Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Application: POWER CONTROL; JESD-30 Code: R-XUFM-X9; Nominal Turn On Time (ton): 900 ns;
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Insulated Gate Bipolar Transistors (IGBT) FZ1800R17HE4_B9 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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FZ1800R17HE4_B9 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
2N7002
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
LP2950CDT-3.3G
Onsemi
LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.
BAV99
Comchip Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
General Instrument
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
National Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
2N2222A
Bharat Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
BSS84PH6327XTSA2
Infineon Technologies
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
BSS123,215
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LL4148
Synsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Bytesonic Electronics
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
Good-ark Electronics
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;
1N4148W-T
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
1N4148WS
IRG7PH42UD-EP
IRG7PH42UD-EP by Infineon is an N-channel IGBT with 1200V max collector-emitter voltage and 85A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a max power dissipation of 320W and operating temperature of 150°C, it offers fast switching times of 41ns rise, 86ns fall, and 444ns turn-off.
IXA70I1200NA
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED;
IRG4IBC20KDPBF
IRG4IBC20KDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 34W. It has a Nominal Turn Off Time of 380ns, making it ideal for POWER CONTROL applications requiring fast switching speeds and high voltage handling capabilities. The package style is FLANGE MOUNT with THROUGH-HOLE terminals, suitable for various power control systems operating up to 150°C.
NGTB60N65FL2WG
NGTB60N65FL2WG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 100A IC, and 595W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. The transistor has a turn-off time of 278ns and turn-on time of 168ns in a rectangular package with through-hole terminals.
AUIRGDC0250
AUIRGDC0250 by Infineon Technologies is an N-CHANNEL IGBT with a max fall time of 1371 ns, power dissipation of 543 W, and max operating temp of 150°C. It's ideal for high-power applications requiring a collector-emitter voltage up to 1200 V and collector current up to 141 A.
IXXH100N60B3
Littelfuse
IXXH100N60B3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 220A IC, and 830W power dissipation. Ideal for POWER CONTROL applications, it features a single configuration in a rectangular package with through-hole terminals.
FS100R12KT4GBOSA1
FS100R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a toff of 570 ns and ton of 165 ns, suitable for high-power applications. With a max voltage of 1200 V and operating temperature of 150°C, it is commonly used in power electronics for efficient energy conversion.
FGA30T65SHD
FGA30T65SHD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 60A, ideal for power control applications. It has a turn-off time of 67.2ns, operating temperature range from -55 to 175 °C, and a collector-emitter voltage of 650V. The package style is flange mount with matte tin terminal finish in a rectangular shape.
APT85GR120B2
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 962 W; Maximum Collector Current (IC): 170 A; Terminal Position: SINGLE;
IXGR32N170H1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 38 A; Package Shape: RECTANGULAR;
IKW40N65ES5XKSA1
IKW40N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 79A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 204ns and nominal turn-on time of 36ns, suitable for high-speed switching operations.
IRG4PH30KPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 20 A; Maximum Fall Time (tf): 170 ns;
IXXH75N60C3
IXXH75N60C3 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 600V. It is commonly used for power control applications due to its high power dissipation of 750W and fast nominal turn-off time of 185ns.
SKM300GB12T4
Semikron International
SKM300GB12T4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.1V, IC of 422A, and toff of 540ns. Ideal for POWER CONTROL applications, it operates b/w -40°C to 175°C with a VCE max of 1200V.
IRG4BC10SD-SPBF
IRG4BC10SD-SPBF by Infineon is an N-channel IGBT with a max VCEsat of 1.8V and IC of 14A, ideal for power control applications. It has a package style of small outline, operates at temperatures from -55 to 150°C, and features a built-in diode for efficient switching performance.
FS50R12KE3
Infineon Technologies' FS50R12KE3 is a N-CHANNEL IGBT with 6 elements, VCEsat of 2.2V, and IC of 75A. Ideal for high-power applications like motor drives and renewable energy systems due to its max VCE of 1200V and power dissipation of 270W. Features built-in diode, thermistor, and fast turn-off time (toff) of 610ns for efficient performance.
IRG4PC50FDPBF
IRG4PC50FDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 200W. It has a single configuration with built-in diode, suitable for power control applications. With a nominal turn-off time of 660ns and max fall time of 210ns, it offers efficient switching performance in high-power systems.
FZ600R12KS4HOSA1
FZ600R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and a Nominal Turn Off Time of 590ns. It features a SINGLE configuration with BUILT-IN DIODE, suitable for high-power applications like industrial motor drives and renewable energy systems.
DF1000R17IE4BOSA1
DF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 1390A max collector current, and 1890ns turn off time. Ideal for power control applications due to its single configuration with built-in diode and thermistor, rectangular package shape, and flange mount style. Operating at a max temperature of 175°C, it offers efficient performance in high-power systems.
FD300R06KE3HOSA1
Infineon's FD300R06KE3HOSA1 is an N-CHANNEL IGBT with 600V max. collector-emitter voltage, 400A max. collector current, and 190ns nominal turn on time. Ideal for applications requiring high power switching such as motor drives, renewable energy systems, and industrial automation due to its single configuration with built-in diode and isolated case connection.
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FZ1800R12HP4B9HOSA2
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2700 A; JESD-30 Code: R-XUFM-X9; Transistor Element Material: SILICON;
FZ1800R12HP4B9HOSA1
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2700 A; No. of Elements: 3; Package Body Material: UNSPECIFIED;
FZ1800R17HP4B29BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 9; Nominal Turn Off Time (toff): 1860 ns;
FZ1800R12KL4CNOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2850 A; Terminal Form: UNSPECIFIED; Package Body Material: UNSPECIFIED;
FZ1800R17HE4B9NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Maximum Collector-Emitter Voltage: 1700 V;
FZ1800R12KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1800 A; Terminal Position: UPPER; Case Connection: ISOLATED;
FZ1800R17HP4B29BOSA2
N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 2.25 V;
FZ1800R12HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2735 A; Nominal Turn Off Time (toff): 1160 ns; JESD-30 Code: R-PUFM-X9;
FZ1800R16KF4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1800 A; Qualification: Not Qualified; Maximum VCEsat: 3.5 V;
FZ1800R16KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1800 A; Nominal Turn On Time (ton): 1000 ns; Peak Reflow Temperature (C): NOT SPECIFIED;
FZ1800R17HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Nominal Turn On Time (ton): 900 ns; Nominal Turn Off Time (toff): 1920 ns;
FZ1800R16KF4_S1
N-Channel; Maximum Power Dissipation (Abs): 11000 W; Maximum Collector Current (IC): 1800 A; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Collector-Emitter Voltage: 1600 V;
FZ1800R12KF4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 11000 W; Maximum Collector Current (IC): 1800 A; Terminal Form: UNSPECIFIED;
FZ1800R17HP4_B29
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 13000 W; Maximum Collector Current (IC): 1800 A; Terminal Form: UNSPECIFIED;
FZ1800R12HP4_B9
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10500 W; Maximum Collector Current (IC): 2700 A; Nominal Turn On Time (ton): 720 ns;
FZ1800R12KL4C
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 11400 W; Maximum Collector Current (IC): 2850 A; No. of Elements: 3;
FZ1800R12HE4_B9
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2735 A; Case Connection: ISOLATED; No. of Terminals: 9;
FZ1800R12HE4B9NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2735 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 720 ns;
FZ1800R12HP4B9NPSA1
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2700 A; Nominal Turn Off Time (toff): 1330 ns; Package Body Material: UNSPECIFIED;
FZ1800R17KF4
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1800 A; Terminal Form: UNSPECIFIED; Nominal Turn Off Time (toff): 1050 ns;
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