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IXGH40N60B2D1

IXYS Corporation

IXGH40N60B2D1 by IXYS Corporation

IXGH40N60B2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 75A max collector current, and 38ns turn on time. Ideal for power control applications due to its single configuration with built-in diode and plastic/epoxy package body material.

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Advanced Electronics

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AZTECH Wire

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Overview

Experience the superior quality and reliability of the IXGH40N60B2D1 Insulated Gate Bipolar Transistor by IXYS Corporation. Designed for power control applications, this N-CHANNEL transistor offers exceptional performance with a built-in diode for added convenience. With a maximum collector-emitter voltage of 600V and a collector current of 75A, this transistor is a valuable asset for your electronic projects. Trust in IXYS Corporation for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package material provides good insulation properties, enhancing the overall safety and reliability of the product.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower ON-resistance and faster switching speeds compared to P-channel IGBTs, making them suitable for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps in reducing circuit complexity and can protect the IGBT against reverse voltage spikes, increasing the overall efficiency of the power control system.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is suitable for controlling high power loads efficiently and effectively.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into various electronic devices and equipment.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection, making it easier to solder the IGBT onto a circuit board.

Nominal Turn Off Time (toff): 390 ns

Fast turn-off time helps in reducing power loss and enhancing the switching speed of the IGBT, improving overall performance.

No. of Terminals: 3

Having 3 terminals allows for easy connection and control in various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides a stable and secure mounting option for the IGBT, ensuring proper heat dissipation and reliability.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT can withstand elevated temperatures and operate reliably in demanding environments.

Maximum Collector-Emitter Voltage: 600 V

With a high collector-emitter voltage rating, this IGBT can handle high voltage loads, making it suitable for power control applications.

Transistor Element Material: SILICON

Silicon-based transistor element material offers good performance and reliability, making this IGBT a dependable choice for power control applications.

Maximum Collector Current (IC): 75 A

High collector current rating allows this IGBT to handle high power loads with ease, making it suitable for power control applications.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper alignment during installation.

Case Connection: COLLECTOR

Collector case connection helps in dissipating heat effectively and improving the overall thermal performance of the IGBT.

Nominal Turn On Time (ton): 38 ns

Fast turn-on time enhances the switching speed of the IGBT, allowing for efficient power control and reducing power loss.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH40N60B2D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

390 ns

Nominal Turn On Time (ton):

38 ns

Trade Compliance

IXGH40N60B2D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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