Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
Add filters
All
Selected
6MS10017E41W36460BOSA1
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Position: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
ISOLATED
1700 V
COMPLEX
R-XXMA-X
6
150 Cel
UNSPECIFIED
RECTANGULAR
MICROELECTRONIC ASSEMBLY
NOT SPECIFIED
N-CHANNEL
NO
POWER CONTROL
SILICON
6MS16017P43W40382NOSA1
N-Channel; Minimum Operating Temperature: -25 Cel; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1700 V; Maximum Operating Temperature: 125 Cel;
125 Cel
-25 Cel
N-Channel
6MS16017P43W40383NOSA1
N-Channel; Maximum Operating Temperature: 125 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Minimum Operating Temperature: -25 Cel;
6MS24017P43W39872NOSA1
Infineon's 6MS24017P43W39872NOSA1 is an N-CHANNEL IGBT with 12 elements, max voltage of 1700V, and temp range -25 to 55 °C. Ideal for POWER CONTROL applications due to SILICON material and ISOLATED case connection in a RECTANGULAR package style.
12
55 Cel
6MS24017P43W39873NOSA1
Infineon Technologies' 6MS24017P43W39873NOSA1 is an N-CHANNEL IGBT with 12 elements, ideal for POWER CONTROL applications. With a max voltage of 1700V and operating temperature range from -25 to 55 °C, this SILICON-based transistor in RECTANGULAR package offers efficient performance in complex configurations.
6MS24017P43W41646NOSA1
6MS24017P43W41646NOSA1 by Infineon Technologies is an N-Channel IGBT with 12 elements. It has a max collector-emitter voltage of 1700V and operates b/w -25°C to 55°C. Ideal for power control applications, this surface-mount transistor features a silicon element in a rectangular package style.
YES
6MS30017E43W34404NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 18; Maximum Operating Temperature: 150 Cel;
18
6MS30017E43W40372NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UNSPECIFIED; Terminal Form: UNSPECIFIED;
6PS18012E4FG38393NWSA1
N-Channel; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V; Minimum Operating Temperature: -25 Cel;
1200 V
IFF2400P17AE4BPSA1
Infineon's IGBT, mfgpartno: IFF2400P17AE4BPSA1, features N-Channel polarity with VCEsat of 2.3V and max VCE of 1700V. Ideal for high-power applications in industries like automotive and renewable energy due to its SILICON material and -40 to 150 °C operating temperature range.
1
-40 Cel
2.3 V
IFF2400P17LE4BPSA1
N-Channel; Maximum Collector-Emitter Voltage: 1700 V; Maximum VCEsat: 2.3 V; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; Case Connection: ISOLATED;
FS820R08A6P2BBPSA1
Infineon's FS820R08A6P2BBPSA1 is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED, CENTER TAP configuration. It has 6 elements, 820 A IC, and 714 W power dissipation for POWER CONTROL applications. With VCEsat of 1.35V and toff of 1110ns, it operates b/w -40 to 150 °C effectively.
820 A
750 V
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.5 V
20 V
R-XUFM-X33
33
FLANGE MOUNT
714 W
UPPER
1110 ns
380 ns
1.35 V
AFGHL50T65SQ
Onsemi
AFGHL50T65SQ by Onsemi is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC, ideal for POWER CONTROL applications. It has a max power dissipation of 268W, operating temperature range of -55 to 175 °C, and meets AEC-Q101 standard.
COLLECTOR
80 A
650 V
SINGLE
6.4 V
TO-247
R-PSFM-T3
e3
3
175 Cel
-55 Cel
PLASTIC/EPOXY
268 W
AEC-Q101
Matte Tin (Sn) - annealed
THROUGH-HOLE
2.1 V
RGS60TS65DHRC11
ROHM
ROHM RGS60TS65DHRC11 is an N-CHANNEL IGBT with 650V VCEsat, 56A IC, and 223W power dissipation. Ideal for power control applications due to its fast turn-off time of 290ns and built-in diode. AEC-Q101 certified for automotive use in harsh environments.
56 A
SINGLE WITH BUILT-IN DIODE
7 V
30 V
223 W
TIN
290 ns
46 ns
SIGC28T60EX1SA4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 600 V; Reference Standard: IEC-62258-3;
600 V
R-XUUC-N3
UNCASED CHIP
IEC-62258-3
NO LEAD
1.85 V
SIGC84T120R3LEX1SA7
N-Channel; Maximum VCEsat: 2.1 V; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum Operating Temperature: -55 Cel;
FGHL50T65SQDT
FGHL50T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 100A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate b/w -55 to 175 °C temperature range.
RC-IGBT
100 A
159 ns
40.4 ns
AFGB30T65SQDN
AFGB30T65SQDN by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 60A, ideal for power control applications. Featuring a single configuration with built-in diode, it has a package style of small outline and can operate b/w -55 to 175 °C. Suitable for surface mount assembly, this transistor offers fast turn-off time (toff) of 78.7ns and turn-on time (ton) of 33.6ns, meeting AEC-Q101 standards.
60 A
6 V
TO-263
R-PSSO-G2
2
SMALL OUTLINE
260
220 W
MATTE TIN
GULL WING
30
78.7 ns
33.6 ns
FGAF40S65AQ
FGAF40S65AQ by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 94W power dissipation. Ideal for general purpose switching applications, it features a built-in diode, 30.3ns turn on time, and -55 to 175°C operating temperature range.
6.6 V
94 W
GENERAL PURPOSE SWITCHING
90.8 ns
30.3 ns
NXH160T120L2Q1SG
NXH160T120L2Q1SG by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.5V, and max power dissipation of 280W. Ideal for power control applications, it has a max VCE of 1200V and max IC of 140A. Operating temp ranges from -40 to 150 °C making it suitable for various industrial uses.
140 A
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR
6.9 V
R-XUFM-X30
4
280 W
2.5 V
DGTD65T50S1PT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel;
6.2 V
375 W
399 ns
117 ns
2.4 V
DGTD65T60S2PT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 428 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Voltage: 20 V;
HIGH SPEED SWITCHING
428 W
187 ns
83 ns
FGH60T65SQD-F155
FGH60T65SQD-F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175°C and collector-emitter voltage of 650V.
120 A
TO-247AB
333 W
126.2 ns
36.8 ns
FGH40T120SQDNL4
FGH40T120SQDNL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.95V and a max collector-emitter voltage of 1200V. Ideal for power control applications, it has a nominal turn off time of 372ns and can handle a max collector current of 160A.
160 A
R-PSFM-T4
454 W
372 ns
80 ns
1.95 V
SNXH100M95H3Q2F2PG
SNXH100M95H3Q2F2PG by Onsemi is an N-CHANNEL IGBT with 950V VCEsat, 263A IC, and 457W power dissipation. Ideal for power control applications due to its series connected configuration with built-in diode and thermistor. Offers fast switching with rise time of 77ns and fall time of 264ns.
263 A
950 V
SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
264 ns
5.7 V
R-XUFM-X40
40
457 W
77 ns
1665 ns
306 ns
2.25 V
FPF2G75FH07BP
FPF2G75FH07BP by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.2V, and IC of 75A. Ideal for POWER CONTROL applications, it has a toff of 462ns and ton of 124ns. Operating b/w -40 °C to 150°C, it offers a max VCE of 650V and Pabs of 236W in a RECTANGULAR package style.
LOW CONDUCTION LOSS
75 A
6.8 V
25 V
R-XUFM-X32
32
236 W
462 ns
124 ns
2.2 V
DGTD120T40S1PT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;
357 W
387 ns
132 ns
DGTD120T25S1PT
DGTD120T25S1PT by Diodes Inc. is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 50A, and Ptot of 348W. Ideal for power control applications, it features a built-in diode in a rectangular package with through-hole terminals. Operating b/w -40 to 175°C, it has a VCE max of 1200V and ton/toff times of 110/367ns.
50 A
348 W
367 ns
110 ns
NXH35C120L2C2S1G
NXH35C120L2C2S1G by Onsemi is an IGBT with 6 elements, built-in diode, and thermistor in a plastic/epoxy package. It has a max VCEsat of 2.4V and can handle up to 35A collector current. Ideal for power control applications requiring N-channel configuration and three-phase diode bridge setup.
35 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
R-PDIP-T26
26
IN-LINE
DUAL
485 ns
240 ns
NXH450B100H4Q2F2PG
NXH450B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Nominal Turn Off Time of 224ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 234W, this IGBT operates in temperatures ranging from -40°C to 150°C.
101 A
1000 V
3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X56
56
234 W
224 ns
42 ns
NXH450B100H4Q2F2SG
NXH450B100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Max Collector-Emitter Voltage of 1000V, making it ideal for POWER CONTROL applications requiring high power dissipation up to 234W. With a Nominal Turn Off Time of 224ns, this RECTANGULAR package IGBT operates in temperatures ranging from -40 °C to 150°C.
NXH350N100H4Q2F2SG
NXH350N100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 2 banks, series connected, and built-in diode. It has a max VCEsat of 1.8V and can handle a collector-emitter voltage of 1000V. Ideal for power control applications due to its high power dissipation capability of 592W.
329 A
2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X42
42
592 W
572.5 ns
114 ns
1.8 V
NXH200T120H3Q2F2SG
NXH200T120H3Q2F2SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat and 256A IC. Ideal for POWER CONTROL applications, it has a tr of 102ns, tf of 99ns, and toff of 1096ns. This COMPLEX transistor operates b/w -40 °C to 150°C with a max power dissipation of 679W in a RECTANGULAR package style.
256 A
99 ns
679 W
102 ns
1096 ns
373 ns
NXH35C120L2C2ESG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Package Body Material: UNSPECIFIED; Nominal Turn Off Time (toff): 485 ns;
R-XDIP-T26
NXH50C120L2C2ESG
NXH50C120L2C2ESG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 616ns toff. Ideal for power control applications requiring a BRIDGE configuration with built-in diode and thermistor. Package: PLASTIC/EPOXY, Terminals: THROUGH-HOLE, Temp Range: -40°C to 150°C.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR
7
616 ns
248 ns
NCG225L75NF8M1
NCG225L75NF8M1 by Onsemi is an N-CHANNEL IGBT transistor for MOTOR CONTROL applications. It features a Max VCEsat of 1.75V, Nominal Turn Off Time of 424ns, and Max Collector-Emitter Voltage of 750V. This SQUARE-shaped chip operates b/w -40 to 175 °C with a Gate-Emitter Threshold Voltage of 7.2V, making it suitable for high-power motor control systems.
7.2 V
S-XUUC-N2
SQUARE
MOTOR CONTROL
424 ns
468 ns
1.75 V
NXH100T120L3Q0S1NG
NXH100T120L3Q0S1NG by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.3V, and IC of 100A. Ideal for POWER CONTROL applications, it has a toff of 412ns and ton of 93ns. Operating temperature ranges from -40 °C to 175°C making it suitable for high-power systems.
R-XUFM-X20
20
328 W
412 ns
93 ns
NXH25C120L2C2SG
NXH25C120L2C2SG by Onsemi is an IGBT transistor with 1200V VCEsat, 25A IC, and 320ns toff. Ideal for motor control applications due to its N-CHANNEL polarity and BRIDGE configuration with built-in diode. Operates in temperatures from -40 °C to 150°C, making it suitable for various industrial settings.
25 A
320 ns
128 ns
SNXH75M65L3F2STG
SNXH75M65L3F2STG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 75A IC, and 236W power dissipation. Ideal for general purpose switching applications due to its built-in diode and thermistor. Features include a fast turn-off time of 432ns and a max operating temperature of 150 °C.
LOW SWITCHING LOSSES
R-PUFM-P32
PIN/PEG
432 ns
129 ns
STGWA50H65DFB2
STMicroelectronics
STGWA50H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 86A, and Pmax of 272W. Ideal for power control applications due to its fast turn-off time (toff) of 225ns and turn-on time (ton) of 41ns. Package style is flange mount with a max operating temperature of 175°C.
86 A
272 W
225 ns
41 ns
2 V
STGWA50HP65FB2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 272 W; Maximum Collector Current (IC): 86 A; Minimum Operating Temperature: -55 Cel;
STGB50H65FB2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Collector Current (IC): 86 A; Case Connection: COLLECTOR;
TO-263AB
STGWA75H65DFB2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 115 A; Maximum Gate-Emitter Voltage: 20 V;
115 A
210 ns
44 ns
FGH75T65UPD-F155
FGH75T65UPD-F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max IC of 150A. Ideal for POWER CONTROL applications, it has a package style of FLANGE MOUNT and can operate in temperatures ranging from -55 to 175 °C.
150 A
33 ns
7.5 V
56 ns
249 ns
197 ns
98 ns
87 ns
LGD15N41ATI
Littelfuse
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 15 A; Package Body Material: PLASTIC/EPOXY;
15 A
440 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
15000 ns
1.9 V
15 V
TO-252
107 W
7000 ns
AUTOMOTIVE IGNITION
25000 ns
15500 ns
17000 ns
9500 ns
LGB15N41ATI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 15 A; Case Connection: COLLECTOR;
AFGY160T65SPD-B4
AFGY160T65SPD-B4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.05V and a max IC of 240A. Ideal for power control applications, it has a max operating temperature of 175 °C and a collector-emitter voltage of 650V.
240 A
6.3 V
882 W
2.05 V
LGD18N45TH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; Maximum Turn On Time (ton): 10400 ns;
18 A
500 V
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
18 V
115 W
9000 ns
19000 ns
5400 ns
10400 ns
2920 ns
2.85 V
© 2023 All rights reserved
