Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FZ1800R17HP4_B29 by Infineon Technologies is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.25V, it offers a Max Collector Current (IC) of 1800A and Max Collector-Emitter Voltage of 1700V. Its complex configuration and high power dissipation make it suitable for demanding industrial environments.
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N-channel IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.
Low VCEsat value ensures minimal power loss during operation, leading to higher efficiency and better performance.
Rectangular package shape allows for easier mounting and handling of the IGBT, making it convenient to integrate into various applications.
High power dissipation capability makes this IGBT suitable for handling high-power applications where heat dissipation is crucial.
High VCE allows for the IGBT to withstand high voltage operation, making it suitable for power control in demanding environments.
Insulated Gate Bipolar Transistors (IGBT) FZ1800R17HP4_B29 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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FZ1800R17HP4_B29 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Semtech
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
OPA2227UA
Texas Instruments
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
2N2222A
Boca Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
1N4148
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
2N7002
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
LM7805CT
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;
Space Power Electronics
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
MBRS360T3G
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
Kec
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;
General Semiconductor
Daco Semiconductor
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
Diodes Incorporated
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
Kingwell Technonlogy
SS14
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
IKD04N60RFATMA1
Infineon Technologies
IKD04N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in surface mount designs.
IRG4PH40UDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 41 A; Terminal Finish: MATTE TIN OVER NICKEL;
FGH40N60SMD-F085
FGH40N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max power dissipation of 349W. Ideal for power control applications, it features a single configuration with built-in diode and operates at temperatures up to 175°C.
FF600R12IP4BOSA1
FF600R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It is designed for POWER CONTROL applications with a max voltage of 1200V and operating temperature of 175°C. Featuring a turn-off time of 1050ns and turn-on time of 370ns, this rectangular package transistor is ideal for high-power systems.
SKM100GB125DN
Semikron International
SKM100GB125DN by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.85V, IC of 100A, and toff of 380ns. Ideal for POWER CONTROL applications, it operates up to 1200V at 150°C with UL RECOGNIZED standards compliance.
IRGP4640DPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 65 A; Maximum Fall Time (tf): 41 ns; Maximum Operating Temperature: 175 Cel;
FGAF40N60UFTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 40 A; Case Connection: ISOLATED;
AFGHL75T65SQDT
AFGHL75T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 174ns and a max power dissipation of 375W. This single configuration transistor operates b/w -55 to 175 °C, making it suitable for various industrial uses.
IXXH30N60B3D1
Littelfuse
IXXH30N60B3D1 by Littelfuse is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 1.85V VCEsat. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, RECTANGULAR shape, and 292ns turn-off time.
NXH50C120L2C2ES1G
NXH50C120L2C2ES1G by Onsemi is an IGBT transistor with 6 elements in a bridge configuration. It has a max VCEsat of 2.4V and can handle up to 50A of collector current. Ideal for power control applications, it operates b/w -40°C to 150°C temperature range.
GT20J321
Toshiba
Toshiba GT20J321 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, ideal for power control applications. It features a built-in diode, 20A max collector current (IC), and 45W max power dissipation. With a turn-off time of 340ns and turn-on time of 170ns, it offers efficient performance in high-power systems.
HGTD1N120BNS9A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5.3 A; Maximum Gate-Emitter Voltage: 20 V;
F3L75R07W2E3B11BOMA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
APT200GN60J
Microchip Technology
APT200GN60J by Microchip Technology is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 250A max collector current. It has a power dissipation of 682W, turn-off time of 1210ns, and turn-on time of 75ns. Ideal for power control applications requiring high voltage and current handling capabilities.
IXYN82N120C3H1
The Littelfuse IXYN82N120C3H1 is an N-CHANNEL IGBT with a max VCEsat of 3.2V and IC of 105A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max VCE of 1200V and can operate in temperatures ranging from -55 to 150°C.
FF1000R17IE4BOSA1
FF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max Collector-Emitter Voltage of 1700V and a Nominal Turn Off Time of 1890ns, making it ideal for POWER CONTROL applications. The transistor features a Max Collector Current of 1390A and operates at temperatures up to 175°C in a FLANGE MOUNT package style.
SKM400GB12E4
SKM400GB12E4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.05V and can handle a Max Collector Current of 618A. Ideal for POWER CONTROL applications due to its fast Nominal Turn Off Time of 681ns and high Max Collector-Emitter Voltage of 1200V.
STGW80V60DF
STMicroelectronics
STGW80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 600V collector-emitter voltage, and 120A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
IHW30N120R5XKSA1
IHW30N120R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.85V and a max collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 520ns and a max power dissipation of 330W.
SGP15N120XKSA1
SGP15N120XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 683ns toff. It's used for POWER CONTROL applications due to its SILICON material and SINGLE configuration in a PLASTIC/EPOXY package.
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FZ1800R12HP4B9HOSA2
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2700 A; JESD-30 Code: R-XUFM-X9; Transistor Element Material: SILICON;
FZ1800R12HP4B9HOSA1
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2700 A; No. of Elements: 3; Package Body Material: UNSPECIFIED;
FZ1800R17HP4B29BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 9; Nominal Turn Off Time (toff): 1860 ns;
FZ1800R12KL4CNOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2850 A; Terminal Form: UNSPECIFIED; Package Body Material: UNSPECIFIED;
FZ1800R17HE4B9NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Maximum Collector-Emitter Voltage: 1700 V;
FZ1800R12KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1800 A; Terminal Position: UPPER; Case Connection: ISOLATED;
FZ1800R17HP4B29BOSA2
N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 2.25 V;
FZ1800R12HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2735 A; Nominal Turn Off Time (toff): 1160 ns; JESD-30 Code: R-PUFM-X9;
FZ1800R16KF4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1800 A; Qualification: Not Qualified; Maximum VCEsat: 3.5 V;
FZ1800R16KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1800 A; Nominal Turn On Time (ton): 1000 ns; Peak Reflow Temperature (C): NOT SPECIFIED;
FZ1800R17HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Nominal Turn On Time (ton): 900 ns; Nominal Turn Off Time (toff): 1920 ns;
FZ1800R16KF4_S1
N-Channel; Maximum Power Dissipation (Abs): 11000 W; Maximum Collector Current (IC): 1800 A; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Collector-Emitter Voltage: 1600 V;
FZ1800R12KF4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 11000 W; Maximum Collector Current (IC): 1800 A; Terminal Form: UNSPECIFIED;
FZ1800R12HP4_B9
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10500 W; Maximum Collector Current (IC): 2700 A; Nominal Turn On Time (ton): 720 ns;
FZ1800R12KL4C
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 11400 W; Maximum Collector Current (IC): 2850 A; No. of Elements: 3;
FZ1800R12HE4_B9
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2735 A; Case Connection: ISOLATED; No. of Terminals: 9;
FZ1800R12HE4B9NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2735 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 720 ns;
FZ1800R12HP4B9NPSA1
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2700 A; Nominal Turn Off Time (toff): 1330 ns; Package Body Material: UNSPECIFIED;
FZ1800R17HE4_B9
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Application: POWER CONTROL; JESD-30 Code: R-XUFM-X9; Nominal Turn On Time (ton): 900 ns;
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