Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Transistor Application: POWER CONTROL; No. of Elements: 1;
Median Price
$3.260
Lifecycle Status
Suppliers In-Stock
11
In-Stock Inventory
1k+
Farnell
1+ parts
$2.910
100+ parts
$1.340
1k+ parts
$1.260
10k+ parts
-
Mouser Electronics
$3.240
$2.200
$1.790
$1.510
Chip1Stop
$3.250
$1.750
DigiKey
$3.270
$1.771
$1.197
$1.029
Arrow
$3.593
$1.966
$1.496
Newark
$4.920
$2.900
$2.450
$1.930
Element14
$261.990
$158.240
$135.000
Verical
$1.210
$1.121
$1.110
Digiode
$2.726
TME
$3.060
$1.680
$1.390
Vyrian
Modulus Dynamics
$1.182
$1.135
$1.087
Corphita
$2.583
Continental Prestige Electronics
$2.660
$1.670
Microchip USA
$26.975
Authorized Procurement Solutions
iodParts Technologies Inc.
GreenTree Electronics
Perfect Parts
Insulated Gate Bipolar Transistors (IGBT) IHW40N65R5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
IHW40N65R5XKSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LM317T
Samsung
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;
2N7002
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
LM317TG
Texas Instruments
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
M39029/58-360
TE Connectivity
TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.
2N2222A
Gec Plessey Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
BAV99
Won-top Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDN306P
Onsemi
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
ISO1050DUBR
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
Semiconductors
CRCW04020000Z0EDHP
Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
1N4148
Dc Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Micro Commercial Components
Rectron
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
Silicon Standard
EU2B-YS2J03F
Idec
ROTARY SWITCH;
LM358N
STMicroelectronics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
USBLC6-2SC6
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
IRG4PC30FPBF
Infineon Technologies
IRG4PC30FPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 31A max collector current. It has a turn-off time of 640ns, turn-on time of 36ns, and can dissipate up to 100W power. Ideal for power control applications due to its single configuration and flange mount package style.
IRG4BC40UPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1;
APT65GP60JDQ2
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
IRG7PH42UD1PBF
IRG7PH42UD1PBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It has a power dissipation of 313W, making it suitable for power control applications requiring high voltage handling and efficient switching capabilities. With a fall time of 43ns and turn-off time of 460ns, this transistor is ideal for applications where fast switching speeds are crucial.
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 431 W; Maximum Collector Current (IC): 130 A; No. of Elements: 1;
IRG4PSH71UDPBF
Infineon's IRG4PSH71UDPBF is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 99A max collector current. It features a built-in diode, 330ns fall time, and 810ns turn off time. Ideal for power control applications with a max power dissipation of 350W at up to 150°C operating temperature.
DF160R12W2H3FB11BPSA1
Infineon's DF160R12W2H3FB11BPSA1 IGBT features N-CHANNEL polarity, 1200V max collector-emitter voltage, and 375ns nominal turn-off time. Ideal for power control applications with complex configuration, it has 4 elements and operates from -40°C with a 30-terminal flange mount package.
IGB50N60TXT
IGB50N60TXT by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. This insulated gate bipolar transistor comes in a surface-mount package with GULL WING terminals, suitable for high-power electronic systems operating at temperatures up to 175°C.
IXXX160N65B4
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 310 A; Transistor Element Material: SILICON;
IXXH50N60B3D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Nominal Turn On Time (ton): 75 ns;
FF600R12ME4B11BPSA2
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FS200R12KT4RB11BOSA1
Infineon's FS200R12KT4RB11BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and max current of 280A for power control applications. UL approved, it features a turn off time of 600ns and turn on time of 190ns in a flange mount package.
IRG4BC30SPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; No. of Elements: 1;
FGA25N120ANTDTU_NL
Fairchild Semiconductor
FGA25N120ANTDTU_NL by Fairchild Semiconductor is an N-CHANNEL IGBT with tr of 90 ns, tf of 180 ns, and Abs Pd of 312 W. It operates at a max Vce of 1200 V and can handle a max IC of 25 A. Ideal for high-power applications requiring fast switching speeds and high voltage capabilities.
FF200R12KS4HOSA1
FF200R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 275A, and turn off time of 590ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
IRGP4066D-EPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
FF600R17ME4BOSA1
Infineon Technologies' FF600R17ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1700V and max current of 950A, suitable for POWER CONTROL applications. With a toff of 980ns and ton of 320ns, it offers efficient switching in RECTANGULAR package style.
IRGP35B60PDPBF
IRGP35B60PDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max current of 60A. It has a power dissipation of 308W and is designed for power control applications, featuring a single configuration with built-in diode. With fast rise time (tr) of 11ns and fall time (tf) of 16ns, it operates at temperatures up to 150°C.
STGB14NC60KDT4
STGB14NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 80W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.
IXXH30N65B4
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 65 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): 10;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
IHW40N60RFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-247AD;
IHW40N135R3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 429 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
IHW40T120
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;
IHW40N60RFFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Transistor Element Material: SILICON; No. of Terminals: 3;
IHW40N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 305 W; Maximum Collector Current (IC): 80 A; JESD-609 Code: e3;
IHW40T120FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
IHW40N120R3FKSA1
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 429 W; Maximum Collector Current (IC): 80 A; Terminal Finish: TIN; Maximum Gate-Emitter Voltage: 20 V;
IHW40N60RXK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Maximum Operating Temperature: 175 Cel; Package Body Material: PLASTIC/EPOXY;
IHW40N135R3FKSA1
IHW40N65R5S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Nominal Turn Off Time (toff): 321 ns; JESD-30 Code: R-PSFM-T3;
IHW40N60T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 303 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 600 V;
IHW40N135R5XKSA1
IHW40N135R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1350V VCEsat and 80A IC, ideal for POWER CONTROL applications. Featuring a built-in diode, it has a max power dissipation of 394W and operates in temperatures ranging from -40 to 175°C. This RECTANGULAR transistor with THROUGH-HOLE terminals offers fast turn-off time of 700ns.
IHW40N65R6
N-Channel; Maximum Power Dissipation (Abs): 210 W; Maximum Collector Current (IC): 83 A; Nominal Turn Off Time (toff): 256 ns; Maximum Operating Temperature: 175 Cel; Nominal Turn On Time (ton): 36 ns;
IHW40N120R5XKSA1
N-Channel; Maximum Power Dissipation (Abs): 394 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 1.85 V;
IHW40N60RF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 305 W; Maximum Collector Current (IC): 80 A; Transistor Element Material: SILICON;
IHW40N120R3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 429 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 20 V;
IHW40N120R5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 394 W; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSFM-T3;
IHW40N135R5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 394 W; Maximum Collector Current (IC): 80 A; No. of Terminals: 3;
IHW40N65R5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Terminal Finish: TIN; JESD-609 Code: e3;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved