Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 1050 ns; Maximum Operating Temperature: 150 Cel;
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Insulated Gate Bipolar Transistors (IGBT) FD1000R33HL3KB60BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Case Connection:
Maximum Collector-Emitter Voltage:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
Maximum Operating Temperature:
Minimum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Transistor Element Material:
Nominal Turn Off Time (toff):
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Maximum VCEsat:
FD1000R33HL3KB60BPSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LM107H
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
1N4148WT
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
M24308/2-1F
TE Connectivity
TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.
SMBJ18CA
Taiwan Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Intersil
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BAV99
Infineon Technologies
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Vishay Intertechnology
Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
1N4148
Semitron
RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;
Littelfuse
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
SS14
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
Surge Components
2N2222A
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
LM7805CT
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;
NC7WZ17P6X
Onsemi
The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
IGP50N60TXKSA1
IGP50N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can operate at temperatures up to 175°C.
IXA70I1200NA
IXA70I1200NA by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 100A IC, and 350W power dissipation. Ideal for power control applications, it features a fast turn-off time of 350ns and operates b/w -40 to 150°C.
IXGH10N170A
IXGH10N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 10A max collector current, and 240ns nominal turn off time. Ideal for motor control applications due to its single configuration and through-hole terminal form.
MGD623S
Sanken Electric
The Sanken Electric MGD623S is an N-CHANNEL IGBT transistor with a max voltage of 600V and current of 50A. It has a turn-off time of 420ns and turn-on time of 175ns, making it ideal for power control applications. The package style is flange mount with a plastic/epoxy body material.
IXGH6N170
IXGH6N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 12A max collector current, and 75W max power dissipation. Ideal for motor control applications due to its single configuration and 600ns nominal turn off time.
IKW50N65ES5XKSA1
Infineon IKW50N65ES5XKSA1 is an N-CHANNEL IGBT with VCEsat of 1.7V, IC of 80A, and Pmax of 274W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 198ns and high operating temperature range (-40 to 175°C). Package: PLASTIC/EPOXY, Shape: RECTANGULAR, Terminals: THROUGH-HOLE.
IRG4BC30FPBF
IRG4BC30FPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 31A max collector current. It has a power dissipation of 100W, turn-off time of 640ns, and fall time of 270ns. Ideal for power control applications due to its single configuration and flange mount package style.
BSM75GB120DN2
Eupec & Kg
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; JESD-30 Code: R-XUFM-X7;
ISL9V5036P3_F085
Fairchild Semiconductor
Fairchild Semiconductor's ISL9V5036P3_F085 is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Power Dissipation of 250W. It features a built-in diode and resistor, making it suitable for POWER CONTROL applications requiring fast switching times up to 7000ns rise time and 15000ns fall time.
FF450R17ME4B11BOSA1
Infineon Technologies' FF450R17ME4B11BOSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.3V and IC of 600A. Operates at -40 to 150 °C, featuring a max VCE of 1700V and Pmax of 2500W in a rectangular package style.
FS150R12KT4
Infineon FS150R12KT4 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 605ns and ton of 165ns, suitable for high-power applications. With a Vce(max) of 1200V and Tj(max) of 150°C, it's commonly used in power electronics for efficient switching operations.
ISL9V3036S3ST
ISL9V3036S3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V and a max IC of 21A. Ideal for automotive ignition applications, it features a built-in diode and resistor, operates at temperatures ranging from -40 to 175 °C, and has a package style of SMALL OUTLINE.
IGW15N120H3FKSA1
IGW15N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 370ns and a turn-on time of 49ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with through-hole terminals, ideal for flange mount installations at temperatures up to 175°C.
FF400R12KE3HOSA1
FF400R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 760 ns turn off time, and a max voltage of 1200 V. It is commonly used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its high current rating of 580 A and fast turn on/off times.
IKW40N65ES5XKSA1
IKW40N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 79A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 204ns and nominal turn-on time of 36ns, suitable for high-speed switching operations.
FF450R12KT4F
Infineon's FF450R12KT4F is an N-Channel IGBT with VCEsat of 2.15V, IC of 580A, and Ptot of 2400W. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its low turn-off time (720ns) and high collector-emitter voltage (1200V).
IKD04N60RFAATMA1
IKD04N60RFAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in automotive electronics (AEC-Q101 compliant).
FP15R12W1T4B11BOMA1
Infineon Technologies' FP15R12W1T4B11BOMA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 28A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its fast turn-off time (495ns) and turn-on time (120ns). Package style: FLANGE MOUNT.
FS400R07A1E3S7BOMA1
Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.
IRG4PC30FPBF
IRG4PC30FPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 31A max collector current. It has a turn-off time of 640ns, turn-on time of 36ns, and can dissipate up to 100W power. Ideal for power control applications due to its single configuration and flange mount package style.
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FD1000R17IE4BOSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1390 A; Terminal Form: UNSPECIFIED; No. of Elements: 1;
FD1000R33HE3KBPSA1
N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1000 A; JESD-30 Code: R-XUFM-X9; Maximum Collector-Emitter Voltage: 3300 V;
FD1000R17IE4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Package Style (Meter): FLANGE MOUNT;
FD1000R17IE4D_B2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1390 A; Transistor Application: POWER CONTROL; Package Shape: RECTANGULAR;
FD1000R17IE4DB2BOSA1
N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 830 ns; Maximum Gate-Emitter Voltage: 20 V;
FD1000R33HE3-K
N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1000 A; Package Shape: RECTANGULAR;
FD1000R33HE3KB60BPSA1
N-Channel; Maximum Power Dissipation (Abs): 11500 W; Nominal Turn Off Time (toff): 3550 ns; Case Connection: ISOLATED; Nominal Turn On Time (ton): 1150 ns; Maximum Operating Temperature: 150 Cel;
FD1000R33HE3KBOSA1
N-Channel; Maximum Power Dissipation (Abs): 9600 W; Maximum VCEsat: 3.1 V; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
FD1000R33HL3-K
N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Turn On Time (ton): 1050 ns; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: ISOLATED;
FD1000R33HL3KBPSA1
N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-XUFM-X9; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;
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