Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FD16001200R17HP4B2BOSA2
Infineon Technologies
Infineon's FD16001200R17HP4B2BOSA2 IGBT features N-CHANNEL polarity, COMPLEX configuration, and 1700V max. collector-emitter voltage. Ideal for POWER CONTROL applications with 1710ns turn-off time and 650ns turn-on time. Package style is FLANGE MOUNT with 9 terminals in RECTANGULAR shape.
ISOLATED
1700 V
COMPLEX
R-XUFM-X9
1
2
9
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
NO
UPPER
POWER CONTROL
SILICON
1710 ns
650 ns
FZ2400R17HP4B28BOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Element Material: SILICON; No. of Elements: 3; Terminal Position: UPPER;
R-PUFM-X9
3
-40 Cel
PLASTIC/EPOXY
UL APPROVED
1800 ns
710 ns
FZ3600R17HE4PHPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 9; Transistor Application: POWER CONTROL; Minimum Operating Temperature: -40 Cel;
NOT SPECIFIED
2245 ns
1075 ns
IFS150B12N3E4PB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 220 A; Terminal Form: UNSPECIFIED;
220 A
1200 V
6.35 V
20 V
R-XUFM-X41
6
41
150 Cel
750 W
UL RECOGNIZED
640 ns
240 ns
2.1 V
FZ1200R17HE4PHPSA1
FZ1200R17HE4PHPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It has a complex configuration, 2 elements, and 7 terminals. Ideal for power control applications, it offers a turn-off time of 1760ns and turn-on time of 955ns. The package style is flange mount with plastic/epoxy body material.
R-PUFM-X7
7
1760 ns
955 ns
FZ1200R45HL3BPSA1
FZ1200R45HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4500V max collector-emitter voltage. It has a complex configuration, 6670ns turn-off time, and 1100ns turn-on time. Ideal for power control applications, this device features a plastic/epoxy package body and operates from -40°C.
4500 V
IEC-1287
6670 ns
1100 ns
FZ1600R17HP4B21BOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Terminal Position: UPPER; Maximum Collector-Emitter Voltage: 1700 V;
690 ns
FZ2400R17HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; No. of Elements: 3;
2100 ns
760 ns
FZ2400R17HE4PB9HPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 760 ns; Nominal Turn Off Time (toff): 2100 ns;
FP10R12W1T4PBPSA1
Infineon Technologies' FP10R12W1T4PBPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 20A. It has a nominal turn off time of 500ns and turn on time of 108ns, ideal for power control applications at up to 175°C operating temperature.
20 A
R-XUFM-X23
23
175 Cel
500 ns
108 ns
FP15R12W1T4PBPSA1
FP15R12W1T4PBPSA1 by Infineon is an N-CHANNEL IGBT with 7 elements, max. collector current of 28A, and max. collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 495ns and nominal turn on time of 120ns. The transistor's complex configuration and isolated case connection make it suitable for high-power operations at up to 175°C.
28 A
495 ns
120 ns
FP35R12KT4PBPSA1
FP35R12KT4PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and nominal turn-off time of 620ns. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and silicon transistor element material.
620 ns
210 ns
FP50R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 7; Maximum Collector-Emitter Voltage: 1200 V; Peak Reflow Temperature (C): NOT SPECIFIED;
FP75R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 7; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
R-XUFM-X35
35
FP10R12YT3B4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 70 ns;
16 A
540 ns
70 ns
FS15R06XL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Position: UPPER; Case Connection: ISOLATED;
600 V
R-XUFM-X16
16
135 ns
29 ns
FP10R12W1T4PB11BPSA1
Infineon's FP10R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
FP15R12W1T4PB11BPSA1
Infineon's FP15R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V VCEsat, 510ns toff, and 130ns ton. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Operating temperature ranges from -40°C to 150°C making it suitable for various industrial uses.
6.4 V
510 ns
130 ns
2.25 V
FP25R12W2T4PB11BPSA1
Infineon's FP25R12W2T4PB11BPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 39A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its complex configuration, fast turn-on time (47ns), and isolated case connection for high-power operations at up to 175°C.
39 A
520 ns
47 ns
FP35R12W2T4PB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Terminal Form: UNSPECIFIED; Maximum Operating Temperature: 150 Cel;
54 A
43 ns
FP75R12KT4PB11BPSA1
Infineon Technologies' FP75R12KT4PB11BPSA1 is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn off time of 620ns. It's used in applications requiring high power switching like motor drives and renewable energy systems due to its complex configuration and silicon material.
FP75R17N3E4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 125 A; Package Style (Meter): FLANGE MOUNT; Transistor Application: POWER CONTROL;
125 A
800 ns
305 ns
FZ1200R12HE4PHPSA1
FZ1200R12HE4PHPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 1825A IC, and 660ns ton. It is used for POWER CONTROL applications requiring high current handling and fast switching capabilities in a FLANGE MOUNT package style.
1825 A
1130 ns
660 ns
FZ2400R12HE4PB9HPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn On Time (ton): 880 ns; Minimum Operating Temperature: -40 Cel; Transistor Application: POWER CONTROL;
1320 ns
880 ns
F3L300R07PE4PBOSA1
F3L300R07PE4PBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements, featuring a max. collector-emitter voltage of 650V. It has a nominal turn-off time of 600ns and turn-on time of 190ns, ideal for power control applications. The transistor's complex configuration and isolated case connection make it suitable for high-power systems requiring precise switching capabilities.
650 V
R-XUFM-X20
4
20
600 ns
190 ns
F3L100R12W2H3B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 32; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-XUFM-X32;
R-XUFM-X32
32
GENERAL PURPOSE
465 ns
175 ns
F3L150R12W2H3B11BPSA1
F3L150R12W2H3B11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements, 1200V max collector-emitter voltage, and 510ns turn-off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.
F3L200R12W2H3B11BPSA1
F3L200R12W2H3B11BPSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has 4 elements, 32 terminals, and a complex configuration for power control applications. Featuring a turn-off time of 480ns and turn-on time of 190ns, it is UL approved and operates from -40°C.
480 ns
F475R07W2H3B51BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED; No. of Terminals: 28;
75 A
R-XUFM-X28
28
300 ns
45 ns
F3L400R12PT4PB26BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT;
R-XUFM-X18
18
610 ns
350 ns
FP150R12KT4B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Body Material: UNSPECIFIED; Reference Standard: UL RECOGNIZED; Case Connection: ISOLATED;
R-XUFM-X43
43
750 ns
270 ns
FP150R12KT4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 43; No. of Elements: 7; Package Style (Meter): FLANGE MOUNT;
FP150R12KT4PB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 270 ns;
FP150R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Gate-Emitter Threshold Voltage: 6.35 V; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON;
FP75R17N3E4B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn On Time (ton): 305 ns; Terminal Position: UPPER; Maximum Collector-Emitter Voltage: 1700 V;
FZ1200R12HE4HOSA2
FZ1200R12HE4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 1825A max collector current. It has a complex configuration for power control applications, featuring a nominal turn-off time of 1130ns and turn-on time of 660ns. The package style is flange mount with 7 terminals in a rectangular shape.
FZ1200R17HE4HOSA2
Infineon's FZ1200R17HE4HOSA2 IGBT features N-CHANNEL configuration, 1700V VCEsat, and 7800W power dissipation. Ideal for power control applications with UL approval, it operates b/w -40 to 150°C temperatures efficiently.
7800 W
2.3 V
DF160R12W2H3FB11BPSA1
Infineon's DF160R12W2H3FB11BPSA1 IGBT features N-CHANNEL polarity, 1200V max collector-emitter voltage, and 375ns nominal turn-off time. Ideal for power control applications with complex configuration, it has 4 elements and operates from -40°C with a 30-terminal flange mount package.
R-XUFM-X30
30
375 ns
40 ns
DF200R12W1H3FB11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; JESD-30 Code: R-XUFM-X18; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 1200 V;
475 ns
27 ns
DF75R12W1H4FB11BOMA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: POWER CONTROL; JESD-30 Code: R-XUFM-X17;
R-XUFM-X17
17
58 ns
DF80R12W2H3FB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel; Package Style (Meter): FLANGE MOUNT;
R-XUFM-X22
22
DF200R12W1H3B27BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Nominal Turn Off Time (toff): 475 ns; Package Style (Meter): FLANGE MOUNT;
50 A
F3L75R12W1H3B11BPSA1
Infineon's F3L75R12W1H3B11BPSA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring N-channel complex configuration with 4 elements, such as power electronics and motor drives.
45 A
R-XUFM-X21
21
385 ns
42 ns
F3L75R12W1H3B27BOMA1
Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.
F450R07W1H3B11ABOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Nominal Turn On Time (ton): 32 ns; JESD-30 Code: R-XUFM-X20;
55 A
203 ns
32 ns
FB10R06KL4GB1BOMA1
Infineon Technologies' FB10R06KL4GB1BOMA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 260ns nominal turn-off time. It has a complex configuration with 7 elements in a rectangular package style for flange mount applications.
15 A
260 ns
FB15R06KL4B1BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 19 A; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
19 A
R-XUFM-X26
26
249 ns
71 ns
FS3L25R12W2H3B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Elements: 12; Transistor Element Material: SILICON;
40 A
R-XUFM-X34
12
34
295 ns
95 ns
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