Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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LGB8204ATH
Littelfuse
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; Minimum Operating Temperature: -55 Cel;
COLLECTOR
18 A
430 V
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
15000 ns
1.9 V
18 V
R-PSSO-G2
1
2
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
115 W
AEC-Q101
7000 ns
YES
GULL WING
SINGLE
AUTOMOTIVE IGNITION
SILICON
25000 ns
13000 ns
11000 ns
5200 ns
LGD8201ATI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Package Style (Meter): SMALL OUTLINE;
20 A
440 V
14000 ns
2.1 V
15 V
125 W
24000 ns
18500 ns
9000 ns
6500 ns
LGB8207TH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Threshold Voltage: 2 V;
365 V
2 V
165 W
2000 ns
21000 ns
14700 ns
2750 ns
2450 ns
LGD18N40ATH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A; Maximum Rise Time (tr): 7000 ns;
15 A
NXH450N65L4Q2F2SG
Onsemi
NXH450N65L4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 280A IC, and 633W power dissipation. Ideal for power control applications due to its series connected configuration with built-in diode and thermistor. Operating temperature ranges from -40 °C to 125°C making it suitable for various industrial uses.
ISOLATED
280 A
650 V
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
5.2 V
20 V
R-XUFM-X40
40
125 Cel
-40 Cel
UNSPECIFIED
FLANGE MOUNT
633 W
NO
UPPER
POWER CONTROL
978 ns
192 ns
2.2 V
NXH450N65L4Q2F2PG
NXH450N65L4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.2V and can handle a collector current of up to 280A. Ideal for power control applications due to its high power dissipation capability of 633W and operating temperature range from -40 °C to 125°C.
R-XUFM-X36
36
NXH50M65L4Q1SG
NXH50M65L4Q1SG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 48A IC, and 86W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 130ns and a gate-emitter voltage of 20V. Suitable for high-power systems requiring efficient switching capabilities.
48 A
COMPLEX
R-XUFM-X27
6
27
150 Cel
86 W
130 ns
39 ns
2.22 V
AFGY120T65SPD-B4
AFGY120T65SPD-B4 by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 1.85V and Max Collector-Emitter Voltage of 650V. Ideal for POWER CONTROL applications, it has a Nominal Turn Off Time of 247ns and can handle up to 240A of Max Collector Current (IC).
RC-IGBT
240 A
SINGLE WITH BUILT-IN DIODE
6.2 V
TO-247
R-PSFM-T3
3
882 W
THROUGH-HOLE
247 ns
183 ns
1.85 V
IXYT55N120A4HV
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 175 A; Maximum Gate-Emitter Voltage: 20 V;
175 A
1200 V
6.5 V
TO-268AA
650 W
910 ns
53 ns
1.8 V
STGF30H65DFB2
STMicroelectronics
STGF30H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 50A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.
50 A
7 V
TO-220AB
50 W
184 ns
27.5 ns
STGP20H65DFB2
STGP20H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 40A, and Ptot of 147W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 178ns and high collector-emitter voltage rating of 650V. Package style is FLANGE MOUNT with through-hole terminals.
40 A
147 W
178 ns
26 ns
STGWA20HP65FB2
STGWA20HP65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temps from -55 °C to 175 °C. Ideal for high-performance applications like motor drives and power converters.
STGB20H65FB2
STGB20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, 650V collector-emitter voltage, and operates at temperatures up to 175 °C. Ideal for high-performance applications in energy conversion systems.
TO-263AB
STGP20H65FB2
STGP20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.
IXYT85N120A4HV
Littelfuse IXYT85N120A4HV is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 1.8V, it offers a high collector-emitter voltage of 1200V and can handle up to 300A collector current. Its small outline package and gull wing terminals make it suitable for surface mount designs in power electronics.
300 A
1150 W
990 ns
73 ns
STGWA30H65DFB2
STGWA30H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 50A, and Pmax of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 184ns and high collector-emitter voltage rating of 650V. Suitable for use in various power control systems requiring efficient switching capabilities.
167 W
STGB20H65DFB2
STGB20H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.
LGB18N40ATH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; No. of Elements: 1;
SINGLE WITH BUILT-IN DIODE AND RESISTOR
LGB8245TI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Transistor Element Material: SILICON;
500 V
12000 ns
150 W
6000 ns
20000 ns
12500 ns
8000 ns
4400 ns
STGP30H65DFB2
STGP30H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 50A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.
RGS30TSX2HRC11
ROHM
ROHM's RGS30TSX2HRC11 is an N-CHANNEL IGBT with 1200V VCEsat, 30A IC, and 267W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 189ns and operates b/w -40 to 175°C.
30 A
30 V
e3
267 W
TIN
189 ns
STGWA20IH65DF
STGWA20IH65DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.05V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.
159 W
230 ns
2.05 V
STGWA30IH65DF
STGWA30IH65DF from STMicroelectronics is a robust N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates efficiently b/w -55 °C to 175 °C. Ideal for high-power switching tasks in various electronic systems.
60 A
NOT SPECIFIED
180 W
312 ns
STGW75H65DFB2-4
STGW75H65DFB2-4 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 115A, and Pmax of 357W. Ideal for power control applications due to its fast turn-off time (toff) of 231ns and high collector-emitter voltage of 650V. Package style is flange mount with through-hole terminals.
115 A
R-PSFM-T4
4
357 W
231 ns
42 ns
STGW50H65DFB2-4
STGW50H65DFB2-4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 86A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications in industrial and automotive sectors.
86 A
272 W
34 ns
NXH300B100H4Q2F2SG
NXH300B100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.25V, and IC of 73A. Ideal for POWER CONTROL applications, it has a toff of 326ns, ton of 110.42ns, and can handle up to 194W power dissipation.
73 A
1000 V
5.9 V
R-XUFM-X59
59
194 W
326 ns
110.42 ns
2.25 V
NXH300B100H4Q2F2PG
NXH300B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.25V, and IC of 73A. Ideal for POWER CONTROL applications, it has a toff of 326ns and ton of 110.42ns. Operating temperature ranges from -40 °C to 175°C, making it suitable for high-power systems.
IXYT40N120A4HV
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 140 A; No. of Terminals: 2;
140 A
600 W
1040 ns
67 ns
STGW100H65FB2-4
STGW100H65FB2-4 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2V, supports up to 441W power dissipation, and operates b/w -55 °C to 175 °C. Ideal for high-efficiency switching in industrial systems.
145 A
441 W
255 ns
49 ns
STGB25N36LZAG
STGB25N36LZAG IGBT from STMicroelectronics features a max VCEsat of 1.25V, supports up to 25A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for automotive ignition applications, it ensures reliable performance with built-in TVS diode. Its compact surface mount design enhances space efficiency in electronic circuits.
25 A
385 V
16 V
14500 ns
4560 ns
1.25 V
STGI25N36LZAG
STGI25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, supports up to 25A collector current, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in harsh environments.
R-PSIP-T3
IN-LINE
STGD25N36LZAG
STGD25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, power dissipation of 150W, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in demanding environments.
TO-252
LGB8202ATI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;
LGB8206ATI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Terminal Form: GULL WING;
390 V
LGB8206ARI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Case Connection: COLLECTOR;
LGD8205ATI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Reference Standard: AEC-Q101;
18000 ns
10000 ns
7500 ns
RGW80TS65CHRC11
ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.
81 A
214 W
185 ns
54 ns
AFGHL40T65RQDN
AFGHL40T65RQDN by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.82V and a collector-emitter voltage of 650V. It is designed for power control applications, featuring a single configuration with built-in diode and a max power dissipation of 288W.
46 A
6.05 V
260
288 W
MATTE TIN
30
149 ns
74 ns
1.82 V
NXH75M65L4Q1PTG
NXH75M65L4Q1PTG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 59A IC, and 83W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 146ns and operates b/w -40 to 150 °C.
59 A
83 W
146 ns
72 ns
NXH75M65L4Q1SG
NXH75M65L4Q1SG by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.22V, it offers a Max Collector-Emitter Voltage of 650V and Max Power Dissipation of 83W. Ideal for high-power systems requiring fast switching capabilities with Nominal Turn Off Time of 146ns and Nominal Turn On Time of 72ns.
LGB8207ATH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 20 A; Maximum Fall Time (tf): 15000 ns;
IXGA48N60C3-TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 75 A; Minimum Operating Temperature: -55 Cel;
75 A
600 V
5.5 V
300 W
10
187 ns
45 ns
2.5 V
STGP20IH65DF
STGP20IH65DF by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05 V, supports up to 650 V collector-emitter voltage, and has a power dissipation of 159 W. Ideal for high-efficiency switching in industrial systems.
159 ns
VS-GT55LA120UX
Vishay Intertechnology
VS-GT55LA120UX by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 68A max collector current. Ideal for power control applications, it features a built-in diode, 260ns turn off time, and 291W max power dissipation.
68 A
7.6 V
R-PUFM-X4
291 W
UL RECOGNIZED
260 ns
19 ns
VS-GT90DA120U
VS-GT90DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V VCEsat, 2.6V, and 169A IC. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40 to 150 °C.
169 A
781 W
UL APPROVED
270 ns
61 ns
2.6 V
LGD8209TI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 12 A; Transistor Application: AUTOMOTIVE IGNITION;
12 A
445 V
94 W
STGP30IH65DF
STGP30IH65DF by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.
233 ns
FGHL75T65LQDTL4
FGHL75T65LQDTL4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.35V and a max IC of 80A. It is designed for power control applications, featuring a single configuration with built-in diode and a package style of flange mount.
80 A
6 V
469 W
660 ns
60 ns
1.35 V
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