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STGB18N40LZ-1

STMicroelectronics

STGB18N40LZ-1 by STMicroelectronics

STGB18N40LZ-1 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,763 parts In-Stock

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Anansix

USA . 2,702 parts In-Stock

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2,702

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Digiode

USA . 1,801 parts In-Stock

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1,801

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Distributors (Availability)

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.439

100+ parts

$0.399

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$0.360

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600

$0.439

$0.399

$0.360

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IDEA Electronic Components Group

UK . 333 parts In-Stock

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$1.706

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-

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$1.535

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333

$1.706

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$1.535

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MKK Technologies

India . 500 parts In-Stock

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$3.207

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500

$3.207

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DigiPath Technology Company

USA . 500 parts In-Stock

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$3.207

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500

$3.207

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AZTECH Wire

Italy . 818 parts In-Stock

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$17.100

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818

$17.100

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,867 parts In-Stock

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Parana Technologies

USA . 1,930 parts In-Stock

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$2.039

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$2.039

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Corphita

USA . 656 parts In-Stock

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Overview

Elevate your automotive ignition systems with the STGB18N40LZ-1 from STMicroelectronics, a leader in innovation and quality. This N-channel IGBT combines exceptional reliability with robust performance, allowing for efficient power management in demanding applications. Designed for durability, it ensures maximum efficiency even at high temperatures. Trust in STMicroelectronics to enhance your designs with cutting-edge technology that delivers outstanding value and long-term benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel devices typically offer better performance characteristics, making this IGBT an efficient choice for high-speed applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

This configuration simplifies circuit design and enhances reliability by reducing the need for additional components.

Transistor Application: AUTOMOTIVE IGNITION

Designed specifically for automotive ignition, this IGBT can handle the high demands and stresses of automotive applications.

Package Shape: RECTANGULAR

A rectangular shape allows for efficient use of space on a PCB and improves thermal management.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, enhancing reliability in high-vibration environments.

Nominal Turn Off Time (toff): 22200 ns

The relatively slow turn-off time can be advantageous in certain applications where soft switching is desired, reducing stress on the circuit.

No. of Terminals: 3

A 3-terminal configuration is ideal for simplicity in design while providing the essential functionality needed for effective operation.

Maximum Power Dissipation (Abs): 150 W

With a maximum power dissipation of 150 W, this IGBT can manage high power levels, making it suitable for demanding applications.

Package Style (Meter): IN-LINE

The in-line package style is conducive to space-saving designs and easy integration into various electronic systems.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature enables this IGBT to function reliably in harsh conditions, extending its application range.

Maximum Collector-Emitter Voltage: 420 V

The ability to handle up to 420 V makes this IGBT suitable for high-voltage applications, ensuring operational safety and efficiency.

Transistor Element Material: SILICON

Silicon-based IGBTs are known for their efficiency and linearity, making this material an ideal choice for various applications.

Maximum Gate-Emitter Voltage: 16 V

A maximum gate-emitter voltage of 16 V allows for versatile control, enabling efficient switching characteristics.

Maximum Collector Current (IC): 30 A

With a maximum collector current rating of 30 A, this IGBT is capable of handling substantial current loads, making it suitable for high power applications.

Maximum Gate-Emitter Threshold Voltage: 2.3 V

A low gate-emitter threshold voltage of 2.3 V enhances device sensitivity and reduces power consumption during switching.

Terminal Finish: MATTE TIN

A matte tin finish improves solderability, which is crucial for reliable connections in high-performance applications.

Terminal Position: SINGLE

A single terminal position simplifies the design and layout on PCB, providing easier handling and assembly.

Case Connection: COLLECTOR

Having a collector case connection facilitates better thermal dissipation, which is essential for maintaining performance during operation.

Nominal Turn On Time (ton): 4450 ns

A fast turn-on time of 4450 ns enables high-frequency switching applications, making it ideal for modern electronic circuits.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB18N40LZ-1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Additional Features:

VOLTAGE CLAMPING

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

420 V

Maximum Gate-Emitter Threshold Voltage:

2.3 V

Maximum Gate-Emitter Voltage:

16 V

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

22200 ns

Nominal Turn On Time (ton):

4450 ns

Trade Compliance

STGB18N40LZ-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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