Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FP75R07N2E4BOSA1
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 650 V; JESD-30 Code: R-XUFM-X31;
ISOLATED
650 V
COMPLEX
R-XUFM-X31
7
31
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
NO
UPPER
POWER CONTROL
SILICON
320 ns
45 ns
FP75R12KT3BOSA1
Infineon Technologies' FP75R12KT3BOSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 105A, and max. collector-emitter voltage of 1200V. It has a nominal turn off time of 610ns and turn on time of 340ns, ideal for power control applications at up to 150°C operating temperature.
105 A
1200 V
R-XUFM-X35
35
150 Cel
Not Qualified
610 ns
340 ns
FS10R06VE3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; JESD-30 Code: R-XUFM-X13; Maximum Collector-Emitter Voltage: 600 V;
16 A
600 V
R-XUFM-X13
1
6
13
175 Cel
260 ns
26 ns
FS20R06VE3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
25 A
R-XUFM-W13
WIRE
250 ns
FS20R06W1E3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Package Style (Meter): FLANGE MOUNT; No. of Elements: 6;
35 A
R-XUFM-X15
15
57 ns
FS30R06W1E3BOMA1
FS30R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, max. collector current of 45A, and turn off time of 355ns. It is used for power control applications, featuring a max operating temp. of 175°C and max. collector-emitter voltage of 600V in a rectangular package style with flange mount.
45 A
355 ns
52 ns
FS35R12W1T4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 65 A; No. of Elements: 6; Case Connection: ISOLATED;
65 A
520 ns
FS50R06W1E3BOMA1
Infineon's FS50R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 70A, and turn off time of 370ns. Ideal for power control applications, it operates at up to 175°C with a max. collector-emitter voltage of 600V in a rectangular package style.
70 A
370 ns
FS50R12W2T4BOMA1
Infineon's FS50R12W2T4BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 83A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its fast turn-off time (490ns) and high operating temperature (175°C). Package style: FLANGE MOUNT, configuration: COMPLEX.
83 A
490 ns
185 ns
FS75R12W2T4BOMA1
Infineon's FS75R12W2T4BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector-emitter voltage of 1200V, and max. collector current of 107A. Ideal for power control applications, it features a nominal turn-off time of 490ns and nominal turn-on time of 185ns.
107 A
FZ1200R12KL4CNOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1900 A; Case Connection: ISOLATED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
1900 A
R-XUFM-X5
2
5
1290 ns
750 ns
FZ1600R12KL4CNOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2450 A; Package Shape: RECTANGULAR; JESD-30 Code: R-XUFM-X7;
2450 A
R-XUFM-X7
1310 ns
FZ2400R12KE3NOSA1
FZ2400R12KE3NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCE, 3200A IC, and 1140ns toff. It is used in high-power applications like industrial motor drives due to its complex configuration and fast switching times.
3200 A
1140 ns
890 ns
FZ3600R12KE3NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 4700 A; Qualification: Not Qualified; JESD-30 Code: R-XUFM-X9;
4700 A
R-XUFM-X9
3
9
880 ns
FZ400R65KE3NOSA1
FZ400R65KE3NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6500V VCEsat and 1200ns ton. Ideal for POWER CONTROL applications, it has a max operating temperature of 125°C. The transistor features a PLASTIC/EPOXY package body material and comes in a RECTANGULAR shape with 7 terminals.
6500 V
6.6 V
20 V
R-PUFM-X7
125 Cel
-50 Cel
PLASTIC/EPOXY
8100 ns
1200 ns
3.4 V
FP25R12KT3BOSA1
FP25R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, ideal for POWER CONTROL applications. It features a max Collector-Emitter Voltage of 1200V, Nominal Turn Off Time of 610ns, and Max Collector Current of 40A. This RECTANGULAR package has 24 terminals and operates at a max temperature of 150°C.
40 A
R-XUFM-X24
24
140 ns
FP25R12W2T4BOMA1
FP25R12W2T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 39A. Ideal for power control applications, it has a turn off time of 685ns and turn on time of 133ns. The package style is flange mount with a rectangular shape and isolated case connection.
39 A
685 ns
133 ns
FP35R12KT4BOSA1
FP35R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn-off time of 620ns. It is used in applications requiring high power switching capabilities at up to 150°C operating temperature. The transistor's silicon material and complex configuration make it suitable for various industrial uses.
R-XUFM-X23
23
620 ns
210 ns
FP50R12KT4GBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Element Material: SILICON; No. of Elements: 7; Maximum Collector-Emitter Voltage: 1200 V;
630 ns
107 ns
FP75R12KE3BOSA1
FP75R12KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements and a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 610ns and a max collector current of 105A, making it suitable for high-power applications like industrial motor drives and renewable energy systems.
330 ns
FP75R12KT4BOSA1
FP75R12KT4BOSA1 by Infineon is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn off time of 620ns. Ideal for high-power applications requiring fast switching such as motor drives, renewable energy systems, and industrial automation due to its complex configuration and isolated case connection.
FS200R07N3E4RBOSA1
FS200R07N3E4RBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, 650V max collector-emitter voltage, and 210ns turn on time. It is used for power control applications due to its complex configuration and flange mount package style.
450 ns
FS30R06VE3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 34 A; Package Shape: RECTANGULAR; No. of Terminals: 13;
34 A
245 ns
42 ns
FS75R07U1E4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 275 W; Maximum Collector Current (IC): 100 A; Package Shape: RECTANGULAR;
100 A
6.5 V
R-XUFM-X32
32
-40 Cel
275 W
UL APPROVED
302 ns
43 ns
1.95 V
FZ1200R12KE3NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
1700 A
870 ns
F3L200R07PE4BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector-Emitter Voltage: 650 V; Package Body Material: UNSPECIFIED; Package Shape: RECTANGULAR;
R-XUFM-X20
4
20
600 ns
190 ns
F3L300R07PE4BOSA1
Infineon's F3L300R07PE4BOSA1 IGBT features N-CHANNEL polarity, 650V max collector-emitter voltage, and 4 elements. Ideal for power control applications with a nominal turn-off time of 600ns and turn-on time of 190ns. Package style is flange mount with isolated case connection.
FB20R06W1E3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 29 A; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
29 A
37 ns
FB30R06W1E3BOMA1
Infineon Technologies' FB30R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector-emitter voltage of 600V, and max. collector current of 39A. It has a nominal turn-off time of 245ns and turn-on time of 42ns, suitable for applications requiring high power switching like motor drives and inverters at up to 175°C operating temperature.
FZ800R33KL2CNOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 9800 W; Maximum Collector Current (IC): 1500 A; Transistor Element Material: SILICON;
1500 A
3300 V
9800 W
Insulated Gate BIP Transistors
4250 ns
1700 ns
3.65 V
FZ500R65KE3NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Form: UNSPECIFIED; Qualification: Not Qualified; Nominal Turn Off Time (toff): 8100 ns;
FZ600R65KE3NOSA1
FZ600R65KE3NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6500V max collector-emitter voltage. It has a complex configuration, 3 elements, and 1200ns nominal turn on time. Ideal for power control applications due to its isolated case connection and flange mount package style.
FP25R12KE3BOSA1
FP25R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 610ns nominal turn off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and isolated case connection.
135 ns
FZ1200R45KL3B5NOSA1
FZ1200R45KL3B5NOSA1 by Infineon is an N-CHANNEL IGBT with 4500V VCE, 7350ns toff, and 1050ns ton. Ideal for power control applications due to its complex configuration and three elements. Package style is flange mount with nine terminals in a rectangular shape.
4500 V
7350 ns
1050 ns
DF80R12W2H3B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 50 A; Nominal Turn On Time (ton): 49 ns;
50 A
R-XUFM-X22
22
190 W
49 ns
1.7 V
F1225R12KT4GBOSA1
F1225R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 12 elements, 1200V max collector-emitter voltage, and 55ns nominal turn on time. It is used for power control applications due to its complex configuration and UL recognized reference standard.
R-XUFM-X38
12
38
UL RECOGNIZED
470 ns
55 ns
F1235R12KT4GBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: POWER CONTROL;
F3L100R07W2E3B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 117 A; Terminal Form: UNSPECIFIED; Transistor Element Material: SILICON;
117 A
R-XUFM-X14
14
345 ns
95 ns
F3L150R07W2E3B11BOMA1
Infineon's F3L150R07W2E3B11BOMA1 IGBT features N-CHANNEL polarity, 650V VCEmax, and 150A IC. Ideal for power control applications with a max operating temp of 150°C. Complex configuration with 4 elements, 480ns toff, and 155ns ton for efficient power management.
150 A
R-XUFM-X34
34
335 W
480 ns
155 ns
1.9 V
F475R06W1E3BOMA1
Infineon's F475R06W1E3BOMA1 IGBT features N-CHANNEL polarity, 600V max. collector-emitter voltage, and 100A max. collector current. Ideal for power control applications with a complex configuration, it offers fast turn-off time of 330ns and turn-on time of 45ns in a rectangular package with flange mount style.
R-XUFM-X11
11
FB20R06W1E3B11HOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 29 A; Maximum Gate-Emitter Voltage: 20 V;
94 W
2 V
FS50R07W1E3B11ABOMA1
Infineon's FS50R07W1E3B11ABOMA1 is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 250ns toff. Ideal for power control applications, this complex transistor has 6 elements in a rectangular package with flange mount style.
R-XUFM-X18
18
FS75R07W2E3B11ABOMA1
Infineon Technologies' FS75R07W2E3B11ABOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 95A, and max. collector-emitter voltage of 650V. Ideal for power control applications due to its complex configuration and fast turn on/off times (44ns/258ns). Package style: Flange mount with isolated case connection.
95 A
258 ns
44 ns
FP75R07N2E4B11BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; JESD-30 Code: R-XUFM-X31; Transistor Element Material: SILICON;
FP75R12KT4B11BOSA1
FP75R12KT4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max VCE of 1200V. It has a toff of 620ns and ton of 210ns, making it ideal for power control applications. The transistor is UL approved and features a complex configuration in a rectangular package style with flange mount.
FP75R12KT4B15BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn Off Time (toff): 620 ns;
75 A
FS10R06VE3B2BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Transistor Application: POWER CONTROL; Nominal Turn Off Time (toff): 260 ns;
FS15R06VE3B2BOMA1
Infineon's FS15R06VE3B2BOMA1 is a N-CHANNEL IGBT with 6 elements, 600V max collector-emitter voltage, and 22A max collector current. Ideal for power control applications, it features a complex configuration, 260ns turn off time, and UL recognized standard.
22 A
29 ns
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