominal Turn On Time (ton):

134 ns

Maximum VCEsat:

2.7 V

Trade Compliance

IXYT80N90C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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