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FMG1G100US60L

Fairchild Semiconductor

FMG1G100US60L by Fairchild Semiconductor

FMG1G100US60L by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 2.8V VCE. Ideal for MOTOR CONTROL applications, it has a toff of 320ns and ton of 85ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and SILICON element.

Median Price

$39.972

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Rochester

USA . 31 parts In-Stock

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$35.530

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$31.790

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$29.920

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Verical

USA . 31 parts In-Stock

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$44.413

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$39.737

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$37.400

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Nova Conductors

Japan . 100 parts In-Stock

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$35.309

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Digiode

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Vyrian

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ACDS - Activité Composants Distribution Service

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Aztec Data Supply Inc.

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$0.512

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AZTECH Wire

Italy . 243 parts In-Stock

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$4.957

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Netroflash

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Corphita

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Overview

Upgrade your motor control systems with the FMG1G100US60L by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like this one, featuring a single configuration with a built-in diode for seamless integration. Designed for high-performance applications, this transistor offers a maximum collector-emitter voltage of 600V and a maximum collector current of 100A, ensuring reliable operation even under heavy loads. Trust Fairchild Semiconductor to provide you with cutting-edge technology that will elevate your motor control systems to new heights of efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides electrical insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drops and faster switching speeds compared to P-channel types, resulting in better performance for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current flow protection and simplifies circuit design, making the product more efficient and cost-effective.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and reliability in controlling the speed and direction of motors.

Maximum VCEsat: 2.8 V

Low VCEsat reduces power losses and improves efficiency in power switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and efficient use of space in electronic circuits.

Nominal Turn Off Time (toff): 320 ns

Fast turn-off time improves the efficiency of switching operations and reduces heat generation in the transistor.

Maximum Power Dissipation (Abs): 400 W

High power dissipation capability allows the transistor to handle high power loads without overheating or failing.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides easy and secure mounting of the transistor in electronic assemblies.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating allows the transistor to handle high voltage circuits, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon IGBTs offer high performance, reliability, and thermal stability, making them a preferred choice in power electronics.

Maximum Gate-Emitter Voltage: 20 V

Low gate-emitter voltage ensures reliable switching and control of the transistor, reducing the risk of damage or malfunction.

Maximum Collector Current (IC): 100 A

High collector current rating allows the transistor to handle high current loads and ensures reliable operation in demanding applications.

Terminal Position: UPPER

Upper terminal position makes it easier to connect the transistor in the circuit and reduces the risk of short circuits or connection errors.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and enhances safety in high voltage applications.

Nominal Turn On Time (ton): 85 ns

Fast turn-on time improves the performance and efficiency of the transistor in switching operations, reducing power losses and improving response times.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FMG1G100US60L attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X7

No. of Elements:

1

No. of Terminals:

7

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

320 ns

Nominal Turn On Time (ton):

85 ns

Maximum VCEsat:

2.8 V

Trade Compliance

FMG1G100US60L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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