Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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STGP8NC60K
STMicroelectronics
STGP8NC60K from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600 V, a nominal turn-off time of 242 ns, and can handle up to 15 A of collector current. This robust device operates efficiently at temperatures up to 150 °C.
15 A
600 V
SINGLE
6.5 V
20 V
TO-220AB
R-PSFM-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
65 W
Not Qualified
Insulated Gate BIP Transistors
NO
MATTE TIN
THROUGH-HOLE
POWER CONTROL
SILICON
242 ns
23 ns
STGW35NC60WD
STGW35NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 250 W, and operates at up to 150 °C. Its fast switching times (ton: 42.5 ns, toff: 197 ns) enhance performance in various electronic systems.
70 A
SINGLE WITH BUILT-IN DIODE
5.75 V
TO-247AC
NOT SPECIFIED
250 W
197 ns
42.5 ns
STGW40NC60KD
STGW40NC60KD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 338 ns. Ideal for high-performance switching in industrial systems.
TO-247
Matte Tin (Sn)
338 ns
64 ns
STGW30N120KD
STGW30N120KD IGBT from STMicroelectronics is ideal for motor control applications, featuring a max collector-emitter voltage of 1200 V and power dissipation of 220 W. It has a fast turn-on time of 57 ns and operates at up to 125 °C. This N-channel device ensures efficient performance in demanding environments.
60 A
1200 V
25 V
125 Cel
220 W
MOTOR CONTROL
756 ns
57 ns
STGW33IH120D
STGW33IH120D IGBT from STMicroelectronics features a max collector-emitter voltage of 1200 V and power dissipation of 220 W, ideal for motor control applications. It has a fast turn-on time of 57 ns and operates at up to 150 °C. This N-channel device ensures efficient performance in demanding environments.
740 ns
GT50N322A
Toshiba
Toshiba's GT50N322A is an N-CHANNEL IGBT with 1000V max collector-emitter voltage, 50A max collector current, and 700ns turn-off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.
COLLECTOR
50 A
1000 V
700 ns
330 ns
STGP30NC60S
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 55 A; Package Shape: RECTANGULAR;
55 A
175 W
555 ns
30 ns
STGW45NC60VD
STGW45NC60VD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 90 A collector current, and a fast turn-off time of 366 ns. Ideal for high-performance switching in industrial systems.
90 A
270 W
366 ns
46 ns
STGW50NC60W
STGW50NC60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 285 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
100 A
285 W
343 ns
69 ns
NGTB30N65IHL2WG
Onsemi
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; JESD-609 Code: e3;
650 V
175 Cel
300 W
Matte Tin (Sn) - annealed
NGTB35N60FL2WG
NGTB35N60FL2WG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 300W Pd. It operates up to 175°C making it ideal for high-power applications like motor drives and inverters. With surface mount capability and a gate-emitter threshold voltage of 6.5V, it offers efficient power management in various industrial settings.
YES
NGTB35N65FL2WG
The Onsemi NGTB35N65FL2WG is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 300W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.
NGTB60N60SWG
NGTB60N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 298W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
120 A
298 W
TIN
STGD19N40LZ
STGD19N40LZ by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.85V, IC of 25A, and Ptot of 125W. It is used for power control applications in a small outline package with a max operating temperature of 175°C.
25 A
425 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.6 V
16 V
TO-252
R-PSSO-G2
2
-55 Cel
SMALL OUTLINE
260
125 W
AEC-Q101
GULL WING
30
22200 ns
4450 ns
1.85 V
STGFW40V60F
STGFW40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 241ns, ton of 73ns, and can operate at temperatures ranging from -55°C to 175°C.
80 A
7 V
98.5 W
241 ns
73 ns
2.3 V
VS-GA200SA60UP
Vishay Intertechnology
VS-GA200SA60UP by Vishay Intertechnology is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 200A max collector current. It has a single configuration for power control applications, featuring a rectangular package style with flange mount and isolated case connection. Nominal turn off time is 620ns and turn on time is 131ns, making it suitable for high-power switching needs.
LOW CONDUCTION LOSS
ISOLATED
200 A
R-PUFM-X4
4
UL APPROVED
UNSPECIFIED
UPPER
620 ns
131 ns
CM1000E3U-34NF
Powerex
Powerex CM1000E3U-34NF is an N-CHANNEL IGBT with 1700V VCE, 1000A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style.
1000 A
1700 V
R-XUFM-X4
IKD06N60R
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Transistor Application: POWER CONTROL;
12 A
5.7 V
100 W
335 ns
22 ns
IKD10N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; JESD-609 Code: e3;
20 A
150 W
428 ns
24 ns
IKD15N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 175 Cel;
30 A
430 ns
26 ns
STGW35HF60WD
STGW35HF60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and fast switching times (ton: 45 ns, toff: 295 ns). Ideal for high-temperature environments with a max operating temp of 150 °C.
200 W
295 ns
45 ns
STGW45HF60WD
STGW45HF60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns.
250 ns
44 ns
STGB30NC60KT4
STGB30NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 41 ns, toff: 290 ns). Ideal for high-performance power management in compact designs.
TO-263AB
185 W
290 ns
41 ns
STGB30NC60WT4
STGB30NC60WT4 from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 200W, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic systems.
245
189 ns
STGP19NC60H
STGP19NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 40A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
40 A
130 W
272 ns
32 ns
STGP30NC60K
STGP30NC60K from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 185 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
STGW19NC60H
STGW19NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 140 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
42 A
140 W
STGF30NC60S
STGF30NC60S from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 555ns, and can handle up to 22A. Ideal for high-temperature environments with a max operating temp of 150 °C.
22 A
40 W
STGWF30NC60S
STGWF30NC60S by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 1.9V, supports up to 35A collector current, and operates at temperatures from -55 °C to 150°C. Its robust design ensures efficient performance in demanding environments.
35 A
79 W
1.9 V
STGP18N40LZ
STGP18N40LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.
VOLTAGE CLAMPING
420 V
AUTOMOTIVE IGNITION
STGW38IH130D
STGW38IH130D by STMicroelectronics is an N-CHANNEL IGBT with 1300V VCE, 63A IC, and 250W Ptot. Ideal for power control applications, it features a built-in diode and operates up to 150°C.
63 A
1300 V
STGWS38IH130D
STGWS38IH130D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 1300 V, a nominal turn-off time of 740 ns, and can handle up to 180 W dissipation. Ideal for high-temperature applications with a max operating temp of 150 °C.
180 W
STGB20NC60VT4
STGB20NC60VT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 200 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
280 ns
STGW35NC120HD
STGW35NC120HD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 60 A collector current, and a turn-off time of just 928 ns. Ideal for high-performance switching in industrial systems.
928 ns
FF600R12IS4F
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V;
600 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X7
7
3700 W
630 ns
270 ns
3.75 V
STGE50NB60HD
STGE50NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max VCEsat of 2.8V, 600V collector-emitter voltage, and handles up to 100A current. With a compact flange mount design, it operates efficiently at temperatures up to 150 °C.
NICKEL
540 ns
90 ns
2.8 V
STGP3NB60HD
STGP3NB60HD by STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 70 W, and fast switching times (ton: 16 ns, toff: 168 ns). Its flange mount design ensures reliable performance in demanding environments.
10 A
5 V
70 W
168 ns
16 ns
FGP30N6S2D
Fairchild Semiconductor
Fairchild Semiconductor's FGP30N6S2D is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 45A max collector current. It has a built-in diode, 100ns fall time, and 163ns turn off time. Ideal for power control applications with a max power dissipation of 167W at up to 150°C operating temperature.
45 A
100 ns
167 W
163 ns
28 ns
FGH60N6S2
FGH60N6S2 by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 625W. It has a nominal turn-off time of 187ns, making it suitable for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, ideal for high-power applications in industrial settings.
75 A
625 W
187 ns
59 ns
NGTB30N60SWG
NGTB30N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 189W Pd. It has a toff of 285ns and ton of 90ns, suitable for power control applications requiring fast switching speeds. The transistor comes in a PLASTIC/EPOXY package with through-hole terminals and can operate up to 150 °C.
189 W
Tin (Sn)
285 ns
NGB15N41CLT4
NGB15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.
440 V
15000 ns
2.1 V
15 V
e0
235
107 W
7000 ns
TIN LEAD
15500 ns
5700 ns
NGD15N41CLT4
NGD15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.
NGP15N41CL
NGP15N41CL by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Power Dissipation of 107W. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. With a rise time of 7000ns and fall time of 15000ns, this transistor offers reliable performance in automotive systems.
SIGC109T120R3
Infineon's SIGC109T120R3 is an N-CHANNEL IGBT with a max voltage of 1200V and max current of 100A. Ideal for POWER CONTROL applications, it has a turn-off time of 610ns and turn-on time of 330ns. Suitable for surface mount with a max operating temp of 150°C.
R-XUUC-N
UNCASED CHIP
NO LEAD
610 ns
FMG1G100US60L
FMG1G100US60L by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 2.8V VCE. Ideal for MOTOR CONTROL applications, it has a toff of 320ns and ton of 85ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and SILICON element.
R-PUFM-X7
400 W
320 ns
85 ns
MWI100-12E8
IXYS Corporation
IXYS Corporation's MWI100-12E8 is an N-CHANNEL IGBT bridge with 6 elements and built-in diode, ideal for power control applications. It features a max VCEsat of 2.5V, can handle up to 165A collector current, and has a max operating temperature of 150°C. This UL RECOGNIZED device offers fast turn-off time (795ns) and high power dissipation (640W), making it suitable for demanding industrial environments.
165 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X11
6
11
640 W
UL RECOGNIZED
TIN OVER NICKEL
795 ns
345 ns
2.5 V
FGH20N6S2D
FGH20N6S2D by Fairchild Semiconductor is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a single configuration with built-in diode, ideal for power control applications. This transistor offers fast switching times with a nominal turn-off time of 205ns and a max fall time of 105ns.
28 A
105 ns
205 ns
11.5 ns
STGP10NB60SFP
STGP10NB60SFP from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 31.5 W, and operates up to 150 °C. Its through-hole design ensures easy integration in various systems.
31.5 W
1160 ns
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