Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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FP35R12KT4B15BOSA1
Infineon Technologies
FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).
ISOLATED
1200 V
COMPLEX
6.4 V
20 V
R-XUFM-X24
7
24
150 Cel
-40 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
210 W
UL APPROVED
NO
UPPER
POWER CONTROL
SILICON
620 ns
210 ns
2.15 V
FP35R12W2T4B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Package Body Material: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
54 A
R-XUFM-X23
23
510 ns
43 ns
FP50R07N2E4B11BOSA1
FP50R07N2E4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 31 terminals, and a max IC of 70 A. It has a VCE of 650 V and toff of 265 ns. Ideal for power control applications due to its fast ton of 43 ns and UL approval.
70 A
650 V
R-XUFM-X31
31
265 ns
FP50R07U1E4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 650 V;
75 A
274 ns
40 ns
FP50R12KT4B11BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 620 ns; Case Connection: ISOLATED; Package Shape: RECTANGULAR;
FP50R12KT4GB15BOSA1
Infineon Technologies' FP50R12KT4GB15BOSA1 is an N-CHANNEL IGBT with 7 elements, 1200V max collector-emitter voltage, and 620ns turn-off time. Ideal for power control applications, it features a complex configuration and UL approval in a rectangular package with 35 terminals.
R-XUFM-X35
35
FS3L30R07W2H3FB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Nominal Turn Off Time (toff): 350 ns; Transistor Application: POWER CONTROL;
45 A
R-XUFM-X32
12
32
350 ns
88 ns
FS3L50R07W2H3FB11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: UNSPECIFIED;
346 ns
84 ns
FZ2400R12HE4B9NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 3560 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: POWER CONTROL;
3560 A
R-PUFM-X9
3
9
PLASTIC/EPOXY
1320 ns
880 ns
IFS150B12N3E4B31BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 41; No. of Elements: 6;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
R-XUFM-X41
6
41
640 ns
240 ns
IFS75B12N3E4B31BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Nominal Turn On Time (ton): 185 ns;
R-XUFM-X34
34
UL RECOGNIZED
570 ns
185 ns
DF200R12PT4B6BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 300 A; Transistor Application: POWER CONTROL;
300 A
R-XUFM-X20
20
1100 W
407 ns
225 ns
2.1 V
FD1000R33HE3KBOSA1
N-Channel; Maximum Power Dissipation (Abs): 9600 W; Maximum VCEsat: 3.1 V; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
3300 V
-50 Cel
N-Channel
9600 W
3550 ns
1150 ns
3.1 V
FD1200R17KE3KNOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1600 A; Terminal Position: UPPER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
1600 A
1700 V
SINGLE WITH BUILT-IN DIODE
R-XUFM-X7
1
2100 ns
1050 ns
FD300R12KS4B5HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1950 W; Maximum Collector Current (IC): 370 A; No. of Elements: 1;
370 A
6.5 V
125 Cel
1950 W
590 ns
180 ns
3.75 V
FD400R12KE3B5HOSA1
Infineon's FD400R12KE3B5HOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 580A max collector current. Featuring a single configuration with built-in diode, it has a turn on time of 400ns and turn off time of 830ns. Ideal for high-power applications requiring fast switching capabilities in industrial machinery and power electronics.
580 A
R-XUFM-X5
5
830 ns
400 ns
FD401R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 3150 W; Maximum Collector Current (IC): 650 A; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Nominal Turn Off Time (toff): 1210 ns;
650 A
3150 W
1210 ns
550 ns
FF400R12KE3B2HOSA1
FF400R12KE3B2HOSA1 by Infineon is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, VCEsat of 2.15V, and IC of 580A. Ideal for high-power applications requiring fast switching capabilities up to 125°C, it features a max VCE of 1200V and power dissipation of 2000W.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
2
2000 W
760 ns
345 ns
FF800R17KP4B2NOSA2
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; JESD-30 Code: R-XUFM-X10; Transistor Element Material: SILICON;
1200 A
SEPARATE, 2 ELEMENTS
R-XUFM-X10
10
1650 ns
790 ns
FP06R12W1T4B3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 12 A; Nominal Turn Off Time (toff): 565 ns;
12 A
94 W
565 ns
95 ns
2.25 V
FS150R17N3E4B11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 835 W; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
835 W
1240 ns
280 ns
2.3 V
FZ1600R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 12500 W; Maximum Collector Current (IC): 2600 A; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1700 V; Peak Reflow Temperature (C): NOT SPECIFIED;
2600 A
12500 W
1360 ns
490 ns
FZ800R12KS4B2NOSA1
FZ800R12KS4B2NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 1200A max collector current. It has a complex configuration, 660ns turn-off time, and 225ns turn-on time. Ideal for high-power applications requiring fast switching capabilities in industrial equipment and power electronics systems.
660 ns
FZ800R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 6600 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1220 ns; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;
1300 A
6600 W
1220 ns
440 ns
FZ800R45KL3B5NOSA2
FZ800R45KL3B5NOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 4500V VCEsat, 9000W power dissipation, and 7350ns turn-off time. Ideal for power control applications, it features a complex configuration in a rectangular package with flange mount style for high-power operations up to 125°C.
4500 V
6.6 V
R-PUFM-X7
9000 W
7350 ns
2.85 V
FZ1200R17KE3B2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 8950 W; Maximum Collector Current (IC): 1900 A; Maximum Operating Temperature: 125 Cel; Maximum VCEsat: 2.45 V; Case Connection: ISOLATED;
1900 A
8950 W
1900 ns
900 ns
2.45 V
FZ1200R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1950 A; Maximum VCEsat: 3.1 V; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
1950 A
460 ns
FZ1600R17KE3B2NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2400 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2400 A
FZ2400R17HE4B9NPSA1
N-Channel; Maximum Power Dissipation (Abs): 15500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: ISOLATED; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON;
15500 W
FZ3600R17KE3B2NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 20000 W; Maximum Collector Current (IC): 4800 A; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
4800 A
R-XUFM-X9
20000 W
FZ600R17KE3S4HOSA1
Infineon Technologies' FZ600R17KE3S4HOSA1 is an N-CHANNEL IGBT with 1700V VCE, 840A IC, and 3150W power dissipation. Ideal for power control applications, it features a built-in diode, UL approval, and operates b/w -40 to 125°C.
840 A
1200 ns
VS-40MT120UHAPBF
Vishay Intertechnology
VS-40MT120UHAPBF by Vishay Intertechnology is an IGBT with N-CHANNEL polarity, 2 elements with built-in diode. It has a max VCEsat of 4.91V and can handle up to 80A collector current. Ideal for power control applications due to its high power dissipation of 463W and max operating temperature of 150°C.
80 A
6 V
R-PUFM-P10
463 W
PIN/PEG
4.91 V
STGFW30H65FB
STMicroelectronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Collector Current (IC): 60 A; JESD-30 Code: R-PSFM-T3;
60 A
SINGLE
7 V
R-PSFM-T3
175 Cel
-55 Cel
58 W
THROUGH-HOLE
223 ns
51.1 ns
2 V
STGWT30H65FB
STGWT30H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 260W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 223ns and low VCEsat of 2V. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
COLLECTOR
260 W
STGP7NB60HD
STGP7NB60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 220ns.
14 A
600 V
5 V
TO-220AB
e3
80 W
Not Qualified
Insulated Gate BIP Transistors
MATTE TIN
MOTOR CONTROL
220 ns
63 ns
STGFW40H65FB
STGFW40H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat, 80A IC, and 62.5W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 202ns and high operating temperature range (-55 to 175 °C).
62.5 W
202 ns
52 ns
NGTB50N60FL2WG
Onsemi
NGTB50N60FL2WG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 417W Pd. It operates up to 175 °C making it ideal for high-power applications like motor drives and inverters.
100 A
417 W
Tin (Sn)
IXGM40N60A
IXYS Corporation
IXYS Corporation's IXGM40N60A is an N-CHANNEL IGBT with 600V VCE, 75A IC, and 3V VCEsat. Ideal for POWER CONTROL applications, it has a single configuration, 900ns toff, and 300ns ton. The METAL package with PIN/PEG terminals can handle up to 250W power dissipation at 150°C ambient temperature.
HIGH SPEED
TO-204AE
O-MBFM-P2
METAL
ROUND
250 W
BOTTOM
300 ns
3 V
CM150TX-24S1
Mitsubishi Electric
Mitsubishi Electric's CM150TX-24S1 IGBT is an N-channel transistor with 6 elements, ideal for motor control applications. With a max VCEsat of 2.25V and IC of 150A, it offers efficient power dissipation up to 935W. Operating b/w -40°C to 150°C, it features fast rise/fall times (tr/tf) of 200/300ns for precise control.
150 A
R-PUFM-X35
935 W
200 ns
TIN
1000 ns
STGY80H65DFB
STMicroelectronics' STGY80H65DFB is an N-CHANNEL IGBT with 650V VCEsat, 120A IC, and 469W Pd. Ideal for POWER CONTROL applications due to its fast turn-off time of 358ns and high operating temperature range (-55 °C to 175°C).
120 A
R-PSIP-T3
IN-LINE
469 W
358 ns
128 ns
IXSK35N120AU1
IXYS Corporation's IXSK35N120AU1 is an N-CHANNEL IGBT with 1200V VCE, 70A IC, and 4V VCEsat. Ideal for MOTOR CONTROL applications, it has a built-in diode, 1100ns toff, and can handle up to 300W power dissipation.
8 V
TO-264
300 W
1100 ns
230 ns
4 V
IXSH45N120
IXYS Corporation's IXSH45N120 is an N-CHANNEL IGBT transistor with 1200V VCE, 75A IC, and 3V VCEsat. Ideal for MOTOR CONTROL applications, it has a toff of 1650ns and ton of 330ns, housed in a PLASTIC/EPOXY package with FLANGE MOUNT style.
TO-247AD
330 ns
IXSN55N120A
IXYS Corporation's IXSN55N120A is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 140ns ton. Ideal for POWER CONTROL applications, it has a SINGLE configuration in a FLANGE MOUNT package with 4 terminals.
R-XUFM-X4
4
NICKEL
600 ns
140 ns
IXSH24N60A
IXYS Corporation's IXSH24N60A is an N-CHANNEL IGBT with 600V VCE, 48A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 150W and operates at up to 150°C. With fast switching times (ton:300ns, toff:925ns), it offers efficient performance in various power control systems.
48 A
500 ns
e1
150 W
TIN SILVER COPPER
925 ns
2.7 V
IXSH24N60AU1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 48 A; No. of Terminals: 3;
FAST
TO-247
IXSH45N100
IXYS Corporation's IXSH45N100 is an N-CHANNEL IGBT with 1000V VCEsat, 75A IC, and 300W power dissipation. Ideal for POWER CONTROL applications, it has a turn-off time of 2750ns and operates up to 150°C.
1000 V
1500 ns
2750 ns
STGB7NB60HDT4
STGB7NB60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its built-in diode, fast turn-off time of 220ns, and small outline package style.
TO-263AB
R-PSSO-G2
SMALL OUTLINE
YES
GULL WING
STGB10NB37LZ
STGB10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. It's designed for automotive ignition applications due to its built-in diode and resistor, small outline package style, and matte tin terminal finish.
VOLTAGE CLAMPING
20 A
375 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.4 V
245
125 W
Matte Tin (Sn) - annealed
30
AUTOMOTIVE IGNITION
17800 ns
860 ns
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