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IXGT72N60A3

Littelfuse

IXGT72N60A3 by Littelfuse

IXGT72N60A3 by Littelfuse is an N-CHANNEL IGBT for POWER CONTROL applications. With VCEsat of 1.35V, IC of 75A, and Ptot of 540W, it operates at -55 to 150°C. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.

Median Price

$9.831

Lifecycle Status

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11

In-Stock Inventory

1k+

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Verical

USA . 150 parts In-Stock

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$10.152

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$8.658

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$10.152

$8.658

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DigiKey

USA . 306 parts In-Stock

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$15.520

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$9.535

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$8.155

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306

$15.520

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$8.155

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Mouser Electronics

USA . 5 parts In-Stock

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$15.520

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$8.150

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5

$15.520

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$8.150

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Future Electronics

Canada . 600 parts In-Stock

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$9.160

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$9.000

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Arrow

USA . 150 parts In-Stock

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$8.790

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$8.688

150

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$8.688

Chip1Stop

Japan . 150 parts In-Stock

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$9.510

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$9.430

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$9.510

$9.430

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Distributors (In-Stock)

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TME

Poland . 3 parts In-Stock

1+ parts

$14.120

100+ parts

$10.170

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Ack Elektronik San.Tic.Ltd.Sti

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NAC Semi

USA . 240 parts In-Stock

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$15.630

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$14.430

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$14.430

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Nova Conductors

Japan . 43 parts In-Stock

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Rutronik

Germany . 30 parts In-Stock

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$12.090

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$10.930

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$12.090

$10.930

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Distributors (Availability)

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Component Stockers USA

USA . 68 parts In-Stock

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$10.930

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Microchip USA

USA . 10,000 parts In-Stock

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$33.376

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Argo Parts USA

USA . 5,291 parts In-Stock

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Continental Prestige Electronics

USA . 1,290 parts In-Stock

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Aranea Global

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Perfect Parts

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Authorized Procurement Solutions

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Overview

Discover the incredible performance and reliability of the IXGT72N60A3 by Littelfuse, a leading manufacturer in the industry. This Insulated Gate Bipolar Transistor (IGBT) is ideal for power control applications, offering a single configuration with N-CHANNEL polarity. With a maximum VCEsat of 1.35V and a maximum collector current of 75A, this transistor provides exceptional power dissipation of up to 540W. Whether you're looking for efficient power control solutions or high-quality components, the IXGT72N60A3 delivers on both fronts, making it a valuable choice for your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the IGBT lightweight and durable, making it easier to handle and install in various electronics applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and higher efficiency, making them suitable for power control applications where minimizing power losses is important.

Configuration: SINGLE

The single configuration simplifies the design and integration process, making it easier to use in power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for efficient and reliable performance in controlling power in various electronic devices.

Maximum VCEsat: 1.35 V

The low maximum collector-emitter saturation voltage helps in reducing power losses and improving overall efficiency of the device.

Terminal Form: GULL WING

The gull wing terminal form allows for easy surface mounting of the IGBT, making it suitable for automated assembly processes.

Maximum Power Dissipation (Abs): 540 W

With a high maximum power dissipation, this IGBT can handle high power levels without overheating, ensuring reliable operation in power control applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows the IGBT to withstand elevated temperatures, making it suitable for use in harsh environments.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage rating enables the IGBT to handle high voltage levels, making it suitable for high-power applications.

Maximum Gate-Emitter Voltage: 20 V

The high maximum gate-emitter voltage rating provides a wide margin of safety, ensuring reliable operation and protection against voltage spikes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for lead-free soldering, making it compliant with RoHS regulations and environmentally friendly.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGT72N60A3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-268AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

885 ns

Nominal Turn On Time (ton):

61 ns

Maximum VCEsat:

1.35 V

Trade Compliance

IXGT72N60A3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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