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SGW20N60HSFKSA1

Infineon Technologies

SGW20N60HSFKSA1 by Infineon Technologies

Infineon's SGW20N60HSFKSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 36A max collector current, and 30ns turn on time. Ideal for motor control applications due to its single configuration and through-hole terminals. Operating at up to 150°C, it offers a fast switching speed of 235ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,675 parts In-Stock

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Digiode

USA . 772 parts In-Stock

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Nova Conductors

Japan . 54 parts In-Stock

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54

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,721 parts In-Stock

1+ parts

$0.642

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3,721

$0.642

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Modulus Dynamics

Lithuania . 7,751 parts In-Stock

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$1.205

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$1.157

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$1.109

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7,751

$1.205

$1.157

$1.109

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Corohmni

South Africa . 89 parts In-Stock

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$1.481

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89

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AZTECH Wire

Italy . 372 parts In-Stock

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$9.352

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372

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Ampacity Inc.

Singapore . 144 parts In-Stock

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$27.050

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144

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Argo Parts USA

USA . 4,440 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Corphita

USA . 454 parts In-Stock

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Continental Prestige Electronics

USA . 287 parts In-Stock

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Overview

Elevate your motor control applications with the SGW20N60HSFKSA1 by Infineon Technologies. Known for its superior quality and reliability, Infineon Technologies has solidified its place as a leading manufacturer in the industry. The Insulated Gate Bipolar Transistor (IGBT) is designed to optimize performance and efficiency, offering customers unparalleled value and benefits. Whether you're looking to enhance your motor control system or streamline your operations, this N-channel IGBT is the perfect solution. Experience the difference with Infineon Technologies and take your applications to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components, making it a durable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL polarity allows for efficient current flow and low ON-resistance, making this IGBT ideal for motor control applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making this IGBT easy to use for various projects.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, this IGBT offers reliable performance and efficient power management.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and efficient use of space in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering, ensuring reliable performance in various environments.

Nominal Turn Off Time (toff): 235 ns

The quick turn-off time of 235 ns allows for fast switching, reducing power losses and improving efficiency in motor control applications.

No. of Terminals: 3

With 3 terminals, this IGBT is easy to integrate into circuits and offers flexibility in connection options.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy installation and secure mounting, making this IGBT suitable for industrial applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this IGBT is suitable for high-temperature environments and demanding applications.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage of 600 V allows for reliable operation in high-power circuits and motor control applications.

Transistor Element Material: SILICON

Silicon is a common transistor material known for its reliability and consistent performance, making this IGBT a durable choice for long-term use.

Maximum Collector Current (IC): 36 A

With a maximum collector current of 36 A, this IGBT can handle high power loads and provide reliable performance in motor control applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and assembly, making this IGBT easy to use in various projects.

Case Connection: COLLECTOR

The collector case connection provides good thermal dissipation and ensures stable performance in high-power applications.

Nominal Turn On Time (ton): 30 ns

The quick turn-on time of 30 ns allows for fast switching and efficient control of the motor, enhancing the performance of this IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGW20N60HSFKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

235 ns

Nominal Turn On Time (ton):

30 ns

Trade Compliance

SGW20N60HSFKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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