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STGB30NC60WT4

STMicroelectronics

STGB30NC60WT4 by STMicroelectronics

STGB30NC60WT4 from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 200W, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic systems.

Median Price

$2.494

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 55 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.494

10k+ parts

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55

-

-

$2.494

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,652 parts In-Stock

1+ parts

$3.135

100+ parts

-

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10k+ parts

-

4,652

$3.135

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-

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Vyrian

USA . 6,563 parts In-Stock

1+ parts

-

100+ parts

-

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6,563

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Anansix

USA . 884 parts In-Stock

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884

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,720 parts In-Stock

1+ parts

$1.030

100+ parts

-

1k+ parts

$0.927

10k+ parts

-

1,720

$1.030

-

$0.927

-

MKK Technologies

India . 1,134 parts In-Stock

1+ parts

$1.938

100+ parts

-

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-

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1,134

$1.938

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-

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DigiPath Technology Company

USA . 1,134 parts In-Stock

1+ parts

$1.938

100+ parts

-

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-

10k+ parts

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1,134

$1.938

-

-

-

Ampacity Inc.

Singapore . 230 parts In-Stock

1+ parts

$2.800

100+ parts

-

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230

$2.800

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Corphita

USA . 4,446 parts In-Stock

1+ parts

$2.970

100+ parts

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4,446

$2.970

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Perfect Parts

USA . 2,793 parts In-Stock

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2,793

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Microchip USA

USA . 352 parts In-Stock

1+ parts

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352

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Parana Technologies

USA . 23 parts In-Stock

1+ parts

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100+ parts

$1.232

1k+ parts

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23

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$1.232

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-

Overview

Elevate your motor control applications with the STGB30NC60WT4 from STMicroelectronics, a leader in semiconductor innovation. This high-performance IGBT delivers exceptional reliability and efficiency, ensuring optimal operation even under demanding conditions. With its robust design and advanced technology, it offers superior power management, reduced energy consumption, and enhanced system performance, making it the ideal choice for modern industrial solutions. Experience quality you can trust and take your projects further!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials offers excellent insulation properties and durability, making this IGBT suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL configuration provides efficient switching capabilities and is ideal for high-speed applications.

Configuration: SINGLE

A single configuration simplifies the design and reduces component count, making it easier to integrate into various circuits.

Transistor Application: MOTOR CONTROL

Optimized for motor control, this IGBT is an excellent choice for drives and inverters, enhancing overall performance.

Surface Mount: YES

The surface mount design allows for compact layouts and automated assembly, improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on PCBs while providing a stable mounting solution.

Terminal Form: GULL WING

Gull wing terminals enhance soldering ease and mechanical stability, ensuring robust connections in various applications.

Nominal Turn Off Time (toff): 189 ns

With a quick turn-off time, this IGBT enables efficient PWM control, improving system responsiveness.

No. of Terminals: 2

A simple 2-terminal design minimizes complexity and reduces the chance of connection errors.

Maximum Power Dissipation (Abs): 200 W

A high power dissipation rating allows for effective thermal management, supporting high-performance applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is well-suited for space-constrained applications and high-density mounting.

Maximum Operating Temperature: 150 °C

A high operating temperature provides reliability in demanding environments, ensuring continued performance.

Maximum Collector-Emitter Voltage: 600 V

A high voltage rating allows for usage in a wide range of applications, ensuring versatility.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, enabling efficient operation and performance.

Maximum Gate-Emitter Voltage: 20 V

A high gate-emitter voltage rating enhances flexibility in driving requirements, accommodating a variety of circuits.

Maximum Collector Current (IC): 60 A

With a robust current rating, this IGBT is capable of handling significant load currents, suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

A lower threshold voltage ensures efficient turn-on characteristics, reducing losses during operation.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, improving reliability over time.

Terminal Position: SINGLE

Single terminal position simplifies layout design, which can enhance manufacturing efficiency.

Maximum Time At Peak Reflow Temperature (s): 30

This specification aligns well with standard reflow processes, ensuring compatibility with automated assembly.

Peak Reflow Temperature °C: 245 °C

The high peak reflow temperature capability ensures reliable soldering during assembly while protecting component integrity.

Nominal Turn On Time (ton): 42.5 ns

A fast turn-on time allows for quick switching, making this IGBT suitable for high-frequency applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB30NC60WT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

189 ns

Nominal Turn On Time (ton):

42.5 ns

Trade Compliance

STGB30NC60WT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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