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IKZ50N65ES5XKSA1

Infineon Technologies

IKZ50N65ES5XKSA1 by Infineon Technologies

IKZ50N65ES5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 366ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

Median Price

$2.984

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 234 parts In-Stock

1+ parts

$7.400

100+ parts

$3.570

1k+ parts

$3.170

10k+ parts

$2.810

234

$7.400

$3.570

$3.170

$2.810

Rochester

USA . 240 parts In-Stock

1+ parts

-

100+ parts

$2.450

1k+ parts

$2.190

10k+ parts

$2.060

240

-

$2.450

$2.190

$2.060

DigiKey

USA . 240 parts In-Stock

1+ parts

-

100+ parts

$3.230

1k+ parts

-

10k+ parts

-

240

-

$3.230

-

-

Verical

USA . 240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.737

10k+ parts

$2.575

240

-

-

$2.737

$2.575

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 336 parts In-Stock

1+ parts

$2.822

100+ parts

-

1k+ parts

-

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336

$2.822

-

-

-

Nova Conductors

Japan . 31 parts In-Stock

1+ parts

$4.468

100+ parts

-

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31

$4.468

-

-

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Vyrian

USA . 8,101 parts In-Stock

1+ parts

-

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8,101

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 140 parts In-Stock

1+ parts

$2.520

100+ parts

-

1k+ parts

-

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-

140

$2.520

-

-

-

Corphita

USA . 748 parts In-Stock

1+ parts

$2.673

100+ parts

-

1k+ parts

-

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748

$2.673

-

-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$4.468

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

$4.468

-

-

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Modulus Dynamics

Lithuania . 5,779 parts In-Stock

1+ parts

$4.485

100+ parts

$4.306

1k+ parts

$4.126

10k+ parts

-

5,779

$4.485

$4.306

$4.126

-

Continental Prestige Electronics

USA . 39 parts In-Stock

1+ parts

$5.180

100+ parts

$3.190

1k+ parts

$2.420

10k+ parts

-

39

$5.180

$3.190

$2.420

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AZTECH Wire

Italy . 237 parts In-Stock

1+ parts

$19.680

100+ parts

-

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237

$19.680

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Microchip USA

USA . 4,361 parts In-Stock

1+ parts

$22.100

100+ parts

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4,361

$22.100

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Perfect Parts

USA . 1,346 parts In-Stock

1+ parts

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1,346

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Overview

Enhance your power control applications with the IKZ50N65ES5XKSA1 from Infineon Technologies. This Insulated Gate Bipolar Transistor offers superior quality and reliability, backed by a trusted manufacturer. With its N-CHANNEL configuration and built-in diode, this transistor provides efficient power control solutions. Whether you're in the automotive industry or working on industrial machinery, this IGBT delivers exceptional performance and value to meet your needs. Upgrade to the IKZ50N65ES5XKSA1 for enhanced functionality and peace of mind in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, increasing durability and longevity of the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and performance in applications where N-Channel devices are preferred.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and reduces the need for additional components, making the product more cost-effective and space-efficient.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable and efficient performance in such scenarios.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuit boards or systems, promoting convenient installation and maintenance.

Terminal Form: THROUGH-HOLE

Enables straightforward soldering and connection to PCBs, enhancing the ease of assembly and ensuring secure connections.

Nominal Turn Off Time (toff): 366 ns

Provides fast turn-off time, allowing for precise control and switching of power signals in time-sensitive applications.

No. of Terminals: 4

Offers multiple connection points for versatile usage and compatibility with various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Facilitates secure mounting and heat dissipation, maintaining optimal performance and reliability under demanding conditions.

Maximum Collector-Emitter Voltage: 650 V

Provides a high voltage rating, making the product suitable for applications requiring handling of high voltages.

Transistor Element Material: SILICON

Utilizes silicon technology known for its high performance and reliability, ensuring consistent operation over extended periods.

Maximum Collector Current (IC): 80 A

Supports high current ratings, making it ideal for power control applications that require handling of substantial currents.

Terminal Finish: TIN

Features a tin finish for enhanced conductivity and corrosion resistance, maintaining reliable electrical connections over time.

Terminal Position: SINGLE

Simplified terminal layout for easy installation and identification, streamlining the integration process in circuit designs.

Nominal Turn On Time (ton): 60 ns

Offers fast turn-on time for quick response and precise control in power switching applications, enhancing overall performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKZ50N65ES5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

366 ns

Nominal Turn On Time (ton):

60 ns

Trade Compliance

IKZ50N65ES5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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