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Toshiba Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
GT20J341,S4X(S by Toshiba

GT20J341,S4X(S

Toshiba

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V;

20 A

600 V

25 V

150 Cel

N-CHANNEL

45 W

Insulated Gate BIP Transistors

NO

GT50N322A by Toshiba

GT50N322A

Toshiba

Toshiba's GT50N322A is an N-CHANNEL IGBT with 1000V max collector-emitter voltage, 50A max collector current, and 700ns turn-off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.

COLLECTOR

50 A

1000 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

700 ns

330 ns

GT15J341,S4X by Toshiba

GT15J341,S4X

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 15 A; No. of Elements: 1;

ISOLATED

15 A

600 V

SINGLE WITH BUILT-IN DIODE

25 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

30 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

320 ns

180 ns

2 V

GT30J341,Q by Toshiba

GT30J341,Q

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 59 A; Maximum Gate-Emitter Voltage: 25 V;

COLLECTOR

59 A

600 V

SINGLE WITH BUILT-IN DIODE

25 V

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

400 ns

250 ns

2 V

GT50J341,Q by Toshiba

GT50J341,Q

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 600 V;

50 A

600 V

SINGLE WITH BUILT-IN DIODE

350 ns

25 V

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

450 ns

270 ns

2.2 V