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GT50N322A

Toshiba

GT50N322A by Toshiba

Toshiba's GT50N322A is an N-CHANNEL IGBT with 1000V max collector-emitter voltage, 50A max collector current, and 700ns turn-off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.

Median Price

$5.040

Lifecycle Status

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4

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 144 parts In-Stock

1+ parts

$4.540

100+ parts

$3.150

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$2.210

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144

$4.540

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DigiKey

USA . 99 parts In-Stock

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$5.540

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$2.658

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$2.188

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99

$5.540

$2.658

$2.188

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Vyrian

USA . 7,982 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Ampacity Inc.

Singapore . 116 parts In-Stock

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$3.860

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116

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Microchip USA

USA . 6,672 parts In-Stock

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$31.070

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6,672

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RC Electronics

USA . 6,300 parts In-Stock

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6,300

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Aranea Global

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,064 parts In-Stock

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Argo Parts USA

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Overview

When it comes to high-quality power control solutions, look no further than the Toshiba GT50N322A Insulated Gate Bipolar Transistor. Manufactured by industry leader Toshiba, this N-CHANNEL transistor boasts a single configuration with a built-in diode, making it ideal for a wide range of applications. With a maximum collector-emitter voltage of 1000V and a nominal turn-off time of 700ns, this transistor offers unmatched performance and reliability. Upgrade your power control systems with the GT50N322A and experience the value and benefits that only Toshiba can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the IGBT.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and high performance in various applications.

Transistor Application: POWER CONTROL

Suitable for power control applications, making it a versatile choice for different industries.

Maximum Collector-Emitter Voltage: 1000 V

Can handle high voltages, making it suitable for applications that require robust performance.

Maximum Collector Current (IC): 50 A

Capable of handling high currents, making it ideal for power control applications that require high output.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) GT50N322A attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1000 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

700 ns

Nominal Turn On Time (ton):

330 ns

Trade Compliance

GT50N322A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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