Loading...

AIKQ100N60CTXKSA1

Infineon Technologies

AIKQ100N60CTXKSA1 by Infineon Technologies

AIKQ100N60CTXKSA1 by Infineon is an N-CHANNEL IGBT with a VCEsat of 2V and IC of 160A. Ideal for power control applications, it has a toff of 393ns and ton of 83ns. With a max operating temperature of 175°C, it's designed for high-power dissipation up to 714W in automotive environments.

Median Price

$11.412

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3 parts In-Stock

1+ parts

$15.830

100+ parts

-

1k+ parts

-

10k+ parts

-

3

$15.830

-

-

-

Rochester

USA . 1,150 parts In-Stock

1+ parts

-

100+ parts

$9.130

1k+ parts

$8.170

10k+ parts

$7.690

1,150

-

$9.130

$8.170

$7.690

Verical

USA . 960 parts In-Stock

1+ parts

-

100+ parts

$11.412

1k+ parts

$10.213

10k+ parts

$9.613

960

-

$11.412

$10.213

$9.613

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 731 parts In-Stock

1+ parts

$8.379

100+ parts

-

1k+ parts

-

10k+ parts

-

731

$8.379

-

-

-

Vyrian

USA . 4,283 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,283

-

-

-

-

Prism Electronics

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 446 parts In-Stock

1+ parts

$0.228

100+ parts

-

1k+ parts

-

10k+ parts

$0.219

446

$0.228

-

-

$0.219

Northwest PG Solutions

USA . 1,548 parts In-Stock

1+ parts

$0.251

100+ parts

-

1k+ parts

-

10k+ parts

$0.221

1,548

$0.251

-

-

$0.221

Corohmni

South Africa . 135 parts In-Stock

1+ parts

$0.770

100+ parts

-

1k+ parts

-

10k+ parts

-

135

$0.770

-

-

-

Modulus Dynamics

Lithuania . 14,396 parts In-Stock

1+ parts

$1.067

100+ parts

$1.024

1k+ parts

$0.982

10k+ parts

-

14,396

$1.067

$1.024

$0.982

-

Advanced Electronics

New Zealand . 87 parts In-Stock

1+ parts

$2.059

100+ parts

$1.874

1k+ parts

$1.688

10k+ parts

-

87

$2.059

$1.874

$1.688

-

Corphita

USA . 148 parts In-Stock

1+ parts

$7.938

100+ parts

-

1k+ parts

-

10k+ parts

-

148

$7.938

-

-

-

Microchip USA

USA . 8,000 parts In-Stock

1+ parts

$42.952

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

$42.952

-

-

-

Overview

Unleash the power of Infineon Technologies with the AIKQ100N60CTXKSA1 Insulated Gate Bipolar Transistor. Designed for superior performance in power control applications, this N-channel transistor offers a built-in diode and a maximum collector-emitter voltage of 600V. With a nominal turn-off time of 393ns and a maximum VCEsat of only 2V, this transistor delivers efficient power management while ensuring reliability. Trust in Infineon's reputation for quality and innovation and experience the benefits of this high-performance component in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and long-term performance.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower on-state resistance, allowing for efficient power control and minimal heat generation.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and provides protection against reverse current flow, enhancing overall system reliability.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimized performance and efficiency.

Maximum VCEsat: 2 V

Low VCEsat results in minimal energy loss and improved power efficiency during operation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic systems.

Nominal Turn Off Time (toff): 393 ns

Fast turn-off time ensures precise control and switching capabilities in power control applications.

Maximum Power Dissipation (Abs): 714 W

High maximum power dissipation capability allows for handling higher power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides secure installation and efficient heat dissipation, enhancing overall system performance.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High VCE voltage rating allows for safe operation in high voltage applications.

Transistor Element Material: SILICON

Silicon material offers excellent performance characteristics and reliability for the transistor element.

Maximum Gate-Emitter Voltage: 20 V

Allows for safe and reliable operation within specified voltage limits.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures operability in extreme cold conditions.

Maximum Collector Current (IC): 160 A

High collector current rating allows for handling high power loads efficiently.

Maximum Gate-Emitter Threshold Voltage: 5.7 V

Threshold voltage ensures proper gate control and switching characteristics of the IGBT.

Terminal Finish: TIN

Tin finish provides good conductivity and corrosion resistance for the terminal connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in electronic systems.

Nominal Turn On Time (ton): 83 ns

Fast turn-on time allows for quick response and high-speed switching capabilities.

Reference Standard: AEC-Q101

Compliance with automotive quality standard ensures high reliability and durability for automotive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) AIKQ100N60CTXKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

393 ns

Nominal Turn On Time (ton):

83 ns

Maximum VCEsat:

2 V

Trade Compliance

AIKQ100N60CTXKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6