Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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STGB3NB60KDT4
STMicroelectronics
STGB3NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 10A collector current, and fast switching times (ton: 19ns, toff: 220ns). Ideal for applications in energy conversion and motor drives.
10 A
600 V
SINGLE WITH BUILT-IN DIODE
7 V
20 V
R-PSSO-G2
e3
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
68 W
Not Qualified
Insulated Gate BIP Transistors
YES
MATTE TIN
GULL WING
SINGLE
POWER CONTROL
SILICON
220 ns
19 ns
STGB7NB60KDT4
STGB7NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and operates at up to 150 °C. Ideal for applications requiring high efficiency in compact designs.
14 A
95 W
202 ns
21 ns
STGP3NB60KD
STGP3NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 220ns, and can handle up to 68W dissipation. Ideal for high-performance switching in industrial systems.
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
NO
THROUGH-HOLE
STGP7NB60KD
STGP7NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 202ns. Ideal for high-performance switching in industrial systems.
STGP12NB60HD
STGP12NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 100W, and fast switching times (ton: 51ns, toff: 295ns). Its robust design ensures reliable performance in demanding environments.
30 A
5 V
100 W
MOTOR CONTROL
295 ns
51 ns
SGL160N60UFTU
Fairchild Semiconductor
SGL160N60UFTU by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 160A. It is designed for MOTOR CONTROL applications, featuring a Nominal Turn Off Time of 262ns and Max Power Dissipation of 250W.
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
160 A
150 ns
6.5 V
TO-264AA
250 W
262 ns
NGTB40N60FL2WG
Onsemi
NGTB40N60FL2WG by Onsemi is an N-CHANNEL IGBT with 366W power dissipation, 600V collector-emitter voltage, and 80A collector current. It operates up to 175 °C making it ideal for high-power applications in industrial machinery, renewable energy systems, and electric vehicles.
80 A
175 Cel
366 W
Tin (Sn)
STGB7NB40LZT4
STGB7NB40LZT4 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 370 V, power dissipation of 100 W, and operates at up to 175 °C. This surface-mount device ensures efficient performance with built-in diode and resistor.
VOLTAGE CLAMPING
COLLECTOR
370 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.2 V
12 V
245
Matte Tin (Sn) - annealed
30
AUTOMOTIVE IGNITION
8000 ns
5400 ns
NGB18N40CLBT4
NGB18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.
18 A
430 V
15000 ns
1.9 V
18 V
e0
235
115 W
7000 ns
TIN LEAD
13000 ns
5200 ns
NGD18N40CLBT4
NGD18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 15A, and power dissipation of 115W. The transistor operates at a max temperature of 175 °C with rise time of 7000ns and fall time of 15000ns.
15 A
STGE200NB60S
STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.
ISOLATED
200 A
R-XUFM-X4
4
UNSPECIFIED
600 W
NICKEL
UPPER
4600 ns
170 ns
1.6 V
STGW40NC60V
STGW40NC60V from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a nominal turn-off time of 247 ns, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
TO-247
Matte Tin (Sn)
247 ns
61 ns
STGW20NB60KD
STGW20NB60KD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 150W, and fast switching times (ton: 76ns, toff: 280ns). Its robust design ensures reliable performance in demanding environments.
40 A
TO-247AC
150 W
280 ns
76 ns
STGB3NB60FDT4
STGB3NB60FDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and fast switching times (ton: 16.5ns, toff: 535ns). Its compact design ensures efficient performance in surface mount configurations.
6 A
535 ns
16.5 ns
STGP3NB60FD
STGP3NB60FD by STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.
STGP3NB60F
STGP3NB60F from STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 68 W, and operates at up to 150 °C. Its fast switching times (ton: 16.5 ns, toff: 535 ns) enhance efficiency in various systems.
STGF3NB60FD
STGF3NB60FD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 25W, and a turn-off time of just 535ns. This robust device operates efficiently up to 150 °C.
25 W
STGB20NB37LZT4
STGB20NB37LZT4 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max power dissipation of 200W, a collector current of 40A, and operates at up to 175 °C. Its compact surface mount design ensures efficient thermal management.
2 V
200 W
2900 ns
STGB12NB60KDT4
STGB12NB60KDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and fast switching times (toff: 461ns, ton: 39.5ns). Its compact design ensures efficient performance in surface mount configurations.
125 W
461 ns
39.5 ns
STGP12NB60KD
STGP12NB60KD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and a turn-off time of 461ns. This robust device operates efficiently at up to 150 °C.
STGB10NB40LZT4
STGB10NB40LZT4 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 380V, power dissipation of 150W, and operates at up to 175 °C. Its compact design ensures efficient performance in demanding environments.
20 A
380 V
12000 ns
1570 ns
IXGR40N60C2D1
IXYS Corporation
IXGR40N60C2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 56A max collector current, and 210ns turn-off time. Ideal for power control applications due to its single configuration with built-in diode and silicon transistor element material.
56 A
R-PSIP-T3
e1
IN-LINE
TIN SILVER COPPER
210 ns
38 ns
NGD8201NT4
NGD8201NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 115W. This surface-mount transistor operates at up to 175 °C with rise time of 14000ns and fall time of 7000ns.
440 V
2.3 V
15 V
14000 ns
18500 ns
6500 ns
IRG4BC30W-STRL
International Rectifier
IRG4BC30W-STRL by International Rectifier is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 23A. It has a Nominal Turn Off Time of 300ns and Nominal Turn On Time of 41ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals for surface mount installation.
LOW CONDUCTION LOSS
23 A
300 ns
41 ns
STGP100N30
STMicroelectronics' STGP100N30 is an N-CHANNEL IGBT with 330V VCE, 90A IC, and 250W Ptot. Ideal for general purpose switching applications due to its fast 310ns turn-off time and max operating temp of 150°C. Package style is flange mount with through-hole terminals.
90 A
330 V
5.5 V
NOT SPECIFIED
GENERAL PURPOSE SWITCHING
310 ns
STGD10NC60HDT4
STGD10NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 62W max power dissipation. Ideal for power control applications, it features a built-in diode, 247ns turn-off time, and operates up to 150°C.
5.75 V
TO-252AA
260
62 W
STGD3NB60HDT4
STGD3NB60HDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 50W, and fast switching times (ton: 25ns, toff: 168ns). This compact device ensures efficient performance in demanding environments.
50 W
168 ns
25 ns
STGB7NC60HDT4
STGB7NC60HDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 25A collector current, and a fast turn-off time of 221ns. Ideal for high-performance switching in compact designs.
25 A
TO-263AB
80 W
221 ns
25.5 ns
STGD5NB120SZ-1
STGD5NB120SZ-1 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 10 A collector current, and operates at up to 150 °C. Its built-in diode enhances performance in various electronic systems.
1200 V
TO-251AA
55 W
TIN
14100 ns
850 ns
STGF20NB60S
STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.
24 A
40 W
3600 ns
162 ns
STGF7NC60HD
STGF7NC60HD by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 221ns, and operates at up to 150 °C. Its robust design ensures efficient performance in demanding environments.
STGY40NC60VD
STMicroelectronics' STGY40NC60VD is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 260W Ptot. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and a turn-off time of 247ns. The package is RECTANGULAR in shape with THROUGH-HOLE terminals.
260 W
NGB8202NT4
NGB8202NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 150W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 8000ns and fall time of 14000ns.
2.1 V
NGD8205NT4
NGD8205NT4 by Onsemi is an N-CHANNEL IGBT with 20A IC, 390V VCE, and 88W Pd. Ideal for automotive ignition applications due to its built-in diode and resistor. Features GULL WING terminals, RECTANGULAR package shape, and operates up to 175 °C.
390 V
88 W
IHP10T120
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 138 W; Maximum Collector Current (IC): 16 A; Nominal Turn Off Time (toff): 769 ns;
16 A
138 W
769 ns
69 ns
STGW19NC60W
STGW19NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 140W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.
42 A
140 W
204 ns
33 ns
IXGH40N60B2D1
IXGH40N60B2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 75A max collector current, and 38ns turn on time. Ideal for power control applications due to its single configuration with built-in diode and plastic/epoxy package body material.
75 A
TO-247AD
390 ns
IXGH40N60B2
IXGH40N60B2 by IXYS Corp is an N-CHANNEL IGBT with 600V VCE, 75A IC, and 38ns ton. Ideal for POWER CONTROL applications due to its fast switching speed and high collector current capacity. The PLASTIC/EPOXY package with FLANGE MOUNT style ensures reliable performance in various environments.
IXGN60N60C2D1
IXYS Corporation's IXGN60N60C2D1 is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 75A, and Pmax of 480W. Ideal for power control applications due to its fast turn-off time (toff) of 210ns and high operating temperature up to 150°C. The device features a built-in diode, UL recognized, and is flange mountable for efficient heat dissipation.
R-PUFM-X4
480 W
UL RECOGNIZED
43 ns
2.5 V
IXGR32N170AH1
IXGR32N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V VCE, 26A IC, and 107ns ton. Ideal for power control applications, it features a built-in diode, isolated case connection, and UL recognition.
26 A
1700 V
370 ns
107 ns
IXGT16N170AH1
IXGT16N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 16A max collector current, and 190W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 330ns and built-in diode configuration.
TO-268AA
190 W
10
330 ns
97 ns
STGB10NB60ST4
STGB10NB60ST4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 29A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
29 A
3100 ns
1160 ns
STGP7NC60H
STGP7NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
MGP15N40CLG
MGP15N40CLG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max collector current of 15A. It features a built-in diode and resistor, making it ideal for automotive ignition applications. With a package style of FLANGE MOUNT and max power dissipation of 150W, this transistor operates at temperatures up to 175 °C.
20000 ns
22 V
6000 ns
20500 ns
NGB18N40CLBT4G
NGB18N40CLBT4G by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 430V and a max gate-emitter voltage of 18V. It has a built-in diode and resistor, making it suitable for automotive ignition applications. This IGBT has a max power dissipation of 115W and operates at temperatures up to 175 °C.
NGB8202NT4G
NGB8202NT4G by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for POWER CONTROL applications. With a small outline package style and surface mount capability, it offers efficient performance up to 175°C operating temperature.
NGD8201NT4G
NGD8201NT4G by Onsemi is an N-CHANNEL IGBT with 20A IC, 400V VCE, and 125W power dissipation. Ideal for power control applications, it features a built-in diode and resistor in a small outline package suitable for surface mount technology.
400 V
NGP15N41CLG
NGP15N41CLG by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 440V, collector current of 15A, and power dissipation of 107W. With rise time of 7000ns and fall time of 15000ns, it operates at temperatures up to 175 °C.
107 W
15500 ns
5700 ns
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