Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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STGFW30V60DF
STMicroelectronics
STGFW30V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Pmax of 58W. Ideal for power control applications due to its fast turn-off time (toff) of 225ns and high collector-emitter voltage of 600V. Suitable for use in isolated case connections at temperatures ranging from -55 °C to 175°C.
ISOLATED
60 A
600 V
SINGLE WITH BUILT-IN DIODE
7 V
20 V
R-PSFM-T3
1
3
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
58 W
NO
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
225 ns
59 ns
2.3 V
STGFW80V60F
STGFW80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Ptot of 79W. Ideal for POWER CONTROL applications due to its fast turn-off time (262ns) and high operating temperature range (-55 to 175 °C).
120 A
79 W
262 ns
90 ns
STGW80V60F
STGW80V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for power control applications due to its fast turn-off time (262ns) and high collector-emitter voltage (600V). Package style: FLANGE MOUNT.
TO-247
469 W
STGWT80V60F
STGWT80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for POWER CONTROL applications due to its fast ton of 90ns and toff of 262ns at a max VCE of 600V.
COLLECTOR
HGT1N40N60A4D
Fairchild Semiconductor
Fairchild Semiconductor's HGT1N40N60A4D is an N-CHANNEL IGBT with 110A IC, 600V VCE, and 298W Pd. Ideal for POWER CONTROL applications, it features a toff of 240ns, tf of 95ns, and ton of 47ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
LOW CONDUCTION LOSS
110 A
95 ns
R-PUFM-X4
4
150 Cel
298 W
Not Qualified
Insulated Gate BIP Transistors
UNSPECIFIED
UPPER
240 ns
47 ns
STGW40NC60W
STGW40NC60W by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.
70 A
5.75 V
TO-247AC
250 W
280 ns
46 ns
STGW45NC60WD
STGW45NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 90A max collector current, and 285W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.
90 A
e3
285 W
Matte Tin (Sn)
IFS100B12N3E4_B39
Infineon Technologies
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON;
100 A
1200 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
R-XUFM-X34
6
34
515 W
UL RECOGNIZED
610 ns
210 ns
2.1 V
NGB8206N
Onsemi
NGB8206N by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 390V, max gate-emitter voltage of 15V, and max collector current of 20A. With a package style of SMALL OUTLINE and peak reflow temperature of 235 °C, it offers reliable performance in high-power automotive systems.
20 A
390 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
14000 ns
15 V
R-PSSO-G2
e0
2
SMALL OUTLINE
235
150 W
8000 ns
YES
TIN LEAD
GULL WING
AUTOMOTIVE IGNITION
18500 ns
6500 ns
STGF10NC60SD
STGF10NC60SD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, a turn-off time of 560ns, and can handle up to 10A current. Ideal for applications in industrial motor drives and power converters.
ULTRA FAST
10 A
TO-220AB
25 W
MATTE TIN
560 ns
22.5 ns
STGP10NC60S
STGP10NC60S from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 62.5W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various circuits.
21 A
62.5 W
MOTOR CONTROL
STGB14NC60KT4
STGB14NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic systems.
25 A
6.5 V
R-PDSO-G2
80 W
DUAL
340 ns
31.5 ns
NGB8206NTF4
NGB8206NTF4 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and a Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. The transistor has a Nominal Turn Off Time of 18500ns and Nominal Turn On Time of 6500ns, suitable for fast switching requirements in automotive systems.
Tin/Lead (Sn80Pb20)
IHW15N120R2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Voltage: 20 V;
30 A
6.4 V
TO-247AD
357 W
432 ns
IHW20N120R2
IHW20N120R2 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. With a nominal turn-off time of 526ns, it is ideal for applications requiring high power dissipation up to 330W in industrial settings. The package style is flange mount with through-hole terminals, making it suitable for various power electronics applications.
40 A
330 W
526 ns
IHW30N100R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 412 W; Maximum Collector Current (IC): 60 A; Case Connection: COLLECTOR;
1000 V
412 W
TIN
988.4 ns
IHW30N120R2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 60 A; JEDEC-95 Code: TO-247AD;
390 W
900 ns
IHW30N90R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
900 V
454 W
640 ns
STGW35HF60WDI
STGW35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of just 295 ns, and can handle up to 200 W dissipation. Ideal for high-performance switching in industrial systems.
200 W
295 ns
45 ns
STGW45HF60WDI
STGW45HF60WDI by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications requiring a single transistor with built-in diode in a rectangular package style.
STGWA35HF60WDI
STGWA35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 70A current capacity, and a fast turn-off time of 295ns. Ideal for high-performance switching in industrial systems.
260 W
STGWA45HF60WDI
STGWA45HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max power dissipation of 310 W, operates up to 150 °C, and supports voltages up to 600 V. Ideal for applications requiring robust performance in demanding environments.
80 A
310 W
STGD10NC60KT4
STGD10NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of 242 ns, and can handle up to 20 A. Ideal for compact designs with its surface mount configuration.
60 W
242 ns
23 ns
STGP10NC60K
STGP10NC60K from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 60 W, and operates at up to 150 °C. Its fast switching times (ton: 23 ns, toff: 242 ns) enhance efficiency in various electronic systems.
STGP19NC60WD
STGP19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 40A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.
125 W
204 ns
33 ns
STGW19NC60WD
STGW19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 42A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.
42 A
STG3P2M10N60B
STG3P2M10N60B from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.5V, supports up to 600V, and has a nominal turn-off time of just 99ns. Ideal for high-performance applications in industrial drives and renewable energy systems.
19 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X16
16
56 W
99 ns
27 ns
2.5 V
STGW30NC60VD
STGW30NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.
42.5 ns
STGW40NC60WD
STGW40NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 280 ns. Ideal for high-performance switching in industrial systems.
STGF19NC60WD
STGF19NC60WD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 32W, and operates at up to 150 °C. Its fast switching times (ton: 25ns, toff: 127ns) enhance efficiency.
14 A
32 W
127 ns
25 ns
STGE50NC60WD
STGE50NC60WD from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.6V, supports up to 100A collector current, and operates at a max temp of 150 °C. Its compact flange mount design ensures efficient thermal management.
343 ns
69 ns
2.6 V
QID4515001
Powerex
Powerex QID4515001 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 3.9V and can handle a Max Collector Current of 150A. Ideal for POWER CONTROL applications due to its high power dissipation capability of 1440W and max operating temperature of 150°C.
150 A
4500 V
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
1200 ns
7.5 V
R-PUFM-X8
8
-40 Cel
1440 W
IEC-60077-1; IEC-1287
500 ns
4700 ns
2000 ns
3.9 V
STGP19NC60W
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;
STGE50NC60VD
STGE50NC60VD by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 90A, and Pmax of 260W. Ideal for power control applications due to its fast turn-off time (toff) of 247ns and turn-on time (ton) of 61ns. Operates at a max temperature of 150°C with a collector-emitter voltage rating of 600V.
R-XUFM-X4
247 ns
61 ns
STGB6NC60HD-1
STGB6NC60HD-1 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 222ns, and can handle up to 15A of current. This robust device operates efficiently in high-temperature environments up to 150 °C.
15 A
TO-262AA
R-PSIP-T3
IN-LINE
222 ns
17.3 ns
STGB18N40LZ-1
STGB18N40LZ-1 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.
VOLTAGE CLAMPING
420 V
16 V
22200 ns
4450 ns
STGD18N40LZ-1
STGD18N40LZ-1 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 125 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.
TO-251
STGW35NB60S
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;
5 V
3600 ns
153 ns
STGBL6NC60DT4
STGBL6NC60DT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for applications in energy conversion and motor drives.
TO-263AB
245
30
122 ns
10.5 ns
STGDL6NC60DT4
STGDL6NC60DT4 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 122ns, and operates at up to 150 °C. Its compact surface mount design ensures efficient thermal management.
13 A
TO-252AA
260
50 W
Matte Tin (Sn) - annealed
STGFL6NC60D
STGFL6NC60D by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 122ns, and can handle up to 7A current. Its robust design ensures reliable performance in demanding environments.
7 A
22 W
STGPL6NC60D
STGPL6NC60D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for high-temperature environments with a max operating temp of 150 °C.
STGW30N90D
STGW30N90D from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 900 V, a power dissipation of 220 W, and operates at up to 150 °C. Its fast switching times (ton: 41 ns, toff: 928 ns) enhance efficiency in various electronic systems.
25 V
220 W
928 ns
41 ns
APT30GS60BRDQ2(G)
Microsemi
Microsemi's APT30GS60BRDQ2(G) is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 54A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 412ns. Package style is flange mount with through-hole terminals.
54 A
e1
TIN SILVER COPPER
412 ns
STGF10NC60HD
STGF10NC60HD from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, 20A collector current, and fast switching times (ton: 19ns, toff: 247ns). Its compact flange mount design ensures efficient thermal management.
23 W
19 ns
STGF8NC60KD
STGF8NC60KD by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 242ns, and can handle up to 7A current. Its robust design ensures reliable performance in demanding environments.
24 W
STGP19NC60S
STGP19NC60S by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 125 W, and operates at up to 150 °C. Its fast switching times (ton: 23.5 ns, toff: 535 ns) enhance performance in various electronic systems.
FREE WHEELING DIODE
50 A
535 ns
23.5 ns
STGP8NC60KD
STGP8NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 65W Ptot. It is used for power control applications due to its fast turn-off time of 242ns and built-in diode configuration. The package style is flange mount with a max operating temperature of 150°C.
65 W
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