Loading...

IGP20N65F5XKSA1

Infineon Technologies

IGP20N65F5XKSA1 by Infineon Technologies

IGP20N65F5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 42A. It has a nominal turn-off time of 211ns and a turn-on time of 32ns, making it suitable for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.

Median Price

$0.898

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 300 parts In-Stock

1+ parts

$2.735

100+ parts

$1.219

1k+ parts

$0.891

10k+ parts

$0.806

300

$2.735

$1.219

$0.891

$0.806

Rochester

USA . 18,997 parts In-Stock

1+ parts

-

100+ parts

$0.866

1k+ parts

$0.719

10k+ parts

$0.641

18,997

-

$0.866

$0.719

$0.641

Verical

USA . 18,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.898

10k+ parts

$0.801

18,500

-

-

$0.898

$0.801

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Schukat

Germany . 52 parts In-Stock

1+ parts

$2.227

100+ parts

$1.276

1k+ parts

-

10k+ parts

-

52

$2.227

$1.276

-

-

Digiode

USA . 231 parts In-Stock

1+ parts

$2.356

100+ parts

-

1k+ parts

-

10k+ parts

-

231

$2.356

-

-

-

TME

Poland . 144 parts In-Stock

1+ parts

$3.030

100+ parts

$1.580

1k+ parts

-

10k+ parts

-

144

$3.030

$1.580

-

-

Vyrian

USA . 6,064 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,064

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 20,320 parts In-Stock

1+ parts

$1.913

100+ parts

$1.836

1k+ parts

$1.760

10k+ parts

-

20,320

$1.913

$1.836

$1.760

-

Corphita

USA . 137 parts In-Stock

1+ parts

$2.232

100+ parts

-

1k+ parts

-

10k+ parts

-

137

$2.232

-

-

-

Microchip USA

USA . 5,883 parts In-Stock

1+ parts

$10.625

100+ parts

-

1k+ parts

-

10k+ parts

-

5,883

$10.625

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Glotronic Ltd.

UK . 280 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

280

-

-

-

-

Overview

Unlock the power of efficient and reliable power control with the IGP20N65F5XKSA1 Insulated Gate Bipolar Transistor by Infineon Technologies. Manufactured with top-notch quality and expertise, this N-CHANNEL transistor offers unparalleled performance in a variety of applications. From industrial machinery to renewable energy systems, this single-configured IGBT provides customers with value, benefits, and advantages that are unmatched. Experience seamless operation and optimal power management with this high-quality product from Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the IGBT, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state resistance and higher switching speeds compared to P-CHANNEL, making it suitable for high power applications.

Configuration: SINGLE

SINGLE IGBTs are easier to drive and control compared to parallel configurations, simplifying the design of power control systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring efficient and reliable performance in controlling high power loads.

Maximum Collector-Emitter Voltage: 650 V

Can withstand high voltage levels, making it suitable for high power applications requiring significant voltage handling capabilities.

Maximum Collector Current (IC): 42 A

Capable of handling high current levels, making it suitable for applications requiring high power output.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGP20N65F5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

211 ns

Nominal Turn On Time (ton):

32 ns

Trade Compliance

IGP20N65F5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5