Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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FF600R12ME4AB11BOSA1
Infineon Technologies
Infineon Technologies' FF600R12ME4AB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it offers high power dissipation up to 3350W. With fast turn-off time (toff) of 620ns and turn-on time (ton) of 230ns, this UL RECOGNIZED transistor operates b/w -40°C to 150°C efficiently.
ISOLATED
950 A
1200 V
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.4 V
20 V
R-XUFM-X11
2
11
150 Cel
-40 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
3350 W
UL RECOGNIZED
NO
UPPER
POWER CONTROL
SILICON
620 ns
230 ns
2.1 V
FS215R04A1E3DBOMA1
Infineon's FS215R04A1E3DBOMA1 is an N-Channel IGBT with VCEsat of 1.7V, toff of 340ns, and Pmax of 715W. Ideal for high-power applications requiring a max VCE of 400V, such as motor drives and renewable energy systems. Operating temperatures range from -40°C to 150°C.
290 A
400 V
6.5 V
N-Channel
715 W
340 ns
150 ns
1.7 V
FS400R07A1E3H5BPSA1
N-Channel; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 500 A; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel; Nominal Turn Off Time (toff): 580 ns;
500 A
650 V
750 W
580 ns
200 ns
1.9 V
FS600R07A2E3B31BOSA1
N-Channel; Maximum Power Dissipation (Abs): 1300 W; Maximum Collector Current (IC): 530 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 1.5 V; Maximum Collector-Emitter Voltage: 650 V;
530 A
1300 W
540 ns
190 ns
1.5 V
FS800R07A2E3B31BOSA1
Infineon's FS800R07A2E3B31BOSA1 is an N-Channel IGBT with VCEsat of 1.5V, toff of 620ns, and Pmax of 1550W. Ideal for high-power applications like industrial motor drives due to its max VCE of 650V, IC of 700A, and operating temp range from -40°C to 150°C.
700 A
1550 W
FZ1600R17HP4B2BOSA2
N-Channel; Maximum Power Dissipation (Abs): 10500 W; Maximum VCEsat: 2.25 V; Nominal Turn Off Time (toff): 1710 ns; Case Connection: ISOLATED; Nominal Turn On Time (ton): 805 ns;
1700 V
1
10500 W
1710 ns
805 ns
2.25 V
FZ1800R17HP4B29BOSA2
N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 2.25 V;
11500 W
1860 ns
880 ns
FZ3600R17HP4B2BOSA2
N-Channel; Maximum Power Dissipation (Abs): 19500 W; Nominal Turn Off Time (toff): 2095 ns; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum VCEsat: 2.25 V; Maximum Operating Temperature: 150 Cel;
19500 W
2095 ns
945 ns
STGB25N40LZAG
STMicroelectronics
STGB25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.25V, IC of 25A, and Ptot of 150W. Ideal for automotive ignition applications due to its built-in TVS diode and resistor. Operates b/w -55°C to 175°C temperature range, meeting AEC-Q101 standards.
COLLECTOR
25 A
435 V
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
16 V
TO-263AB
R-PSSO-G2
175 Cel
-55 Cel
PLASTIC/EPOXY
SMALL OUTLINE
150 W
AEC-Q101
YES
GULL WING
SINGLE
AUTOMOTIVE IGNITION
14500 ns
4560 ns
1.25 V
RGT50TM65DGC9
ROHM
ROHM's RGT50TM65DGC9 is an N-CHANNEL IGBT with 650V VCE, 21A IC, and 65ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode and fast turn-off time of 210ns. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
21 A
SINGLE WITH BUILT-IN DIODE
TO-220AB
R-PSFM-T3
e3
3
TIN
THROUGH-HOLE
210 ns
65 ns
RGTV60TS65DGC11
ROHM's RGTV60TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and fast turn-off time of 201ns. Suitable for use in various electronic devices requiring efficient power management.
60 A
TO-247
201 ns
45 ns
NXH80T120L2Q0S2G
Onsemi
NXH80T120L2Q0S2G by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 67A IC, and 158W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 293ns and high operating temperature range (-40 to 150 °C).
RC-IGBT
67 A
COMPLEX
R-XUFM-X20
4
20
158 W
293 ns
88 ns
2.85 V
IRG4BC30S-STRLP
IRG4BC30S-STRLP by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 34A. It has a Nominal Turn Off Time of 1550ns and Nominal Turn On Time of 40ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals, suitable for surface mount assembly in various electronic devices.
34 A
600 V
1550 ns
40 ns
BSM400GA120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 550 A; Nominal Turn On Time (ton): 210 ns; Package Body Material: UNSPECIFIED;
550 A
R-XUFM-X5
5
630 ns
FS3L30R07W2H3FB11BPSA2
Infineon Technologies' FS3L30R07W2H3FB11BPSA2 is an N-CHANNEL IGBT with 12 elements, 32 terminals, and a max. collector-emitter voltage of 650V. It has a complex configuration for power control applications, offering a nominal turn-off time of 350ns and max. collector current of 45A. The transistor's silicon material and UL approval make it suitable for high-power systems requiring fast switching capabilities.
45 A
R-XUFM-X32
12
32
UL APPROVED
350 ns
FS3L50R07W2H3B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn On Time (ton): 84 ns; JESD-30 Code: R-XUFM-X32;
75 A
346 ns
84 ns
FZ1200R12HP4HOSA2
FZ1200R12HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements, max. collector-emitter voltage of 1200V, and max. collector current of 4930A. It has a complex configuration for power control applications, with nominal turn-off time of 1550ns and turn-on time of 890ns. The package style is flange mount with isolated case connection.
4930 A
R-XUFM-X9
9
890 ns
FZ1200R17HP4B2BOSA2
FZ1200R17HP4B2BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It has a complex configuration, 1810ns turn-off time, and 850ns turn-on time. Ideal for power control applications, this transistor features a plastic/epoxy package body material and flange mount style for isolated case connection.
R-PUFM-X7
7
1810 ns
850 ns
FZ1200R17HP4HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; JESD-30 Code: R-XUFM-X4; Terminal Form: UNSPECIFIED;
1200 A
R-XUFM-X4
960 ns
FZ1600R12HP4HOSA2
FZ1600R12HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 4930A max collector current. It has a complex configuration, 3 elements, and is used for power control applications. With a turn off time of 1550ns and turn on time of 890ns, it offers efficient performance in high-power systems.
FZ1600R17HP4HOSA2
FZ1600R17HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It features a complex configuration and 2095ns nominal turn off time, making it ideal for power control applications. The transistor element is made of silicon and comes in a rectangular package style with flange mount for isolated case connection.
R-XUFM-X3
1075 ns
FZ1800R12HP4B9HOSA2
FZ1800R12HP4B9HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements in parallel configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 2700A, making it ideal for power control applications. With a nominal turn-off time of 1330ns and turn-on time of 720ns, this IGBT is designed for efficient switching operations.
2700 A
PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE
1330 ns
720 ns
FZ1800R17HP4B9HOSA2
Infineon's FZ1800R17HP4B9HOSA2 IGBT features N-CHANNEL polarity, 1700V max. collector-emitter voltage, and 1860ns nominal turn-off time. Ideal for power control applications, this complex-configured transistor with 3 elements is designed for flange mount installation in isolated case connections.
900 ns
FZ2400R12HP4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 3550 A; Nominal Turn On Time (ton): 880 ns; Maximum Collector-Emitter Voltage: 1200 V;
3550 A
1440 ns
FZ2400R12HP4HOSA2
Infineon's FZ2400R12HP4HOSA2 IGBT features N-CHANNEL polarity, 2 elements with built-in diode in a common gate configuration. Ideal for power control applications, it offers a max collector-emitter voltage of 1200V and a max collector current of 3460A. With nominal turn-off time of 1440ns and turn-on time of 880ns, this rectangular package with flange mount is designed for isolated case connection.
3460 A
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
FZ2400R17HP4B29BOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 1800 ns; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
1800 ns
665 ns
FZ2400R17HP4B2BOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Moisture Sensitivity Level (MSL): 1; Terminal Form: UNSPECIFIED;
930 ns
FZ2400R17HP4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 1700 V; Case Connection: ISOLATED;
760 ns
FZ2400R17HP4HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2400 A; No. of Elements: 2; Transistor Element Material: SILICON;
2400 A
1010 ns
FZ3600R12HP4HOSA2
FZ3600R12HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements, 1200V max collector-emitter voltage, and 4930A max collector current. It is used for power control applications due to its complex configuration and silicon transistor element material. The device has a nominal turn off time of 1550ns and a turn on time of 890ns, making it suitable for high-power operations.
FZ3600R17HP4HOSA2
FZ3600R17HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements, max. Vce of 1700V, and ton of 1075ns. It is used for POWER CONTROL applications due to its complex configuration and isolated case connection in a rectangular package style.
IGZ100N65H5XKSA1
IGZ100N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 161A IC, and 485ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration and fast switching times. Package style is FLANGE MOUNT with THROUGH-HOLE terminals for easy installation.
161 A
R-PSFM-T4
485 ns
IHW40N65R5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Transistor Application: POWER CONTROL; No. of Elements: 1;
80 A
321 ns
59 ns
IKU10N60RXK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Case Connection: COLLECTOR; Maximum Collector-Emitter Voltage: 600 V;
20 A
TO-251
R-PSIP-T3
IN-LINE
428 ns
24 ns
IKW75N65EL5XKSA1
IKW75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 474ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. The transistor has a RECTANGULAR shape with THROUGH-HOLE terminals for FLANGE MOUNT installation.
474 ns
53 ns
IKZ50N65ES5XKSA1
IKZ50N65ES5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 366ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
366 ns
60 ns
FF600R12ME4CPBPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1060 A; Package Body Material: UNSPECIFIED; No. of Elements: 2;
1060 A
710 ns
300 ns
FP100R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 620 ns; Maximum Operating Temperature: 150 Cel; Nominal Turn On Time (ton): 210 ns;
R-XUFM-X35
35
FP25R12W2T4PBPSA1
FP25R12W2T4PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 39A. It is used for power control applications due to its complex configuration and nominal turn off time of 685ns. The transistor's package style is flange mount with a rectangular shape and isolated case connection.
39 A
685 ns
133 ns
FP35R12W2T4PBPSA1
Infineon Technologies' FP35R12W2T4PBPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 54A, and max. collector-emitter voltage of 1200V. Ideal for power control applications, it features a nominal turn on time of 43ns and a nominal turn off time of 510ns at a max operating temperature of 175°C.
54 A
R-XUFM-X23
23
510 ns
43 ns
FS100R12KT4PBPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Terminal Form: UNSPECIFIED; Package Body Material: UNSPECIFIED;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X25
6
25
490 ns
185 ns
FS150R12KT4PBPSA1
Infineon FS150R12KT4PBPSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn off time of 605ns. Ideal for applications requiring high power efficiency in industrial systems operating up to 150°C.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
605 ns
165 ns
FS200R07A1E3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 250 A; Transistor Element Material: SILICON; Transistor Application: POWER CONTROL;
250 A
R-XUFM-X13
13
120 ns
FS200R12KT4RPBPSA1
Infineon's FS200R12KT4RPBPSA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and silicon material composition.
280 A
600 ns
FS3L50R07W2H3FB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Style (Meter): FLANGE MOUNT; Transistor Application: POWER CONTROL;
FS800R07A2E3BOSA4
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; No. of Elements: 6; Transistor Application: POWER CONTROL;
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X33
33
690 ns
FZ1800R12HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2735 A; Nominal Turn Off Time (toff): 1160 ns; JESD-30 Code: R-PUFM-X9;
2735 A
R-PUFM-X9
1160 ns
FZ1800R17HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Nominal Turn On Time (ton): 900 ns; Nominal Turn Off Time (toff): 1920 ns;
1920 ns
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