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IXGN60N60C2D1

IXYS Corporation

IXGN60N60C2D1 by IXYS Corporation

IXYS Corporation's IXGN60N60C2D1 is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 75A, and Pmax of 480W. Ideal for power control applications due to its fast turn-off time (toff) of 210ns and high operating temperature up to 150°C. The device features a built-in diode, UL recognized, and is flange mountable for efficient heat dissipation.

Median Price

$62.000

Lifecycle Status

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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Vyrian

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Nova Conductors

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ACDS - Activité Composants Distribution Service

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Andel Nordic

Denmark . 211 parts In-Stock

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AZTECH Wire

Italy . 871 parts In-Stock

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Microchip USA

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Perfect Parts

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Glotronic Ltd.

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Benley Electronics

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Overview

Unlock the power of efficient energy management with the IXGN60N60C2D1 by IXYS Corporation. This Insulated Gate Bipolar Transistor (IGBT) offers top-notch quality and reliability, making it a trusted choice for power control applications. With a maximum VCEsat of 2.5V and a maximum operating temperature of 150°C, this N-CHANNEL transistor ensures optimal performance and durability. Whether you're looking to enhance your industrial processes or improve your renewable energy systems, the IXGN60N60C2D1 provides the value, benefits, and advantages you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-resistance and higher efficiency compared to P-Channel types, making them suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient reverse recovery and protects the circuit from voltage spikes, enhancing the overall performance of the IGBT.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT can effectively handle high power dissipation and provide reliable performance.

Maximum VCEsat: 2.5 V

The low saturation voltage helps minimize power loss and improve efficiency in power control circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into various electronic systems.

Nominal Turn Off Time (toff): 210 ns

The fast turn-off time ensures quick switching and reduces the power loss during operation.

Maximum Power Dissipation (Abs): 480 W

With a high power dissipation capacity, this IGBT can handle heavy loads and provide reliable performance in power control applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure and stable mounting of the IGBT in electronic systems.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes this IGBT suitable for use in various environments and ensures reliable performance under different conditions.

Maximum Collector-Emitter Voltage: 600 V

The high collector-emitter voltage rating allows for safe operation in high voltage circuits and applications.

Transistor Element Material: SILICON

Silicon material offers reliable performance, low power loss, and high switching speed, making it a preferred choice for power control applications.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage rating ensures safe operation and protection of the IGBT during high voltage transients.

Maximum Collector Current (IC): 75 A

With a high collector current rating, this IGBT can handle heavy loads and provide efficient power control in various applications.

Terminal Finish: NICKEL

Nickel terminal finish offers good conductivity and corrosion resistance, ensuring reliable connections in electronic systems.

Terminal Position: UPPER

The upper terminal position allows for easy and secure connections in electronic circuits.

Case Connection: ISOLATED

The isolated case connection reduces the risk of short circuits and enhances the safety of the IGBT during operation.

Nominal Turn On Time (ton): 43 ns

The fast turn-on time helps improve the efficiency of power control circuits and ensures quick response during switching.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that the IGBT meets high quality and safety standards, making it a reliable choice for various applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGN60N60C2D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

210 ns

Nominal Turn On Time (ton):

43 ns

Maximum VCEsat:

2.5 V

Trade Compliance

IXGN60N60C2D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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