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Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.

Insulated Gate Bipolar Transistors (IGBT)

Available Parts 1,690

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGYA75H120DF2 by STMicroelectronics

STGYA75H120DF2

STMicroelectronics

STMicroelectronics' STGYA75H120DF2 is an N-CHANNEL IGBT with 1200V VCE, 150A IC, and 750W Pmax. Ideal for POWER CONTROL applications due to its low VCEsat of 2.6V and fast turn-off time of 406ns. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

COLLECTOR

150 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

750 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

406 ns

95 ns

2.6 V

FS75R12KT4B15BPSA1 by Infineon Technologies

FS75R12KT4B15BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 75 A; No. of Terminals: 28;

ISOLATED

75 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

R-XUFM-X28

6

28

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

385 W

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

490 ns

185 ns

2.15 V

LGD8201TH by Littelfuse

LGD8201TH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Turn On Time (ton): 10000 ns;

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

8000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

AEC-Q101

8000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18000 ns

14000 ns

10000 ns

7500 ns

IXYH85N120C4 by Littelfuse

IXYH85N120C4

Littelfuse

Littelfuse IXYH85N120C4 is an N-CHANNEL IGBT with 1200V VCEsat, 240A IC, and 1150W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 317ns and high operating temperature range (-55°C to 175°C). Package style is FLANGE MOUNT with RECTANGULAR shape.

COLLECTOR

240 A

1200 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1150 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

317 ns

95 ns

2.5 V

IXYX110N120C4 by Littelfuse

IXYX110N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 310 A; Package Shape: RECTANGULAR;

COLLECTOR

310 A

1200 V

SINGLE

6.5 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1360 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

357 ns

88 ns

2.4 V

IXYN110N120C4 by Littelfuse

IXYN110N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 220 A; No. of Elements: 1;

ISOLATED

220 A

1200 V

SINGLE

6.5 V

20 V

R-PUFM-X4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

830 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

357 ns

88 ns

2.4 V

IXYH55N120C4 by Littelfuse

IXYH55N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 140 A; Maximum Operating Temperature: 175 Cel;

COLLECTOR

140 A

1200 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

650 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

222 ns

70 ns

2.5 V

IXYK110N120B4 by Littelfuse

IXYK110N120B4

Littelfuse

Littelfuse IXYK110N120B4 is an N-CHANNEL IGBT transistor with 1200V VCE, 340A IC, and 2.1V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 1360W and operates b/w -55 to 175°C temperatures.

COLLECTOR

340 A

1200 V

SINGLE

6.5 V

20 V

TO-264AA

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1360 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

520 ns

95 ns

2.1 V

IXYK110N120C4 by Littelfuse

IXYK110N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 310 A; Terminal Position: SINGLE;

COLLECTOR

310 A

1200 V

SINGLE

6.5 V

20 V

TO-264AA

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1360 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

357 ns

88 ns

2.4 V

FS100R12KT4PB11BPSA1 by Infineon Technologies

FS100R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;

ISOLATED

100 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

6.4 V

20 V

R-XUFM-X25

6

25

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

515 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

490 ns

185 ns

2.1 V