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IXGR32N170AH1

IXYS Corporation

IXGR32N170AH1 by IXYS Corporation

IXGR32N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V VCE, 26A IC, and 107ns ton. Ideal for power control applications, it features a built-in diode, isolated case connection, and UL recognition.

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Vyrian

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Nova Conductors

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Fibra_Brandt Electronic GMBH

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AZTECH Wire

Italy . 160 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,758 parts In-Stock

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Aranea Global

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Overview

Unlock the power of efficient and reliable power control with the IXGR32N170AH1 Insulated Gate Bipolar Transistor by IXYS Corporation. With a single configuration and built-in diode, this N-channel transistor is designed for high-performance applications. Its durable plastic/epoxy package and UL recognized standard ensure top-notch quality and safety. Experience fast turn-off and turn-on times, along with a maximum collector-emitter voltage of 1700V and a collector current of 26A. Trust IXYS Corporation to deliver superior products that meet your power control needs with precision and effectiveness.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IGBT.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the IGBT package.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 1700 V

Capable of handling high voltage levels, suitable for demanding applications.

Maximum Collector Current (IC): 26 A

High current rating allows for efficient power handling in the circuit.

Nominal Turn Off Time (toff): 370 ns

Fast turn-off time helps in reducing power loss and improving efficiency.

Nominal Turn On Time (ton): 107 ns

Fast turn-on time ensures quick response in power control applications.

Reference Standard: UL RECOGNIZED

Compliance with UL standards ensures safety and reliability of the product.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGR32N170AH1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

370 ns

Nominal Turn On Time (ton):

107 ns

Trade Compliance

IXGR32N170AH1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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