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FZ1800R17HP4B9HOSA2

Infineon Technologies

FZ1800R17HP4B9HOSA2 by Infineon Technologies

Infineon's FZ1800R17HP4B9HOSA2 IGBT features N-CHANNEL polarity, 1700V max. collector-emitter voltage, and 1860ns nominal turn-off time. Ideal for power control applications, this complex-configured transistor with 3 elements is designed for flange mount installation in isolated case connections.

Median Price

$865.237

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 30 parts In-Stock

1+ parts

$692.190

100+ parts

$650.660

1k+ parts

$609.130

10k+ parts

-

30

$692.190

$650.660

$609.130

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Verical

USA . 22 parts In-Stock

1+ parts

$865.237

100+ parts

$813.325

1k+ parts

$761.413

10k+ parts

-

22

$865.237

$813.325

$761.413

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DigiKey

USA . 30 parts In-Stock

1+ parts

$865.240

100+ parts

-

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-

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30

$865.240

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-

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Distributors (In-Stock)

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Digiode

USA . 573 parts In-Stock

1+ parts

$973.351

100+ parts

-

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-

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573

$973.351

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Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$983.560

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750

$983.560

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Vyrian

USA . 7,656 parts In-Stock

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7,656

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 21,880 parts In-Stock

1+ parts

$1.755

100+ parts

$1.685

1k+ parts

$1.615

10k+ parts

-

21,880

$1.755

$1.685

$1.615

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AZTECH Wire

Italy . 707 parts In-Stock

1+ parts

$4.927

100+ parts

-

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707

$4.927

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Ampacity Inc.

Singapore . 33 parts In-Stock

1+ parts

$870.890

100+ parts

-

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-

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33

$870.890

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-

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Corphita

USA . 900 parts In-Stock

1+ parts

$922.122

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-

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900

$922.122

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Netroflash

USA . 50 parts In-Stock

1+ parts

$983.560

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-

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50

$983.560

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Microchip USA

USA . 4,177 parts In-Stock

1+ parts

$984.060

100+ parts

-

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4,177

$984.060

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QUARKTWIN TECHNOLOGY LTD

USA . 13,659 parts In-Stock

1+ parts

-

100+ parts

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13,659

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Overview

Get ready to experience unparalleled power control with the FZ1800R17HP4B9HOSA2 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-notch quality and reliability, making this Insulated Gate Bipolar Transistor (IGBT) a game-changer in the field. Whether you're looking to optimize energy efficiency or enhance performance in your applications, this N-CHANNEL transistor with a complex configuration offers unmatched value and benefits. Elevate your power control capabilities with the FZ1800R17HP4B9HOSA2 and unlock a world of possibilities for your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs have lower on-state voltage drop and higher efficiency compared to P-CHANNEL IGBTs, making them suitable for high power applications.

Configuration: COMPLEX

Complex configuration allows for advanced control and flexibility in power control applications, making the IGBT suitable for complex system requirements.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring efficient and reliable performance in controlling high power levels.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration and mounting in various electronic systems, providing versatility in design and installation.

Nominal Turn Off Time (toff): 1860 ns

Fast turn-off time helps in reducing switching losses and improving efficiency, making the IGBT ideal for high frequency power control.

No. of Terminals: 9

Having 9 terminals provides more connectivity options and control over the device, enabling complex system configurations and functions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and connection, ensuring stability and reliability in high power applications.

Maximum Collector-Emitter Voltage: 1700 V

High maximum collector-emitter voltage rating allows for handling high voltage levels, suitable for power control applications requiring high voltage operation.

Transistor Element Material: SILICON

Silicon material provides high temperature tolerance and reliable performance, ensuring long-term stability and durability in demanding operating conditions.

Terminal Position: UPPER

Upper terminal position facilitates easy connection and integration in electronic systems, offering convenience in installation and maintenance processes.

Case Connection: ISOLATED

Isolated case connection ensures safety and protection against electrical hazards, making the IGBT suitable for high power applications where isolation is necessary.

Nominal Turn On Time (ton): 900 ns

Fast turn-on time enables quick response and efficient operation in power control applications, enhancing overall performance and system efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FZ1800R17HP4B9HOSA2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1700 V

Configuration:

JESD-30 Code:

R-XUFM-X9

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

9

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1860 ns

Nominal Turn On Time (ton):

900 ns

Trade Compliance

FZ1800R17HP4B9HOSA2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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