Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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FD1000R33HL3KB60BPSA1
Infineon Technologies
N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 1050 ns; Maximum Operating Temperature: 150 Cel;
ISOLATED
3300 V
6.4 V
20 V
150 Cel
-40 Cel
N-Channel
11500 W
SILICON
4700 ns
1050 ns
2.85 V
FGD2736G3-F085V
Onsemi
Onsemi's FGD2736G3-F085V is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.65V, collector current of 37.5A, and operating temperature range from -40 to 175 °C. This surface-mount transistor has a package style of small outline and meets AEC-Q101 standards.
37.5 A
330 V
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
15000 ns
2.2 V
10 V
R-PSSO-G2
e3
1
2
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
150 W
AEC-Q101
7000 ns
YES
Matte Tin (Sn) - annealed
GULL WING
SINGLE
30
AUTOMOTIVE IGNITION
30000 ns
6300 ns
11000 ns
3900 ns
1.65 V
FZ1000R33HE3B60BPSA1
N-Channel; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Collector-Emitter Voltage: 3300 V; Case Connection: ISOLATED; Maximum Gate-Emitter Voltage: 20 V;
3550 ns
1150 ns
3.1 V
FZ1500R33HE3B60BPSA1
N-Channel; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Nominal Turn Off Time (toff): 3550 ns; Transistor Element Material: SILICON; Case Connection: ISOLATED;
FZ1500R33HL3B60BPSA1
N-Channel; Maximum Power Dissipation (Abs): 17000 W; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Nominal Turn Off Time (toff): 4700 ns; Nominal Turn On Time (ton): 1050 ns; Maximum VCEsat: 2.85 V;
17000 W
FGD3N60LSDTM-T
FGD3N60LSDTM-T by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.5V and a max IC of 6A. Ideal for MOTOR CONTROL applications, it has a turn-off time of 1420ns and operates at temperatures ranging from -55 to 150 °C.
LOW CONDUCTION LOSS
COLLECTOR
6 A
600 V
SINGLE WITH BUILT-IN DIODE
5 V
25 V
TO-252AA
-55 Cel
40 W
MOTOR CONTROL
1420 ns
85 ns
1.5 V
IXGA20N120A3-TRL
IXYS Corporation
IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.
40 A
1200 V
TO-263AA
180 W
POWER CONTROL
1530 ns
66 ns
2.5 V
IXGA30N120B3-TRL
IXGA30N120B3-TRL by IXYS is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 300W power dissipation. Ideal for power control applications, it has a fast turn-off time of 331ns and low VCEsat of 3.5V. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package.
60 A
380 ns
TO-263AB
300 W
580 ns
331 ns
53 ns
3.5 V
IXGT6N170AHV-TRL
IXGT6N170AHV-TRL by IXYS Corp is an N-CHANNEL IGBT with VCEsat of 7V, IC of 6A, and Pmax of 75W. Ideal for POWER CONTROL applications, it operates b/w -55 to 150 °C and features a fast turn-off time of 271ns.
1700 V
TO-268AA
75 W
271 ns
91 ns
7 V
IXYY8N90C3-TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V;
20 A
900 V
6 V
125 W
238 ns
39 ns
3 V
FGY75T95LQDT
FGY75T95LQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.69V and a max IC of 150A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate b/w -55 to 175 °C temperature range.
FAST SWITCHING
150 A
950 V
TO-247
R-PSFM-T3
3
FLANGE MOUNT
453 W
NO
THROUGH-HOLE
666 ns
102 ns
1.69 V
FGY75T95SQDT
FGY75T95SQDT by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.11V, IC of 150A, and Pd of 434W. Ideal for POWER CONTROL applications due to its high voltage rating (VCEmax: 950V) and fast switching times (ton: 89.6ns, toff: 198.8ns). Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
RC-IGBT
434 W
198.8 ns
89.6 ns
2.11 V
IGA03N120H2XKSA1
Infineon's IGA03N120H2XKSA1 is an N-Channel IGBT with 1200V VCE, 310ns toff, and 14.4ns ton. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
3.9 V
TIN
310 ns
14.4 ns
IGC41T120T8QX7SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: POWER CONTROL; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 175 Cel;
6.3 V
R-XUUC-N2
UNSPECIFIED
UNCASED CHIP
NOT SPECIFIED
NO LEAD
UPPER
2.42 V
IGC50T120T8RLX7SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum VCEsat: 2.07 V; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Threshold Voltage: 6.3 V;
R-XUUC-N3
2.07 V
DF1000R17IE4PBPSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1000 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
1000 A
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
R-PUFM-X12
12
1890 ns
720 ns
2.45 V
DF100R07W1H5FPB54BPSA2
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum VCEsat: 1.55 V; Terminal Position: UPPER;
650 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
4.75 V
R-XUFM-X14
14
IEC-61140
30 ns
12.6 ns
1.55 V
DF80R07W1H5FPB11BPSA1
DF80R07W1H5FPB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with a max VCEsat of 1.72V and collector-emitter voltage of 650V. Features fast turn-off time (124ns) and operates b/w -40 to 150°C.
R-XUFM-X18
18
124 ns
17 ns
1.72 V
F3L200R12N2H3B47BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel;
COMPLEX
6.35 V
R-XUFM-X23
4
23
520 ns
253 ns
2.15 V
FF1500R17IP5PBPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1500 A; Nominal Turn Off Time (toff): 970 ns; Terminal Form: UNSPECIFIED;
1500 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.25 V
R-PUFM-X14
970 ns
480 ns
FF1800R12IE5PBPSA1
N-Channel; Transistor Element Material: SILICON; Nominal Turn Off Time (toff): 800 ns; Maximum Gate-Emitter Threshold Voltage: 6.35 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 175 Cel;
800 ns
510 ns
FF400R12KT4PBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 2; Terminal Position: UPPER; Minimum Operating Temperature: -40 Cel;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
7
640 ns
205 ns
2.05 V
FF450R33T3E3B5BPSA1
FF450R33T3E3B5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.75V and can handle a Max Collector Current of 450A. Ideal for POWER CONTROL applications, this IGBT operates b/w -40 to 150°C, with a Max Collector-Emitter Voltage of 3300V.
450 A
R-PUFM-X10
10
2190 ns
710 ns
2.75 V
FF450R33T3E3BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Package Shape: RECTANGULAR; Maximum VCEsat: 2.75 V;
FP10R12W1T7B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Terminal Form: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
10 A
6.45 V
1005 ns
45 ns
FP25R12W1T7B11BPSA1
Infineon Technologies' FP25R12W1T7B11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 25A max collector current, and 730ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
25 A
730 ns
65 ns
FS100R12N2T4BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; No. of Terminals: 25; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1200 V;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X25
6
25
490 ns
185 ns
2.1 V
FS100R12W2T7B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 221 ns;
70 A
R-XUFM-X33
33
655 ns
221 ns
FS200R07A02E3S6BKSA2
N-Channel; Maximum Power Dissipation (Abs): 694 W; Maximum Collector Current (IC): 400 A; Maximum Collector-Emitter Voltage: 700 V; Nominal Turn Off Time (toff): 570 ns; Maximum VCEsat: 6.5 V;
400 A
700 V
6.5 V
694 W
570 ns
220 ns
FS400R07A1E3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; No. of Terminals: 23;
500 A
1250 W
200 ns
1.9 V
FS400R07A3E3H6BPSA1
Infineon Technologies' FS400R07A3E3H6BPSA1 is an N-Channel IGBT with a max VCEsat of 6.5V, nominal toff of 430ns, and max power dissipation of 811W. It is commonly used in applications requiring high collector-emitter voltage (705V) and current (5001A), such as power electronics and motor drives.
5001 A
705 V
811 W
430 ns
FS45MR12W1M1B11BOMA1
N-Channel; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: ISOLATED; Nominal Turn Off Time (toff): 55300 ns;
55300 ns
14100 ns
5.55 V
FS900R08A2P2B31BOSA1
N-Channel; Maximum Power Dissipation (Abs): 1546 W; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 750 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Case Connection: ISOLATED;
750 V
1546 W
820 ns
500 ns
FS900R08A2P2B32BOSA1
Infineon's FS900R08A2P2B32BOSA1 IGBT features 750V VCE, 6.5V VGE, and 1546W Ptot. Ideal for high-power applications with N-Channel polarity, it operates b/w -40°C to 150°C efficiently with fast turn-on/off times of 500ns and 820ns respectively.
HGTP7N60A4-F102
HGTP7N60A4-F102 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.7V and a max IC of 34A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and operating temperatures ranging from -55 to 150 °C.
34 A
TO-220AB
235 ns
2.7 V
IFF450B12ME4S8PB11BPSA1
N-Channel; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: ISOLATED; Minimum Operating Temperature: -40 Cel;
690 ns
250 ns
IFF600B12ME4S8PB11BOSA1
N-Channel; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 750 ns; Case Connection: ISOLATED;
750 ns
IHW40N135R5XKSA1
IHW40N135R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1350V VCEsat and 80A IC, ideal for POWER CONTROL applications. Featuring a built-in diode, it has a max power dissipation of 394W and operates in temperatures ranging from -40 to 175°C. This RECTANGULAR transistor with THROUGH-HOLE terminals offers fast turn-off time of 700ns.
80 A
1350 V
394 W
700 ns
1.95 V
IKFW50N60ETXKSA1
IKFW50N60ETXKSA1 by Infineon: N-Channel IGBT with VCEsat of 2V, toff of 378ns, and Pdiss of 164W. Ideal for high-power applications like motor drives and renewable energy systems due to its max VCE of 600V and IC of 73A. Operating temp range from -40°C to 175°C ensures reliability in various environments.
73 A
5.7 V
164 W
378 ns
62 ns
2 V
IKFW75N60ETXKSA1
Infineon IKFW75N60ETXKSA1 is an N-Channel IGBT with VCEsat of 2V, toff of 417ns, and Pmax of 178W. Ideal for high-power applications like motor drives and inverters due to its max VCE of 600V, IC of 80A, and operating temp range from -40°C to 175°C.
178 W
417 ns
79 ns
IKW15N120BH6XKSA1
IKW15N120BH6XKSA1 by Infineon is an N-Channel IGBT with VCEsat of 2.3V, toff of 373ns, and Pmax of 200W. Ideal for high-power applications like motor drives due to its VCE rating of 1200V and IC of 30A. Operating temp range from -40°C to +175°C makes it suitable for various industrial uses.
30 A
200 W
373 ns
46 ns
2.3 V
IKY75N120CS6XKSA1
IKY75N120CS6XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 880W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 331ns and built-in diode configuration. Operates b/w -40°C to 175°C temperature range.
R-PSIP-T4
IN-LINE
880 W
64 ns
ISL9V2040D3STV
ISL9V2040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a collector-emitter voltage of 390V. Ideal for automotive ignition applications, it has a built-in diode and resistor, GULL WING terminals, and can operate b/w -40 to 175 °C.
390 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
12 V
130 W
6000 ns
2780 ns
2LS20017E42W36702NOSA1
N-Channel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1700 V; Minimum Operating Temperature: -25 Cel;
-25 Cel
2PS06017E32G28213NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Form: UNSPECIFIED; Case Connection: ISOLATED; Transistor Element Material: SILICON;
R-XXMA-X
MICROELECTRONIC ASSEMBLY
2PS13512E43W35222NOSA1
2PS13512E43W35222NOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, suitable for POWER CONTROL applications. It has a max operating temperature of 55°C and min of -25°C, housed in a RECTANGULAR MICROELECTRONIC ASSEMBLY package. The transistor's SILICON material and ISOLATED case connection enhance its performance.
55 Cel
2PS18012E44G38553NOSA1
2PS18012E44G38553NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and operating temperature of 150°C. It is designed for POWER CONTROL applications, featuring a COMPLEX configuration in a RECTANGULAR package style suitable for MICROELECTRONIC ASSEMBLY.
8
2PS18012E44G40113NOSA1
2PS18012E44G40113NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. Ideal for power control applications, it operates b/w -25°C to 60°C. Featuring a complex configuration and isolated case connection, this microelectronic assembly contains 8 elements made of silicon.
60 Cel
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