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IXGR40N60C2D1

IXYS Corporation

IXGR40N60C2D1 by IXYS Corporation

IXGR40N60C2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 56A max collector current, and 210ns turn-off time. Ideal for power control applications due to its single configuration with built-in diode and silicon transistor element material.

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Overview

Experience the cutting-edge technology of the IXGR40N60C2D1 by IXYS Corporation, a top-tier manufacturer of Insulated Gate Bipolar Transistors (IGBT). Designed for power control applications, this N-CHANNEL transistor with a built-in diode offers unparalleled performance and reliability. With a maximum collector-emitter voltage of 600V and a nominal turn-off time of 210ns, this transistor is a game-changer in the industry. Trust IXYS Corporation to deliver quality products that meet your needs and exceed your expectations. Elevate your projects with the IXGR40N60C2D1 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, increasing the reliability and durability of the IGBT.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-state voltage drop and higher efficiency compared to P-Channel IGBTs, making them a better choice for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier and more efficient circuit design, reducing the need for external components and simplifying the overall system.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and reliability in controlling high power loads.

Maximum Collector Current (IC): 56 A

With a high maximum collector current rating, this IGBT can handle large amounts of current, making it suitable for high-power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGR40N60C2D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

210 ns

Nominal Turn On Time (ton):

38 ns

Trade Compliance

IXGR40N60C2D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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