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FZ1600R12HP4HOSA2

Infineon Technologies

FZ1600R12HP4HOSA2 by Infineon Technologies

FZ1600R12HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 4930A max collector current. It has a complex configuration, 3 elements, and is used for power control applications. With a turn off time of 1550ns and turn on time of 890ns, it offers efficient performance in high-power systems.

Median Price

$674.562

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

1+ parts

$572.360

100+ parts

$538.020

1k+ parts

$503.680

10k+ parts

-

1

$572.360

$538.020

$503.680

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Verical

USA . 1 parts In-Stock

1+ parts

$776.763

100+ parts

-

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1

$776.763

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EBV Elektronik

Germany . 14 parts In-Stock

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-

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-

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14

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Distributors (In-Stock)

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Digiode

USA . 441 parts In-Stock

1+ parts

$687.164

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441

$687.164

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Nova Conductors

Japan . 16 parts In-Stock

1+ parts

$692.660

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16

$692.660

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NAC Semi

USA . 12 parts In-Stock

1+ parts

$1,485.200

100+ parts

$1,350.180

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12

$1,485.200

$1,350.180

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Vyrian

USA . 12,914 parts In-Stock

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12,914

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TME

Poland . 15 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 242 parts In-Stock

1+ parts

$0.354

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242

$0.354

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Modulus Dynamics

Lithuania . 20,463 parts In-Stock

1+ parts

$0.888

100+ parts

$0.852

1k+ parts

$0.817

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-

20,463

$0.888

$0.852

$0.817

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AZTECH Wire

Italy . 589 parts In-Stock

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$8.079

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$8.079

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Ampacity Inc.

Singapore . 8 parts In-Stock

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$553.350

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8

$553.350

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Corphita

USA . 919 parts In-Stock

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$650.997

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919

$650.997

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Argo Parts USA

USA . 3,475 parts In-Stock

1+ parts

$692.660

100+ parts

$685.733

1k+ parts

$678.807

10k+ parts

$671.880

3,475

$692.660

$685.733

$678.807

$671.880

Continental Prestige Electronics

USA . 2,226 parts In-Stock

1+ parts

$692.660

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$678.807

2,226

$692.660

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$678.807

Microchip USA

USA . 4,749 parts In-Stock

1+ parts

$761.926

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4,749

$761.926

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QUARKTWIN TECHNOLOGY LTD

USA . 20,585 parts In-Stock

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20,585

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$678.807

1k+ parts

$658.027

10k+ parts

$644.174

1,000

-

$678.807

$658.027

$644.174

Overview

Discover the cutting-edge technology of the FZ1600R12HP4HOSA2 by Infineon Technologies, a leader in semiconductor manufacturing. This high-quality Insulated Gate Bipolar Transistor (IGBT) is designed for power control applications, offering exceptional performance and reliability. With its N-CHANNEL polarity, complex configuration, and 1200V maximum collector-emitter voltage, this transistor is ideal for a wide range of industrial uses. Experience the value and benefits of Infineon's innovative technology with the FZ1600R12HP4HOSA2 - powering your applications to new heights.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speed, making them ideal for power control applications.

Configuration: COMPLEX

Complex configuration allows for better control and efficiency in power applications, making this IGBT suitable for demanding power control tasks.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this IGBT offers high performance and reliability in managing power consumption effectively.

Maximum Collector-Emitter Voltage: 1200 V

With a high maximum voltage rating, this IGBT can handle high-power applications and withstand high voltage spikes, ensuring long-lasting performance.

Maximum Collector Current (IC): 4930 A

The high collector current rating allows this IGBT to handle heavy loads and deliver consistent performance in demanding power control scenarios.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FZ1600R12HP4HOSA2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JESD-30 Code:

R-XUFM-X9

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

9

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1550 ns

Nominal Turn On Time (ton):

890 ns

Trade Compliance

FZ1600R12HP4HOSA2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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