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IXGT16N170AH1

IXYS Corporation

IXGT16N170AH1 by IXYS Corporation

IXGT16N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 16A max collector current, and 190W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 330ns and built-in diode configuration.

Median Price

$21.600

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 30 parts In-Stock

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$21.600

100+ parts

$20.768

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$20.768

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Vyrian

USA . 3,287 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Ampacity Inc.

Singapore . 1,321 parts In-Stock

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$1.050

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$1.050

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Advanced Electronics

New Zealand . 39 parts In-Stock

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$1.175

100+ parts

$1.069

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$0.964

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39

$1.175

$1.069

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AZTECH Wire

Italy . 568 parts In-Stock

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$12.930

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568

$12.930

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Enhance your motor control systems with the IXGT16N170AH1 Insulated Gate Bipolar Transistor from IXYS Corporation. This N-CHANNEL transistor with a built-in diode offers superior performance and reliability, making it ideal for a wide range of applications. With a maximum collector-emitter voltage of 1700V and a maximum collector current of 16A, this transistor provides efficient power dissipation of up to 190W. Trust in IXYS Corporation's reputation for quality and innovation, and experience the value and benefits that the IXGT16N170AH1 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the IGBT, increasing durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and higher efficiency compared to P-channel types.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easier circuit design and can protect against reverse voltage events.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and efficiency.

Surface Mount: YES

Ease of installation and space-saving design make it suitable for compact electronic devices.

Maximum Fall Time (tf): 150 ns

Fast fall time helps in reducing switching losses and improving efficiency of the IGBT.

Nominal Turn Off Time (toff): 330 ns

A relatively low turn off time allows for efficient switching and operation of the IGBT.

Maximum Power Dissipation (Abs): 190 W

High power dissipation capability ensures the IGBT can handle demanding applications with ease.

Maximum Collector-Emitter Voltage: 1700 V

High maximum voltage rating allows for use in high voltage applications such as power electronics.

Maximum Collector Current (IC): 16 A

The high maximum collector current rating enables the IGBT to handle high current loads reliably.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGT16N170AH1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Fall Time (tf):

150 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-268AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

330 ns

Nominal Turn On Time (ton):

97 ns

Trade Compliance

IXGT16N170AH1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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