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IXGT10N170

Littelfuse

IXGT10N170 by Littelfuse

IXGT10N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 20A max collector current, and 110W max power dissipation. Ideal for power control applications, it features a single configuration in a rectangular package with gull wing terminals for surface mount assembly.

Median Price

$17.500

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 780 parts In-Stock

1+ parts

$17.500

100+ parts

$10.865

1k+ parts

$9.518

10k+ parts

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780

$17.500

$10.865

$9.518

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Mouser Electronics

USA . 30 parts In-Stock

1+ parts

$17.500

100+ parts

-

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$9.520

10k+ parts

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30

$17.500

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$9.520

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 221 parts In-Stock

1+ parts

$9.610

100+ parts

$7.470

1k+ parts

-

10k+ parts

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221

$9.610

$7.470

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Ampacity Inc.

Singapore . 420 parts In-Stock

1+ parts

$11.590

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420

$11.590

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Microchip USA

USA . 7,790 parts In-Stock

1+ parts

$28.252

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7,790

$28.252

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iodParts Technologies Inc.

India . 7,238 parts In-Stock

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7,238

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Aranea Global

USA . 100 parts In-Stock

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100

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Perfect Parts

USA . 10 parts In-Stock

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Overview

Experience the next level of power control with the Littelfuse IXGT10N170 Insulated Gate Bipolar Transistor (IGBT). This single N-channel transistor offers a maximum collector-emitter voltage of 1700V and a maximum power dissipation of 110W, making it perfect for high-power applications. Its small outline package with gull wing terminals ensures easy installation, while the silicon element material guarantees reliability and durability. Trust Littelfuse's reputation for quality and innovation to deliver exceptional performance. Upgrade your power control systems today with the IXGT10N170 and unlock a new world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic and epoxy material provides a lightweight and durable package, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have higher mobility of charge carriers and lower on-state resistance compared to P-channel, making them more efficient for power control applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces the chances of errors, making it easier to integrate into systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable and efficient performance in managing power flow.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying manufacturing processes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT can withstand elevated temperatures without affecting its performance, suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 1700 V

The high collector-emitter voltage rating allows for handling large voltage levels, making it suitable for high-power applications.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage ensures safe operation within specified limits, protecting the transistor from potential damage.

Maximum Collector Current (IC): 20 A

With a high collector current rating, this IGBT can handle significant current loads, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

The gate-emitter threshold voltage determines the turn-on behavior of the transistor, ensuring precise control and efficient power management.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGT10N170 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-268AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

630 ns

Nominal Turn On Time (ton):

300 ns

Trade Compliance

IXGT10N170 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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