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IXGH100N30B3

Littelfuse

IXGH100N30B3 by Littelfuse

IXGH100N30B3 by Littelfuse is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 1.7V, Nominal Turn Off Time of 143ns, and Max Collector Current of 75A. With a Max Operating Temperature of 150°C, it is ideal for high-power electronic systems requiring efficient power control.

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Vyrian

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Nova Conductors

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Aztec Data Supply Inc.

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Corohmni

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Andel Nordic

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AZTECH Wire

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Continental Prestige Electronics

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Argo Parts USA

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Glotronic Ltd.

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Overview

Enhance the performance of your power control applications with the Littelfuse IXGH100N30B3 Insulated Gate Bipolar Transistor. Designed for high efficiency and reliability, this N-CHANNEL transistor offers a maximum VCEsat of 1.7V and a maximum Collector-Emitter Voltage of 300V, making it perfect for demanding industrial environments. With a maximum Power Dissipation of 460W and fast switching times, this transistor ensures optimized power control. Trust Littelfuse's reputation for quality and innovation to deliver the best solutions for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower ON-state resistance and higher switching speeds compared to P-channel transistors, making them suitable for power control applications.

Maximum VCEsat: 1.7 V

The low saturation voltage of 1.7V helps in reducing power losses and increasing efficiency in power control applications.

Nominal Turn Off Time (toff): 143 ns

The fast turn-off time of 143 ns allows for quick switching operations, which is essential for power control applications.

Maximum Power Dissipation (Abs): 460 W

With a high power dissipation capability of 460W, this IGBT can handle demanding power control tasks effectively.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the IGBT can operate reliably in harsh environments without overheating.

Maximum Collector-Emitter Voltage: 300 V

The high collector-emitter voltage of 300V allows the IGBT to handle high voltage applications efficiently.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage of 20V ensures safe and reliable operation of the IGBT without damaging the gate insulation.

Maximum Collector Current (IC): 75 A

The high collector current rating of 75A enables the IGBT to handle large current loads in power control applications.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides good solderability and ensures reliable electrical connections.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH100N30B3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

143 ns

Nominal Turn On Time (ton):

78 ns

Maximum VCEsat:

1.7 V

Trade Compliance

IXGH100N30B3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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