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DF80R07W1H5FPB11BPSA1

Infineon Technologies

DF80R07W1H5FPB11BPSA1 by Infineon Technologies

DF80R07W1H5FPB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with a max VCEsat of 1.72V and collector-emitter voltage of 650V. Features fast turn-off time (124ns) and operates b/w -40 to 150°C.

Median Price

$29.356

Lifecycle Status

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11

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 25 parts In-Stock

1+ parts

$9.020

100+ parts

$8.862

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25

$9.020

$8.862

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Mouser Electronics

USA . 25 parts In-Stock

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$32.550

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25

$32.550

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DigiKey

USA . 29 parts In-Stock

1+ parts

$33.120

100+ parts

$21.758

1k+ parts

$21.387

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29

$33.120

$21.758

$21.387

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Chip1Stop

Japan . 25 parts In-Stock

1+ parts

$47.000

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$47.000

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EBV Elektronik

Germany . 60 parts In-Stock

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Rochester

USA . 30 parts In-Stock

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$20.930

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$18.730

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$17.620

30

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$18.730

$17.620

Verical

USA . 30 parts In-Stock

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-

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$26.163

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$23.413

10k+ parts

$22.025

30

-

$26.163

$23.413

$22.025

Distributors (In-Stock)

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Digiode

USA . 973 parts In-Stock

1+ parts

$25.080

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973

$25.080

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Vyrian

USA . 6,480 parts In-Stock

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NAC Semi

USA . 60 parts In-Stock

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$58.090

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60

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$58.090

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TME

Poland . 60 parts In-Stock

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$27.290

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Modulus Dynamics

Lithuania . 24,199 parts In-Stock

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$0.774

100+ parts

$0.743

1k+ parts

$0.712

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24,199

$0.774

$0.743

$0.712

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Native Components

USA . 68 parts In-Stock

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$0.920

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Northwest PG Solutions

USA . 1,817 parts In-Stock

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$1.013

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1,817

$1.013

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Corphita

USA . 924 parts In-Stock

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$23.760

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$23.760

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Microchip USA

USA . 139 parts In-Stock

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$150.558

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Discover the power of the DF80R07W1H5FPB11BPSA1 by Infineon Technologies, a high-quality Insulated Gate Bipolar Transistor designed for power control applications. With its N-CHANNEL polarity and separate configuration, this transistor offers unmatched reliability and efficiency. Benefit from its fast turn-on and turn-off times, low VCEsat, and high collector-emitter voltage to optimize your power systems. Trust in Infineon Technologies' expertise in semiconductor technology to bring you the best in performance and innovation. Take your power control to the next level with the DF80R07W1H5FPB11BPSA1.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making this product a good choice for power control applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

The separate configuration with built-in diode and thermistor provides added protection and functionality, making this product versatile and reliable for various applications.

Maximum VCEsat: 1.72 V

A lower VCEsat value indicates lower power dissipation and higher efficiency in power control, making this IGBT a high-performance choice.

Nominal Turn Off Time (toff): 124 ns

With a fast turn-off time, this IGBT allows for precise control and switching, ideal for applications where timing is critical.

Maximum Collector-Emitter Voltage: 650 V

The high maximum voltage rating ensures the device can handle high voltage levels, making it suitable for power control in various systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) DF80R07W1H5FPB11BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

4.75 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X18

No. of Elements:

2

No. of Terminals:

18

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

124 ns

Nominal Turn On Time (ton):

17 ns

Maximum VCEsat:

1.72 V

Trade Compliance

DF80R07W1H5FPB11BPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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