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IXSH24N60A

IXYS Corporation

IXSH24N60A by IXYS Corporation

IXYS Corporation's IXSH24N60A is an N-CHANNEL IGBT with 600V VCE, 48A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 150W and operates at up to 150°C. With fast switching times (ton:300ns, toff:925ns), it offers efficient performance in various power control systems.

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ECAB

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AZTECH Wire

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Andel Nordic

Denmark . 252 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Unlock the power of reliable and efficient power control with the IXSH24N60A Insulated Gate Bipolar Transistor by IXYS Corporation. Designed for high performance and durability, this N-channel transistor offers a maximum collector-emitter voltage of 600V and a maximum collector current of 48A. Ideal for a wide range of applications, from industrial to renewable energy systems, this IGBT provides superior quality and value. Trust IXYS Corporation to deliver cutting-edge technology that meets your power control needs with precision and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state resistance, making them more efficient for power control applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and ensures ease of use.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, making it a suitable choice for such requirements.

Maximum VCEsat: 2.7 V

Low VCEsat ensures minimal voltage drop across the collector-emitter terminals, leading to higher efficiency.

Maximum Fall Time (tf): 500 ns

Fast fall time allows for quick switching speeds, improving overall performance.

Maximum Collector- Emitter Voltage: 600 V

High collector-emitter voltage rating allows for use in high-power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXSH24N60A attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

HIGH SPEED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

500 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

150 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

925 ns

Nominal Turn On Time (ton):

300 ns

Maximum VCEsat:

2.7 V

Trade Compliance

IXSH24N60A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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