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AIKW50N65DH5XKSA1

Infineon Technologies

AIKW50N65DH5XKSA1 by Infineon Technologies

Infineon's AIKW50N65DH5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 2.1V VCEsat. Ideal for POWER CONTROL applications, it features a built-in diode, 196ns toff, and 35ns ton for efficient switching in high-power systems. AEC-Q101 certified for automotive use.

Median Price

$5.730

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 244 parts In-Stock

1+ parts

$5.730

100+ parts

$3.760

1k+ parts

-

10k+ parts

-

244

$5.730

$3.760

-

-

DigiKey

USA . 210 parts In-Stock

1+ parts

$5.730

100+ parts

$3.996

1k+ parts

$3.645

10k+ parts

-

210

$5.730

$3.996

$3.645

-

Element14

Singapore . 147 parts In-Stock

1+ parts

$10.280

100+ parts

$5.825

1k+ parts

$5.714

10k+ parts

-

147

$10.280

$5.825

$5.714

-

Farnell

UK . 147 parts In-Stock

1+ parts

$10.581

100+ parts

$5.587

1k+ parts

$5.474

10k+ parts

-

147

$10.581

$5.587

$5.474

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Verical

USA . 210 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.595

10k+ parts

$3.943

210

-

-

$4.595

$3.943

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 702 parts In-Stock

1+ parts

$9.272

100+ parts

-

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702

$9.272

-

-

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Vyrian

USA . 5,913 parts In-Stock

1+ parts

-

100+ parts

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5,913

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 9,080 parts In-Stock

1+ parts

$1.671

100+ parts

$1.604

1k+ parts

$1.537

10k+ parts

-

9,080

$1.671

$1.604

$1.537

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Continental Prestige Electronics

USA . 438 parts In-Stock

1+ parts

$6.500

100+ parts

$4.020

1k+ parts

-

10k+ parts

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438

$6.500

$4.020

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Ampacity Inc.

Singapore . 57 parts In-Stock

1+ parts

$8.300

100+ parts

-

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-

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57

$8.300

-

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Corphita

USA . 793 parts In-Stock

1+ parts

$8.784

100+ parts

-

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793

$8.784

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Microchip USA

USA . 146 parts In-Stock

1+ parts

$31.108

100+ parts

-

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146

$31.108

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Robosynatics

Brazil . 950 parts In-Stock

1+ parts

-

100+ parts

$0.656

1k+ parts

$0.607

10k+ parts

$0.607

950

-

$0.656

$0.607

$0.607

Lucentia Tech

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$0.656

1k+ parts

$0.607

10k+ parts

$0.607

950

-

$0.656

$0.607

$0.607

Native Components

USA . 860 parts In-Stock

1+ parts

-

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860

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Northwest PG Solutions

USA . 750 parts In-Stock

1+ parts

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750

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Perfect Parts

USA . 2 parts In-Stock

1+ parts

-

100+ parts

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2

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Overview

Unlock the power of advanced technology with the Infineon Technologies AIKW50N65DH5XKSA1 Insulated Gate Bipolar Transistor. Manufactured by a leader in the industry, this N-CHANNEL transistor offers exceptional performance in power control applications. With a maximum collector-emitter voltage of 650V and a nominal turn-off time of 196ns, this transistor provides reliable and efficient operation. Whether you're looking to optimize your power management system or enhance your electronic devices, the AIKW50N65DH5XKSA1 delivers superior quality and unmatched value for all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product suitable for various environmental conditions.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities, particularly in high-voltage applications.

Maximum VCEsat: 2.1 V

Low VCEsat ensures minimal power losses and high efficiency during operation.

Maximum Power Dissipation (Abs): 270 W

High power dissipation capability allows for reliable performance in demanding power control applications.

Maximum Operating Temperature: 175 °C

The high operating temperature range ensures the product can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 650 V

The high maximum voltage rating enables the product to handle high voltage levels safely and effectively.

Maximum Gate-Emitter Voltage: 20 V

The gate-emitter voltage rating ensures compatibility with various control systems and enhances the product's versatility.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) AIKW50N65DH5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

4.8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

196 ns

Nominal Turn On Time (ton):

35 ns

Maximum VCEsat:

2.1 V

Trade Compliance

AIKW50N65DH5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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