Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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AIKW40N65DH5XKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 175 Cel;
40 A
600 V
SINGLE WITH BUILT-IN DIODE
5.7 V
20 V
TO-247
R-PSFM-T3
e3
1
3
175 Cel
-40 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
166 W
AEC-Q101
NO
TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
299 ns
36 ns
2.05 V
F475R07W2H3B51BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER;
ISOLATED
75 A
650 V
COMPLEX
6.5 V
R-XUFM-X18
4
18
150 Cel
UNSPECIFIED
NOT SPECIFIED
250 W
UL APPROVED
UPPER
300 ns
45 ns
1.55 V
FS600R07A2E3B32BOSA1
Infineon's FS600R07A2E3B32BOSA1 is an N-CHANNEL IGBT with 6 elements, 33 terminals, and max VCEsat of 1.6V. Ideal for power control applications, it features a max collector-emitter voltage of 650V and can handle up to 530A collector current efficiently. With a package style of FLANGE MOUNT and operating temperature range from -40°C to 150°C, this IGBT offers reliable performance in various power systems.
530 A
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X33
6
33
1250 W
540 ns
190 ns
1.6 V
IKA10N65ET6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 15 A; Package Shape: RECTANGULAR;
15 A
6.4 V
TO-220AB
40 W
152 ns
48 ns
1.9 V
IKFW40N60DH3EXKSA1
IKFW40N60DH3EXKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 34A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a turn-off time of 184ns and operates b/w -40 to 175°C.
34 A
111 W
184 ns
50 ns
2.7 V
IKFW50N60DH3EXKSA1
IKFW50N60DH3EXKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 130W power dissipation. Ideal for power control applications, it features a built-in diode, 220ns turn-off time, and -40 to 175°C operating temperature range.
130 W
220 ns
58 ns
IKFW60N60DH3EXKSA1
IKFW60N60DH3EXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.7V and a max collector current (IC) of 53A. It is commonly used for power control applications due to its high power dissipation of 141W and fast nominal turn on time (ton) of 60ns.
53 A
141 W
219 ns
60 ns
VS-CPV364M4FPBF
Vishay Intertechnology
VS-CPV364M4FPBF by Vishay Intertechnology is an N-CHANNEL IGBT with 600V VCEsat, 27A IC, and 63W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration, 240ns fall time, and -40 to 150°C operating temperature range.
27 A
240 ns
6 V
R-PSFM-T13
13
63 W
UL RECOGNIZED
570 ns
380 ns
1.5 V
NGTB40N65IHRWG
Onsemi
NGTB40N65IHRWG by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.7V and a max IC of 80A, ideal for power control applications. It has a package style of FLANGE MOUNT, can handle up to 650V and dissipate 405W, making it suitable for high-power operations in various industries.
LOW CONDUCTION LOSS
80 A
TO-247AD
405 W
316 ns
1.7 V
A1P25S12M3-F
STMicroelectronics
A1P25S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, 197W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.
25 A
1200 V
7 V
R-XUFM-X22
22
197 W
326 ns
139 ns
2.45 V
A1P35S12M3-F
A1P35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.
35 A
398 ns
142 ns
STGWA30H65DFB
STGWA30H65DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.
60 A
-55 Cel
260 W
223 ns
62.8 ns
2 V
2PS12017E44G35911NOSA1
N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1700 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 1060 ns; Nominal Turn Off Time (toff): 2380 ns;
1700 A
1700 V
N-Channel
6250 W
2380 ns
1060 ns
2.2 V
AIGW40N65H5XKSA1
AIGW40N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT for POWER CONTROL applications. It has a max VCEsat of 2.1V, collector-emitter voltage of 650V, and collector current of 74A. With a turn-off time of 203ns and power dissipation of 250W, it operates in temperatures ranging from -40 to 175°C.
COLLECTOR
74 A
4.8 V
203 ns
31 ns
2.1 V
AIHD04N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Reference Standard: AEC-Q101;
8 A
TO-252
R-PSSO-G2
2
SMALL OUTLINE
75 W
YES
GULL WING
342 ns
20 ns
AIHD04N60RFATMA1
216 ns
18 ns
2.5 V
AIHD06N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-252;
12 A
100 W
335 ns
22 ns
AIHD06N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Minimum Operating Temperature: -40 Cel;
149 ns
17 ns
AIHD10N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;
20 A
150 W
428 ns
24 ns
AIHD10N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Minimum Operating Temperature: -40 Cel;
198 ns
27 ns
AIHD15N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; No. of Elements: 1;
30 A
260
430 ns
26 ns
AIKQ100N60CTXKSA1
AIKQ100N60CTXKSA1 by Infineon is an N-CHANNEL IGBT with a VCEsat of 2V and IC of 160A. Ideal for power control applications, it has a toff of 393ns and ton of 83ns. With a max operating temperature of 175°C, it's designed for high-power dissipation up to 714W in automotive environments.
160 A
714 W
393 ns
83 ns
AIKQ120N60CTXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 833 W; Maximum Collector Current (IC): 160 A; Nominal Turn On Time (ton): 84 ns;
833 W
84 ns
AIKW20N60CTXKSA1
Infineon's AIKW20N60CTXKSA1 is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 2.05V VCE. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175°C.
AIKW30N60CTXKSA1
Infineon's AIKW30N60CTXKSA1 is an N-CHANNEL IGBT with VCEsat of 2.05V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 388ns, ton of 50ns, and can handle up to 187W power dissipation. Suitable for FLANGE MOUNT installations with a max temp rating of 175°C.
187 W
388 ns
AIKW50N60CTXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 333 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;
333 W
396 ns
AIKW50N65DF5XKSA1
Infineon's AIKW50N65DF5XKSA1 is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 270W power dissipation. Ideal for power control applications, it features a built-in diode, 196ns turn-off time, and operates b/w -40 to 175°C.
270 W
196 ns
35 ns
AIKW50N65DH5XKSA1
Infineon's AIKW50N65DH5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 2.1V VCEsat. Ideal for POWER CONTROL applications, it features a built-in diode, 196ns toff, and 35ns ton for efficient switching in high-power systems. AEC-Q101 certified for automotive use.
F3L225R07W2H3PB63BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 110 ns; Transistor Application: POWER CONTROL; Case Connection: ISOLATED;
6.45 V
R-XUFM-X32
32
110 ns
170 ns
1.65 V
F3L25R12W1T4B27BOMA1
Infineon's F3L25R12W1T4B27BOMA1 IGBT features 1200V VCEsat, 375ns toff, and 215W power dissipation. Ideal for power control applications with N-CHANNEL polarity, it offers fast switching and high current handling capabilities in a complex configuration.
45 A
R-XUFM-X19
19
215 W
375 ns
54 ns
2.25 V
F4200R17N3E4BPSA1
N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Terminal Position: UPPER; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1700 V;
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.25 V
R-XUFM-X30
30
1160 ns
270 ns
2.3 V
F575R06KE3B5BOSA1
N-Channel; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum VCEsat: 1.9 V; Package Body Material: UNSPECIFIED;
R-XUFM-X35
35
FF1500R12IE5BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 1200 V;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.35 V
R-PUFM-X14
14
720 ns
460 ns
2.15 V
FF1500R17IP5BPSA1
FF1500R17IP5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max VCEsat of 2.2V and can operate at temperatures up to 175°C. Ideal for power control applications due to its high collector-emitter voltage of 1700V and fast turn-off time of 970ns.
970 ns
480 ns
IRGIB4640DPBF
N-Channel; Maximum Collector Current (IC): 65 A; Transistor Element Material: SILICON; Maximum Gate-Emitter Voltage: 20 V; Nominal Turn On Time (ton): 64 ns; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
65 A
119 ns
64 ns
CM225DX-24T
Mitsubishi Electric
Mitsubishi Electric's CM225DX-24T is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2V and can handle up to 225A IC for power control applications. With a package style of FLANGE MOUNT, it operates b/w -40 to 150 °C with UL recognition.
225 A
400 ns
6.6 V
R-PUFM-X11
11
1470 W
200 ns
1200 ns
800 ns
A2P75S12M3-F
A2P75S12M3-F by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation capability and wide operating temperature range (-40°C to 150°C).
454.4 W
517 ns
235 ns
A2P75S12M3
A2P75S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.3V, supports up to 75A collector current, and operates at temperatures from -40 °C to 150 °C. Its bridge configuration with 6 elements ensures efficient performance.
BRIDGE, 6 ELEMENTS
454.5 W
MOTOR CONTROL
AIHD03N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 6.5 A; Maximum VCEsat: 2.5 V;
6.5 A
53.6 W
265 ns
FF400R07A01E3S6XKSA2
FF400R07A01E3S6XKSA2 by Infineon is an N-Channel IGBT with a max VCEsat of 6.5V, IC of 800A, and Pdiss of 1500W. Ideal for high-power applications like industrial motor drives due to its high voltage and current capabilities.
800 A
700 V
1500 W
530 ns
140 ns
FS200R07A5E3S6BPSA1
N-Channel; Maximum Power Dissipation (Abs): 630 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 440 ns; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
705 V
630 W
440 ns
FS400R07A1E3S7BOMA1
Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.
500 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X25
25
FS400R07A3E3BOMA1
FS400R07A3E3BOMA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 1.7V and can handle up to 500A of collector current. Ideal for power control applications, it offers fast turn-off time (430ns) and high power dissipation (1250W).
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC
R-XUFM-X29
29
AIGW40N65F5XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Terminal Finish: TIN;
30 ns
AIKW40N65DF5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Transistor Application: POWER CONTROL;
IKFW50N60DH3XKSA1
IKFW50N60DH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 53A, and Pmax of 145W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 268ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT, Terminal finish: TIN, Case connection: ISOLATED.
145 W
268 ns
IKFW60N60EH3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 64 A; Transistor Application: POWER CONTROL;
64 A
164 W
282 ns
63 ns
IKFW90N60EH3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 178 W; Maximum Collector Current (IC): 77 A; Nominal Turn On Time (ton): 76 ns;
77 A
178 W
312 ns
76 ns
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