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IGP20N60H3XKSA1

Infineon Technologies

IGP20N60H3XKSA1 by Infineon Technologies

IGP20N60H3XKSA1 by Infineon is an N-CHANNEL IGBT transistor with a max voltage of 600V and max current of 40A. It has a turn on time of 31ns and turn off time of 241ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 175°C.

Median Price

$2.200

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 500 parts In-Stock

1+ parts

$2.190

100+ parts

$1.130

1k+ parts

-

10k+ parts

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500

$2.190

$1.130

-

-

Element14

Singapore . 612 parts In-Stock

1+ parts

$2.209

100+ parts

$1.515

1k+ parts

$1.015

10k+ parts

$1.000

612

$2.209

$1.515

$1.015

$1.000

DigiKey

USA . 40 parts In-Stock

1+ parts

$2.210

100+ parts

-

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-

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40

$2.210

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-

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Farnell

UK . 612 parts In-Stock

1+ parts

$2.328

100+ parts

$1.247

1k+ parts

$0.999

10k+ parts

-

612

$2.328

$1.247

$0.999

-

Newark

USA . 545 parts In-Stock

1+ parts

$2.510

100+ parts

$1.250

1k+ parts

$0.999

10k+ parts

$0.897

545

$2.510

$1.250

$0.999

$0.897

Rochester

USA . 1,567 parts In-Stock

1+ parts

-

100+ parts

$0.817

1k+ parts

$0.678

10k+ parts

$0.604

1,567

-

$0.817

$0.678

$0.604

Verical

USA . 1,337 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.847

10k+ parts

$0.755

1,337

-

-

$0.847

$0.755

RS (Exports)

UK . 486 parts In-Stock

1+ parts

-

100+ parts

$1.000

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-

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486

-

$1.000

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Distributors (In-Stock)

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Digiode

USA . 833 parts In-Stock

1+ parts

$0.795

100+ parts

-

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833

$0.795

-

-

-

TME

Poland . 71 parts In-Stock

1+ parts

$2.080

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71

$2.080

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Vyrian

USA . 4,216 parts In-Stock

1+ parts

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4,216

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Distributors (Availability)

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Corphita

USA . 102 parts In-Stock

1+ parts

$0.753

100+ parts

-

1k+ parts

-

10k+ parts

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102

$0.753

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-

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Modulus Dynamics

Lithuania . 7,489 parts In-Stock

1+ parts

$1.008

100+ parts

$0.968

1k+ parts

$0.927

10k+ parts

-

7,489

$1.008

$0.968

$0.927

-

Continental Prestige Electronics

USA . 889 parts In-Stock

1+ parts

$2.100

100+ parts

$1.340

1k+ parts

$0.851

10k+ parts

-

889

$2.100

$1.340

$0.851

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Microchip USA

USA . 4,447 parts In-Stock

1+ parts

$14.755

100+ parts

-

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10k+ parts

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4,447

$14.755

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 560 parts In-Stock

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100+ parts

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560

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Overview

Upgrade your power control applications with the IGP20N60H3XKSA1 from Infineon Technologies. This high-quality insulated gate bipolar transistor offers reliable performance and efficiency, thanks to its N-channel configuration and single package design. Perfect for a variety of power control tasks, this IGBT provides a quick turn-on time of 31 ns and a maximum operating temperature of 175°C. Trust in Infineon's expertise in semiconductor technology to bring you a product that delivers value, benefits, and advantages to meet your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the IGBT lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL

The N-channel type offers efficient power control capabilities, making it suitable for various applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and ensures easy integration into different systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers high performance and reliability.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and ensures efficient use of space in the system.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides reliable connections and ease of soldering during the assembly process.

Nominal Turn Off Time (toff): 241 ns

The low turn-off time of 241 ns ensures fast switching speeds and efficient power control capabilities.

No. of Terminals: 3

With 3 terminals, this IGBT offers simplified connectivity and compatibility with standard circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style facilitates secure mounting and ensures stable operation in different environments.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this IGBT can withstand high-temperature conditions without performance degradation.

Maximum Collector-Emitter Voltage: 600 V

The high collector-emitter voltage rating of 600V provides excellent voltage handling capabilities for various power control applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers high reliability, efficiency, and performance over a wide range of operating conditions.

Maximum Collector Current (IC): 40 A

With a maximum collector current of 40A, this IGBT can handle high power levels effectively, making it suitable for demanding applications.

Terminal Finish: TIN

The tin terminal finish ensures reliable connections and corrosion resistance, enhancing the longevity and performance of the IGBT.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and ensures consistent electrical connections for reliable performance.

Nominal Turn On Time (ton): 31 ns

The low turn-on time of 31 ns results in fast switching speeds, enabling precise power control and efficient operation.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGP20N60H3XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

241 ns

Nominal Turn On Time (ton):

31 ns

Trade Compliance

IGP20N60H3XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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