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SGW20N60XK

Infineon Technologies

SGW20N60XK by Infineon Technologies

SGW20N60XK by Infineon Technologies is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 40A max. collector current. It has a turn on time of 66ns and turn off time of 313ns, making it ideal for MOTOR CONTROL applications requiring fast switching speeds in a SINGLE configuration with THROUGH-HOLE terminals.

Median Price

$3.532

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

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$3.532

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10

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Vyrian

USA . 1,217 parts In-Stock

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Digiode

USA . 942 parts In-Stock

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942

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Distributors (Availability)

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Corohmni

South Africa . 233 parts In-Stock

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$0.392

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233

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Modulus Dynamics

Lithuania . 18,138 parts In-Stock

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$0.624

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$0.599

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$0.574

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18,138

$0.624

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$0.574

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Ampacity Inc.

Singapore . 705 parts In-Stock

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$1.050

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705

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Aztec Data Supply Inc.

USA . 17,603 parts In-Stock

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$1.947

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Continental Prestige Electronics

USA . 4,370 parts In-Stock

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$3.532

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$3.461

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Argo Parts USA

USA . 3,062 parts In-Stock

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$3.532

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Netroflash

USA . 2,000 parts In-Stock

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$3.532

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AZTECH Wire

Italy . 420 parts In-Stock

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$18.536

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Authorized Procurement Solutions

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Corphita

USA . 404 parts In-Stock

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Overview

Elevate your motor control applications with the SGW20N60XK Insulated Gate Bipolar Transistor from Infineon Technologies. Manufactured with precision and reliability in mind, this N-CHANNEL transistor offers a single configuration for simplified use. With a maximum collector-emitter voltage of 600V and a nominal turn off time of 313ns, this transistor ensures optimal performance and efficiency. Whether you're looking to enhance the speed or power of your motor controls, the SGW20N60XK provides the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and thermal properties, making the IGBT more reliable and efficient in operation.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have lower on-state voltage drop and higher switching speeds, leading to better overall performance in motor control applications.

Configuration: SINGLE

Single configuration simplifies circuit design and improves reliability by reducing potential failure points.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and efficiency in driving motors.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and efficient use of space in compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in circuit boards, ensuring stable operation.

Nominal Turn Off Time (toff): 313 ns

Fast turn-off time allows for precise control and switching of the IGBT, reducing heat dissipation and improving efficiency.

No. of Terminals: 3

Having 3 terminals simplifies the connection and control of the IGBT in motor control applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy and secure mounting options in various equipment and systems.

Maximum Collector-Emitter Voltage: 600 V

High maximum voltage rating allows for the IGBT to be used in a wide range of applications, including high voltage motor control.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and high temperature resistance, enhancing the durability and reliability of the IGBT.

Maximum Collector Current (IC): 40 A

High maximum collector current rating enables the IGBT to handle higher power levels in motor control applications.

Terminal Position: SINGLE

Single terminal position simplifies wiring and connections, reducing the risk of errors and improving overall reliability.

Case Connection: COLLECTOR

Case connection at the collector terminal facilitates efficient heat dissipation, ensuring stable operation even at high currents.

Nominal Turn On Time (ton): 66 ns

Fast turn-on time allows for quick response and accurate switching of the IGBT, essential for precise motor control and efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGW20N60XK attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

313 ns

Nominal Turn On Time (ton):

66 ns

Trade Compliance

SGW20N60XK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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