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STGW30N120KD

STMicroelectronics

STGW30N120KD by STMicroelectronics

STGW30N120KD IGBT from STMicroelectronics is ideal for motor control applications, featuring a max collector-emitter voltage of 1200 V and power dissipation of 220 W. It has a fast turn-on time of 57 ns and operates at up to 125 °C. This N-channel device ensures efficient performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,078 parts In-Stock

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5,078

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Anansix

USA . 2,199 parts In-Stock

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Digiode

USA . 971 parts In-Stock

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971

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Chip Stock

USA . 155 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.758

100+ parts

$0.690

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$0.622

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5,000

$0.758

$0.690

$0.622

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IDEA Electronic Components Group

UK . 48 parts In-Stock

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$1.349

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$1.214

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48

$1.349

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$1.214

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MKK Technologies

India . 935 parts In-Stock

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$2.536

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935

$2.536

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DigiPath Technology Company

USA . 935 parts In-Stock

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$2.536

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935

$2.536

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AZTECH Wire

Italy . 153 parts In-Stock

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$18.670

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Corphita

USA . 1,129 parts In-Stock

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Perfect Parts

USA . 1,056 parts In-Stock

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1,056

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Parana Technologies

USA . 631 parts In-Stock

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$1.613

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$1.613

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Overview

Unlock unparalleled performance with the STGW30N120KD IGBT from STMicroelectronics, a trusted leader in semiconductor technology. Designed for motor control applications, this robust device combines exceptional power handling with reliability, ensuring your systems run smoothly and efficiently. With its compact design and built-in diode, the STGW30N120KD simplifies integration while offering outstanding thermal performance—ideal for demanding industrial environments. Elevate your projects with ST’s quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers durability and resistance to environmental factors, making it suitable for various industrial applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are efficient at conducting current and are widely used in motor control applications, providing high performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances efficiency in applications where flyback diodes are typically needed.

Transistor Application: MOTOR CONTROL

Optimized for motor control, this IGBT can drive motors effectively, making it ideal for automation and robotic systems.

Package Shape: RECTANGULAR

The rectangular shape aids in effective heat dissipation and allows for efficient space utilization in circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide solid mechanical and electrical connections, ensuring reliability in high-power applications.

Nominal Turn Off Time (toff): 756 ns

A relatively fast turn-off time allows for efficient switching in applications, reducing energy losses and improving performance.

No. of Terminals: 3

With three terminals, this IGBT offers versatile connection options, making it suitable for a variety of circuit configurations.

Maximum Power Dissipation (Abs): 220 W

A high power dissipation capability ensures the device can handle substantial energy loads, crucial for robust industrial applications.

Package Style (Meter): FLANGE MOUNT

Flange mounting allows for better thermal management and simplifies installation in various environments.

Maximum Operating Temperature: 125 °C

The ability to operate at higher temperatures increases the flexibility and reliability of this IGBT in demanding applications.

Maximum Collector-Emitter Voltage: 1200 V

A high voltage rating makes this IGBT suitable for applications requiring significant voltage levels, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the element material ensures stability, cost-effectiveness, and high-performance operation in various applications.

Maximum Gate-Emitter Voltage: 25 V

The moderate gate-emitter voltage ensures safe operation and compatibility with a wide range of driving circuits.

Maximum Collector Current (IC): 60 A

A maximum collector current of 60 A allows for handling substantial loads, making it suitable for demanding industrial environments.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

A low gate-emitter threshold voltage promotes effective and efficient control of the transistor, enhancing system responsiveness.

Terminal Position: SINGLE

A single terminal position simplifies design and layout, reducing the complexity of the overall circuit.

Nominal Turn On Time (ton): 57 ns

A fast turn-on time allows the IGBT to respond quickly in switching applications, improving overall system efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGW30N120KD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

756 ns

Nominal Turn On Time (ton):

57 ns

Trade Compliance

STGW30N120KD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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