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IGZ100N65H5XKSA1

Infineon Technologies

IGZ100N65H5XKSA1 by Infineon Technologies

IGZ100N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 161A IC, and 485ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration and fast switching times. Package style is FLANGE MOUNT with THROUGH-HOLE terminals for easy installation.

Median Price

$4.118

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11

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1k+

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Arrow

USA . 6 parts In-Stock

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$3.856

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6

$3.856

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Chip1Stop

Japan . 160 parts In-Stock

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$3.860

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160

$3.860

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Farnell

UK . 232 parts In-Stock

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$6.460

100+ parts

$2.840

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232

$6.460

$2.840

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DigiKey

USA . 248 parts In-Stock

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$8.690

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$5.659

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248

$8.690

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$5.659

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Rochester

USA . 1,490 parts In-Stock

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$3.500

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$3.130

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$2.940

1,490

-

$3.500

$3.130

$2.940

Verical

USA . 1,418 parts In-Stock

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-

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$4.375

1k+ parts

$3.913

10k+ parts

$3.675

1,418

-

$4.375

$3.913

$3.675

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Digiode

USA . 787 parts In-Stock

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$3.638

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787

$3.638

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Nova Conductors

Japan . 27 parts In-Stock

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$4.756

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27

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Vyrian

USA . 5,579 parts In-Stock

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DigiKey Marketplace

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Rutronik

Germany . 90 parts In-Stock

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$4.900

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$4.440

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90

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$0.834

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$0.752

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270

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$0.834

$0.752

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Modulus Dynamics

Lithuania . 6,993 parts In-Stock

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$0.962

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$0.924

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$0.885

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6,993

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Ampacity Inc.

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$3.290

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Corphita

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472

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Component Stockers USA

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$4.480

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$4.220

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$3.810

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2,302

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$3.810

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Netroflash

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$4.518

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$4.423

2,000

$4.756

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$4.518

$4.423

Microchip USA

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$28.275

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2,194

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Andel Nordic

Denmark . 331 parts In-Stock

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$30.550

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$21.387

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$21.387

331

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$21.387

$21.387

QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Perfect Parts

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iodParts Technologies Inc.

India . 274 parts In-Stock

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Overview

Unleash the power of the IGZ100N65H5XKSA1 by Infineon Technologies, a top-of-the-line Insulated Gate Bipolar Transistor designed for high-performance power control applications. Crafted with precision and expertise by Infineon Technologies, this N-CHANNEL transistor offers unparalleled quality and reliability. With a maximum collector-emitter voltage of 650V and a maximum collector current of 161A, this IGBT is a game-changer in the industry. Elevate your projects with the superior performance and efficiency of the IGZ100N65H5XKSA1, delivering unmatched value and benefits to customers across various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection for the IGBT, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer lower conduction losses and faster switching speeds, making them well-suited for high-power and high-frequency applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the IGBT easy to integrate into different power control systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT ensures efficient and reliable performance in regulating and managing power output.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement in compact spaces, making it ideal for use in equipment with limited room.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and stable connection, ensuring reliable performance in various operating conditions.

Nominal Turn Off Time (toff): 485 ns

The fast turn-off time of 485 ns enhances efficiency and minimizes power loss during operation, making the IGBT suitable for high-speed switching applications.

No. of Terminals: 4

With 4 terminals, this IGBT offers multiple connection points for flexible circuit configurations and better control over power distribution.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting, ensuring the IGBT stays in place even under high-vibration environments.

Maximum Collector-Emitter Voltage: 650 V

With a maximum voltage rating of 650 V, this IGBT can handle high-voltage applications with ease, making it a reliable choice for power control systems.

Transistor Element Material: SILICON

Silicon is a durable and reliable material for transistor elements, ensuring stable performance and longer lifespan for the IGBT.

Maximum Collector Current (IC): 161 A

The high collector current rating of 161 A allows for efficient power handling, making this IGBT suitable for high-power applications.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and a reliable electrical connection, enhancing the durability and longevity of the IGBT.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making it easy to integrate the IGBT into different power control systems.

Case Connection: COLLECTOR

The collector case connection ensures efficient heat dissipation and improved thermal management, enhancing the overall performance and reliability of the IGBT.

Nominal Turn On Time (ton): 40 ns

The fast turn-on time of 40 ns allows for quick response and precise control over power output, making this IGBT ideal for high-speed switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGZ100N65H5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

485 ns

Nominal Turn On Time (ton):

40 ns

Trade Compliance

IGZ100N65H5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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