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AIGW40N65H5XKSA1

Infineon Technologies

AIGW40N65H5XKSA1 by Infineon Technologies

AIGW40N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT for POWER CONTROL applications. It has a max VCEsat of 2.1V, collector-emitter voltage of 650V, and collector current of 74A. With a turn-off time of 203ns and power dissipation of 250W, it operates in temperatures ranging from -40 to 175°C.

Median Price

$6.685

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 105 parts In-Stock

1+ parts

$6.210

100+ parts

$3.910

1k+ parts

$3.510

10k+ parts

-

105

$6.210

$3.910

$3.510

-

Newark

USA . 65 parts In-Stock

1+ parts

$7.160

100+ parts

$3.940

1k+ parts

$3.470

10k+ parts

-

65

$7.160

$3.940

$3.470

-

Mouser Electronics

USA . 143 parts In-Stock

1+ parts

$9.030

100+ parts

$2.930

1k+ parts

$2.490

10k+ parts

-

143

$9.030

$2.930

$2.490

-

Element14

Singapore . 105 parts In-Stock

1+ parts

$10.170

100+ parts

$6.280

1k+ parts

$5.290

10k+ parts

-

105

$10.170

$6.280

$5.290

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Rochester

USA . 252 parts In-Stock

1+ parts

-

100+ parts

$2.150

1k+ parts

$1.920

10k+ parts

$1.810

252

-

$2.150

$1.920

$1.810

Verical

USA . 222 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.400

10k+ parts

$2.263

222

-

-

$2.400

$2.263

RS (Exports)

UK . 218 parts In-Stock

1+ parts

-

100+ parts

$4.815

1k+ parts

-

10k+ parts

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218

-

$4.815

-

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DigiKey

USA . 30 parts In-Stock

1+ parts

-

100+ parts

$10.000

1k+ parts

-

10k+ parts

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30

-

$10.000

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 180 parts In-Stock

1+ parts

$2.442

100+ parts

-

1k+ parts

-

10k+ parts

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180

$2.442

-

-

-

TME

Poland . 161 parts In-Stock

1+ parts

$6.530

100+ parts

$4.810

1k+ parts

-

10k+ parts

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161

$6.530

$4.810

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Vyrian

USA . 6,181 parts In-Stock

1+ parts

-

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6,181

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 12,494 parts In-Stock

1+ parts

$0.822

100+ parts

$0.789

1k+ parts

$0.756

10k+ parts

-

12,494

$0.822

$0.789

$0.756

-

Corphita

USA . 135 parts In-Stock

1+ parts

$2.313

100+ parts

-

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-

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135

$2.313

-

-

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Continental Prestige Electronics

USA . 155 parts In-Stock

1+ parts

$2.330

100+ parts

-

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155

$2.330

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-

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Northwest PG Solutions

USA . 106 parts In-Stock

1+ parts

$2.379

100+ parts

-

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106

$2.379

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 18,818 parts In-Stock

1+ parts

-

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18,818

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-

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Microchip USA

USA . 5,023 parts In-Stock

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5,023

-

-

-

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Robosynatics

Brazil . 950 parts In-Stock

1+ parts

-

100+ parts

$1.043

1k+ parts

$0.966

10k+ parts

$0.966

950

-

$1.043

$0.966

$0.966

Lucentia Tech

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$1.043

1k+ parts

$0.966

10k+ parts

$0.966

950

-

$1.043

$0.966

$0.966

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

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500

-

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Native Components

USA . 412 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$2.098

10k+ parts

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412

-

-

$2.098

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iodParts Technologies Inc.

India . 238 parts In-Stock

1+ parts

-

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238

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Overview

Unlock the power of high-performance with the AIGW40N65H5XKSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies guarantees top-notch quality and reliability. This Insulated Gate Bipolar Transistor (IGBT) is perfect for power control applications, offering a maximum operating temperature of 175°C and a collector-emitter voltage of 650V. With a nominal turn-off time of just 203ns, this single-channel transistor provides efficient power dissipation of 250W. Trust Infineon Technologies to deliver cutting-edge technology that exceeds expectations and brings unbeatable value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides strong and durable housing for the transistor, ensuring long-term reliability and protection against external elements.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel IGBTs, making them ideal for power control applications.

Maximum VCEsat: 2.1 V

Low VCEsat minimizes power dissipation and improves efficiency in power control applications.

Nominal Turn Off Time (toff): 203 ns

Fast turn-off time allows for quick switching and precise control in power circuits.

Maximum Power Dissipation (Abs): 250 W

High power dissipation capability enables handling of large power loads without overheating.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures stability and performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 650 V

High voltage rating allows for safe operation in high-power applications.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating provides robustness and reliability in gate control.

Minimum Operating Temperature: -40 °C

Can operate in extreme low-temperature conditions, making it versatile for different applications.

Maximum Collector Current (IC): 74 A

High collector current rating enables handling of heavy current loads in power circuits.

Reference Standard: AEC-Q101

Compliance with automotive quality standard ensures reliability and performance in automotive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) AIGW40N65H5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

4.8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

203 ns

Nominal Turn On Time (ton):

31 ns

Maximum VCEsat:

2.1 V

Trade Compliance

AIGW40N65H5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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