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IFF2400P17AE4BPSA1

Infineon Technologies

IFF2400P17AE4BPSA1 by Infineon Technologies

Infineon's IGBT, mfgpartno: IFF2400P17AE4BPSA1, features N-Channel polarity with VCEsat of 2.3V and max VCE of 1700V. Ideal for high-power applications in industries like automotive and renewable energy due to its SILICON material and -40 to 150 °C operating temperature range.

Median Price

$2,598.685

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4 parts In-Stock

1+ parts

$2,165.530

100+ parts

$2,035.600

1k+ parts

$1,905.670

10k+ parts

-

4

$2,165.530

$2,035.600

$1,905.670

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Mouser Electronics

USA . 2 parts In-Stock

1+ parts

$2,575.810

100+ parts

$2,489.110

1k+ parts

$2,488.540

10k+ parts

-

2

$2,575.810

$2,489.110

$2,488.540

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DigiKey

USA . 4 parts In-Stock

1+ parts

$2,621.560

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-

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4

$2,621.560

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Verical

USA . 3 parts In-Stock

1+ parts

$2,706.912

100+ parts

$2,544.500

1k+ parts

$2,382.088

10k+ parts

-

3

$2,706.912

$2,544.500

$2,382.088

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 655 parts In-Stock

1+ parts

$2,394.694

100+ parts

-

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-

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655

$2,394.694

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Vyrian

USA . 5,533 parts In-Stock

1+ parts

-

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5,533

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 25,805 parts In-Stock

1+ parts

$1.158

100+ parts

$1.112

1k+ parts

$1.065

10k+ parts

-

25,805

$1.158

$1.112

$1.065

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Continental Prestige Electronics

USA . 3 parts In-Stock

1+ parts

$1,644.000

100+ parts

-

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3

$1,644.000

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Corphita

USA . 19 parts In-Stock

1+ parts

$2,268.657

100+ parts

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19

$2,268.657

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Microchip USA

USA . 221 parts In-Stock

1+ parts

$2,420.210

100+ parts

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221

$2,420.210

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Overview

Upgrade your electronics with the top-notch IFF2400P17AE4BPSA1 Insulated Gate Bipolar Transistor by Infineon Technologies. Known for their exceptional quality and reliability, Infineon products are trusted by industry professionals worldwide. This N-Channel transistor boasts a maximum VCEsat of 2.3V and can operate at temperatures up to 150°C, making it versatile for various applications. Whether you're designing power supplies, motor control systems, or inverters, this IGBT offers unparalleled performance and efficiency. Trust Infineon for cutting-edge technology that delivers value and peace of mind.

Feature Benefit Bullets

Polarity or Channel Type: N-Channel

N-channel IGBTs typically have lower losses and better efficiency compared to P-channel, making them a good choice for high-power applications.

Maximum VCEsat: 2.3 V

Low VCEsat means lower voltage drop across the collector-emitter path, resulting in reduced power dissipation and improved efficiency.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT can withstand elevated temperatures without compromising performance, making it suitable for a wide range of industrial applications.

Maximum Collector-Emitter Voltage: 1700 V

The high maximum collector-emitter voltage rating allows this IGBT to handle high voltage levels, making it suitable for power electronics applications.

Transistor Element Material: SILICON

Silicon-based IGBTs offer high performance and reliability, making them a preferred choice for power electronic systems.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable operation even in cold environments, making this IGBT suitable for a wide range of operating conditions.

Case Connection: ISOLATED

Isolated case connection helps in preventing electrical interference and ensures safe operation in high voltage applications, making this IGBT suitable for power electronic systems where isolation is necessary.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IFF2400P17AE4BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1700 V

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Polarity or Channel Type:

Transistor Element Material:

SILICON

Maximum VCEsat:

2.3 V

Trade Compliance

IFF2400P17AE4BPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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